JPS62230088A - Manufacture of enamelled wiring board - Google Patents
Manufacture of enamelled wiring boardInfo
- Publication number
- JPS62230088A JPS62230088A JP7384086A JP7384086A JPS62230088A JP S62230088 A JPS62230088 A JP S62230088A JP 7384086 A JP7384086 A JP 7384086A JP 7384086 A JP7384086 A JP 7384086A JP S62230088 A JPS62230088 A JP S62230088A
- Authority
- JP
- Japan
- Prior art keywords
- enamel
- wiring board
- electroless plating
- roughening
- crystallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 210000003298 dental enamel Anatomy 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 238000007788 roughening Methods 0.000 claims description 12
- 238000007772 electroless plating Methods 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 claims 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 4
- 238000010304 firing Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000011775 sodium fluoride Substances 0.000 description 2
- 235000013024 sodium fluoride Nutrition 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- -1 ammonium tetrafluoroborate Chemical compound 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、ほうろう配線板の製造法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing an enameled wiring board.
(従来の技術)
従来、ほうろう基板への回路形成は金属ペーストをスク
リーン印刷した後500℃以上の温度で焼き付ける厚膜
法を用いていた。(Prior Art) Conventionally, circuit formation on enamel substrates has been carried out using a thick film method in which a metal paste is screen printed and then baked at a temperature of 500° C. or higher.
しかし、厚膜法では(i)スルーホール内印3+1が困
難であること、(ii)ファインパターンが困難である
こと、(iii )高温での焼成を繰り返す(スルーホ
ール付両面板の場合3回)ため基板にそりやクランク等
の発生するおそれがあること、(iv )空気中焼成す
るためには貴金属ペーストを使うためコスト高になるこ
と、(v)11ペースト等を焼成する場合は窒素雰囲気
の管理が困難な上900°Cを越える高温で焼成するた
めほうろう層の耐熱温度を上回るか、または金属芯の変
態点を越える(鉄のα−γ変態点:910℃)ため歪が
発生しやすいことなどの問題点があった。However, with the thick film method, (i) it is difficult to create a 3+1 mark inside the through hole, (ii) it is difficult to create a fine pattern, and (iii) firing is repeated at high temperatures (three times in the case of double-sided boards with through holes). ), there is a risk of warping or cranking on the board; (iv) noble metal paste is used for firing in air, which increases the cost; and (v) 11. When firing paste, etc., a nitrogen atmosphere is required. In addition, it is difficult to control the temperature, and since it is fired at a high temperature exceeding 900°C, it exceeds the heat resistance temperature of the enamel layer or the transformation point of the metal core (α-γ transformation point of iron: 910°C), which causes distortion. There were some problems, such as it being easy to use.
このような問題点に対して、ほうろう基板表面にめっき
を行なうカーtL提案されている。例えば、特開昭53
−5438号公報、特開昭60−195078号公報に
示される方法であるが、ほうろう基板表面の粗化を、前
者はフッ酸、後者は水酸化ナトリウム融解液の処理で行
っている。In order to solve these problems, CartL has been proposed, in which the surface of the enamel substrate is plated. For example, JP-A-53
The methods disclosed in Japanese Patent Laid-open No. 5438 and Japanese Patent Application Laid-Open No. 60-195078 roughen the surface of the enamel substrate by treatment with hydrofluoric acid in the former and with a sodium hydroxide melt in the latter.
(発明が解決しようとする問題点)
フッ酸や水酸化ナトリウム融解液を用いると腐食力が強
すぎるためほうろう基板表面の結晶質相、非結晶質相の
区別なく溶解され粗化面の凹凸の制御が困難な上に、表
面付近に脆弱層を形成するため、その後に施す無電解め
っき膜がこの脆弱層と共に剥離し安定的な密着力を得る
ことが困難であった。また、フン酸や水酸化ナトリウム
融解液は取扱いが危険である。(Problem to be solved by the invention) When hydrofluoric acid or sodium hydroxide melt is used, the corrosive power is too strong, so the crystalline phase and amorphous phase on the surface of the enamel substrate are dissolved without distinction, and the unevenness of the roughened surface is In addition to being difficult to control, since a brittle layer is formed near the surface, the electroless plating film applied afterwards peels off along with this brittle layer, making it difficult to obtain stable adhesion. Furthermore, handling of hydronic acid and sodium hydroxide melt is dangerous.
