JPS6223453B2 - - Google Patents

Info

Publication number
JPS6223453B2
JPS6223453B2 JP54029981A JP2998179A JPS6223453B2 JP S6223453 B2 JPS6223453 B2 JP S6223453B2 JP 54029981 A JP54029981 A JP 54029981A JP 2998179 A JP2998179 A JP 2998179A JP S6223453 B2 JPS6223453 B2 JP S6223453B2
Authority
JP
Japan
Prior art keywords
insulating film
substrate
sio
gaas
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54029981A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55123133A (en
Inventor
Koichiro Ootori
Yoshio Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP2998179A priority Critical patent/JPS55123133A/ja
Publication of JPS55123133A publication Critical patent/JPS55123133A/ja
Publication of JPS6223453B2 publication Critical patent/JPS6223453B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
JP2998179A 1979-03-16 1979-03-16 Manufacture of semiconductor device Granted JPS55123133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2998179A JPS55123133A (en) 1979-03-16 1979-03-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2998179A JPS55123133A (en) 1979-03-16 1979-03-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55123133A JPS55123133A (en) 1980-09-22
JPS6223453B2 true JPS6223453B2 (enrdf_load_stackoverflow) 1987-05-22

Family

ID=12291129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2998179A Granted JPS55123133A (en) 1979-03-16 1979-03-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55123133A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898933A (ja) * 1981-12-09 1983-06-13 Seiko Epson Corp 半導体装置の製造方法
JPS60211844A (ja) * 1984-04-05 1985-10-24 Fuji Electric Corp Res & Dev Ltd 絶縁膜の形成方法
JPS60211843A (ja) * 1984-04-05 1985-10-24 Fuji Electric Corp Res & Dev Ltd 絶縁膜パタ−ンの形成方法
JP4782069B2 (ja) * 2007-05-09 2011-09-28 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP4782070B2 (ja) * 2007-05-09 2011-09-28 ルネサスエレクトロニクス株式会社 半導体集積回路装置及びその製造方法
JP2011228718A (ja) * 2011-05-23 2011-11-10 Renesas Electronics Corp 半導体集積回路装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE788682A (fr) * 1971-09-13 1973-03-12 Westinghouse Electric Corp Systeme de fixation et de liberation de couvercle superieur de cuve de reacteur
JPS5352058A (en) * 1976-10-22 1978-05-12 Hitachi Ltd Formation of p-type layer

Also Published As

Publication number Publication date
JPS55123133A (en) 1980-09-22

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