本発明は、無電解めっき膜の密着力に優れるほうるう配
線板の製造法を提供するものである。The present invention provides a method for manufacturing an enameled wiring board with excellent adhesion of an electroless plated film.
(問題点を解決するための手段)
本発明は、金属芯を結晶質相と非晶質相とから成る結晶
化軸ほうろう層によって被覆したほうろう基板を用い、
結晶質相に比べ非晶質相の溶解速度の大きい粗化液で表
面を粗化しめっき膜との密着性を促進させ、次にこの粗
化形状を破壊しないように無電解めっき反応を開始させ
ることのできる触媒を付与した後無電解めっきを行なう
ことでほうろう基板上に密着性のよいめっき膜を形成す
る。この後、回路部以外にめっきレジストを形成し電気
めっきを行なうことで短時間に回路の膜厚を増大させ、
最後にめっきレジストを除去し、エツチングを行なうこ
とで回路を形成する。(Means for Solving the Problems) The present invention uses an enamel substrate in which a metal core is covered with a crystallized axial enamel layer consisting of a crystalline phase and an amorphous phase,
Roughen the surface with a roughening solution that dissolves the amorphous phase at a higher rate than the crystalline phase to promote adhesion to the plating film, and then start the electroless plating reaction without destroying this roughened shape. By applying a suitable catalyst and performing electroless plating, a plated film with good adhesion is formed on the enamel substrate. After this, a plating resist is formed on areas other than the circuit area and electroplating is performed to increase the film thickness of the circuit in a short time.
Finally, the plating resist is removed and etching is performed to form a circuit.
本発明で用いる粗化液は中性もしくは中性に近い水溶液
で、結晶化ガラスの組成の異なる相に対して溶解性が異
なるものである。The roughening liquid used in the present invention is a neutral or nearly neutral aqueous solution, and has different solubility in phases of different compositions of crystallized glass.
一般に、酸化物の耐水、耐酸、耐アルカリ性は以下のよ
うになっている〔成瀬省著「ガラス光学」 (昭33)
共立出版〕。In general, the water resistance, acid resistance, and alkali resistance of oxides are as follows [Glass Optics by Sei Naruse (1968)
Kyoritsu Publishing].
耐水性: ZrO2> A120a> Ti01 >
ZnO>MgO> PbO> CaO> BaO
耐酸性: ZrO2> A1.03> ZnO> Ca
O>Tie、> PbO> MgO> BaO耐
Na0II性: Zr0z ) AIzOi、Ti0g
、ZnO,CaO耐NazCO3性: ZaOt )
AIzOs、Ti0t、ZnO> CaO+Bad、I
’bO,MgO
結晶化ガラス中の結晶質成分としてBaO,CaO。Water resistance: ZrO2>A120a>Ti01>
ZnO>MgO>PbO>CaO>BaO
Acid resistance: ZrO2>A1.03>ZnO>Ca
O>Tie,>PbO>MgO>BaO Na0II resistance: Zr0z) AIzOi, Ti0g
, ZnO, CaO NazCO3 resistance: ZaOt )
AIzOs, Ti0t, ZnO> CaO+Bad, I
'bO, MgO BaO, CaO as crystalline components in crystallized glass.
MgO,PbO等を用いた場合、結晶質相、は強酸、強
アルカリの両方に溶解されやすい。中性または中性に近
い水溶液で非晶質相を強く溶解し、結晶質相を残すよう
な処理をすることで、その後に施すめっき膜との密着を
大きくするような粗化面を形成することが出来る。When MgO, PbO, etc. are used, the crystalline phase is easily dissolved in both strong acids and strong alkalis. By strongly dissolving the amorphous phase with a neutral or near-neutral aqueous solution and performing a treatment that leaves the crystalline phase, a roughened surface is formed that increases adhesion with the plating film that will be applied afterwards. I can do it.
結晶化ガラスは結晶質相と非晶質相とより成っているが
、結晶質相が数種の相(組成)より成っている場合があ
り、本発明では結晶質相の少なくとも一つの相に比べ非
晶質相の溶解速度の大きい粗化液で粗化をする。その結
果、粗化面には結晶質相の少なくとも一つの相が残り、
その後に施すめっき膜との密着力を大きくするように粗
化面を形成することが出来る。Crystallized glass consists of a crystalline phase and an amorphous phase, but the crystalline phase may consist of several types of phases (compositions), and in the present invention, at least one of the crystalline phases Roughening is performed with a roughening solution that has a higher rate of dissolving the amorphous phase. As a result, at least one crystalline phase remains on the roughened surface,
A roughened surface can be formed so as to increase adhesion to a plating film applied thereafter.
本発明では、例えば、ホウ素、ケイ素、マグネシウム、
バリウムを15 < Bz(h < 35.10<Si
O□〈30.40<Mg+CaO+BaO<55の割合
(モル%)で含む結晶化軸が使用出来る。In the present invention, for example, boron, silicon, magnesium,
Barium 15 < Bz (h < 35.10 < Si
A crystallization axis containing the ratio (mol %) of O□<30.40<Mg+CaO+BaO<55 can be used.
このほうろう層はBaOを多く含む結晶質相と、ホウケ
イ酸ガラス質相から成る。結晶質相は長さ20μm以下
の針状で非晶質マトリック中に無数に分散している。This enamel layer consists of a BaO-rich crystalline phase and a borosilicate glassy phase. The crystalline phase has a needle shape of 20 μm or less in length and is dispersed in countless numbers in the amorphous matrix.
粗化は、例えば、フン化ナトリウム、フッ化カリウム、
フッ化アンモニウム、フン化ホウ素酸、テトラフルオロ
ホウ酸アンモニウム等のフッ化物塩水溶液、無電解ニッ
ケルめっき液[ブルーシューマーJ (pH6,4)(
日本カニゼン製商品名)等により行うことが出来る。粗
化液のpHは2〜I3、好ましくは5〜IO1更に好ま
しくは6〜9である。For roughening, for example, sodium fluoride, potassium fluoride,
Fluoride salt aqueous solution such as ammonium fluoride, fluoroboric acid, ammonium tetrafluoroborate, electroless nickel plating solution [Blue Schumer J (pH 6,4) (
This can be done using Nippon Kanizen Co., Ltd. (trade name), etc. The pH of the roughening liquid is 2 to 13, preferably 5 to IO1, and more preferably 6 to 9.
無電解めっき反応を開始させることの出来る触媒として
は、絶縁基板面に無電解めっきにより回路形成を行う訂
処理として使用される通常の触媒、特にアルカリ性、中
性のpb系等の触媒が好ましい。The catalyst capable of starting the electroless plating reaction is preferably a common catalyst used in a correction process for forming a circuit on an insulating substrate surface by electroless plating, particularly an alkaline or neutral PB-based catalyst.
めっきレジストは印刷法または現像法等で形成される。The plating resist is formed by a printing method, a developing method, or the like.
無電解めっき、電気めっきは印刷配線の製造で、絶8!
基板面に回路形成を行うための通常の無電解、電気めっ
き液により行うことが出来る。Electroless plating and electroplating are absolutely 8 in the manufacturing of printed wiring!
This can be done using a conventional electroless or electroplating solution for forming circuits on the substrate surface.
実施例 第1図により説明する。Example This will be explained with reference to FIG.
BzO3□20.5iOz=15. MgO□55’、
Ba0=5.5rO=5の組成(モル%)の結晶化軸
ほうろう層lによって被覆したほうろう基板を用いた。BzO3□20.5iOz=15. MgO□55',
An enamel substrate coated with a crystallized axial enamel layer l having a composition (mol %) of Ba0=5.5rO=5 was used.
2は金属芯である(第1図(a))。粗化液としはフッ
化ナトリウム20 g/ll水溶液(pH7,8)を使
用した。スルーホール付ほうろう基板を80℃の上記粗
化液に50分間浸漬させた後Na0IIを1 g/l!
含むpbシーディンダ液(pit 10.2 )に2分
間浸漬し、次に同しくアルカリ性の還元処理1f(p)
[11,2)に1分間浸漬した(第1図(b))後、ホ
ルマリンを還元剤とする無電解銅めっき(pH12,3
)で基板全面に銅めっき被膜4を形成した(第1図(C
))。この基板に回路部以外にめっきレジストを形成し
く第1図(d ) ) 、電気めっきを行なうことで回
路の119厚を増大させ(第1図(e ) ) 、最後
にめっきレジストしを除去しく第1図(r))、アンモ
ニアを主剤とし、酸化剤としてNaCl0.、pTI5
衝剤としてNIIallCOsなどの入ったエツチング
液(p H8,2)でエツチングによる回路部以外のめ
っき被膜除去により回路を形成した(第1図(g))。2 is a metal core (FIG. 1(a)). A 20 g/ll aqueous solution of sodium fluoride (pH 7, 8) was used as the roughening liquid. After immersing the enamel substrate with through holes in the roughening solution at 80°C for 50 minutes, 1 g/l of Na0II was added!
It was immersed for 2 minutes in the pb seedinda solution (pit 10.2) containing the same alkaline reduction treatment 1f(p).
[11,2) for 1 minute (Fig. 1(b)), and then electroless copper plating using formalin as a reducing agent (pH 12,3).
) was used to form a copper plating film 4 on the entire surface of the substrate (see Figure 1 (C)).
)). A plating resist is formed on this board other than the circuit area (Fig. 1(d)), the thickness of the circuit is increased by electroplating (Fig. 1(e)), and finally the plating resist is removed. Fig. 1(r)), ammonia is the main ingredient and NaCl0. , pTI5
A circuit was formed by removing the plating film other than the circuit portion by etching with an etching solution (pH 8.2) containing NIIallCOs or the like as a buffer agent (FIG. 1(g)).
このようにして得られた回路の基板に対する密着力はl
k+r/−以上あった。The adhesion strength of the circuit thus obtained to the substrate is l
There were more than k+r/-.
一方、粗化の前後にXMA (X線マイクロアナライザ
)分析による基板表面の元素分析を行ったところ、粗化
後に結晶質相を形成しているIIaの存在比が著しく増
大していた。又SEM(走査型電子顕微鏡)による表面
観察でも粗化面は0.5〜2μmの球状物の積み重なり
であった。On the other hand, elemental analysis of the substrate surface by XMA (X-ray microanalyzer) analysis before and after roughening revealed that the abundance ratio of IIa, which forms a crystalline phase, increased significantly after roughening. Furthermore, surface observation using a SEM (scanning electron microscope) revealed that the roughened surface was a pile of spherical particles of 0.5 to 2 μm in size.
(発明の効果)
これまで(i)スルーホール部付近にほうろう基板独特
のほうろう層の盛り上がりを生じること、(11)ほう
ろう基板のスルーホール徨はlf1以上のものが多いこ
となどの理由によりスルーホール内へのインクの十分な
吸引が出来ずスルーホール印刷の自由化が困難であった
。これに対して本発明の方法に於いては、基板と両面と
同時にスルーホール内部まで回路が形成できる。また、
ホトレジストを採用することにより、厚膜法では困難な
微細加工ができるためファインパターン化が可能である
。さらに、高価な貴金属厚膜ペーストを用いないため回
路形成のコストを格段に下げることが可能となる。(Effects of the Invention) Until now, through-holes have been made due to the following reasons: (i) the swell of the enamel layer peculiar to enamel substrates occurs near the through-hole portions, and (11) the through-hole size of enamel substrates is often larger than lf1. The ink could not be sucked in sufficiently, making it difficult to use through-hole printing freely. In contrast, in the method of the present invention, circuits can be formed simultaneously on both sides of the substrate and inside the through holes. Also,
By using photoresist, fine patterning is possible because microfabrication, which is difficult with thick film methods, is possible. Furthermore, since no expensive noble metal thick film paste is used, the cost of circuit formation can be significantly reduced.
さらに、本製造法では、回路部分以外にはめっきをつけ
ないので、エツチング法に比べ材料や工程の節約ができ
る上スルーホール上へ、レジストを張る必要がないので
、フィルムタイプのレジストの他にスクリーン印刷によ
るレジスト形成も可能となり、一層のコスト低減が可能
となる。Furthermore, since this manufacturing method does not apply plating to anything other than the circuit area, it saves materials and processes compared to the etching method, and there is no need to apply resist over the through-holes, so it can be used in addition to film-type resists. It also becomes possible to form a resist by screen printing, making it possible to further reduce costs.
また、電気めっきを用いて回路の膜厚を増大させるため
回路形成が短時間で済む。Further, since the film thickness of the circuit is increased using electroplating, the circuit can be formed in a short time.
第1図は本発明の詳細な説明するための断面図である。 1、結晶化軸ほうろう層 2、金属芯 3、無電解めっき膜 4、めっきレジスト 5、電気めっき膜 FIG. 1 is a sectional view for explaining the present invention in detail. 1. Crystallized axial enamel layer 2. Metal core 3. Electroless plating film 4. Plating resist 5. Electroplated film
Claims (1)
ほうろう層によって被覆したほうろう基板を用いて、 (a)結晶質相に比べ非晶質相の溶解速度の大きい粗化
液で粗化する工程、 (b)無電解めっき反応を開始させることのできる触媒
を付与する工程、 (c)無電解めっきを行なう工程、 (d)無電解めっき被膜上にめっきレジストを形成する
工程、 (e)電気めっきを行なう工程、 (f)めっきレジストを除去する工程、 (g)エッチングを行なう工程、 とを含むことを特徴とするほうろう配線板の製造法。 2、結晶化釉ほうろう層が、ホウ素、ケイ素、マグネシ
ウム、バリウムを15<B_2O_3<35、10<S
iO_2<30、40<MgO+CaO+BaO<65
の割合(モル%)で含む結晶化ガラスである特許請求の
範囲第1項又は第2項記載のほうろう配線板の製造法。[Claims] 1. Using an enamel substrate in which a metal core is covered with a crystallized glaze enamel layer consisting of a crystalline phase and an amorphous phase, (a) the amorphous phase is smaller than the crystalline phase; A step of roughening with a roughening solution having a high dissolution rate, (b) a step of applying a catalyst capable of starting an electroless plating reaction, (c) a step of performing electroless plating, (d) on an electroless plating film. A method for producing an enamel wiring board, comprising the following steps: (e) electroplating; (f) removing the plating resist; and (g) etching. 2. The crystallized enamel layer contains boron, silicon, magnesium, and barium at 15<B_2O_3<35, 10<S
iO_2<30, 40<MgO+CaO+BaO<65
3. The method for manufacturing an enameled wiring board according to claim 1 or 2, wherein the enamel wiring board is crystallized glass containing a proportion (mol %) of
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7384086A JPS62230088A (en) | 1986-03-31 | 1986-03-31 | Manufacture of enamelled wiring board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7384086A JPS62230088A (en) | 1986-03-31 | 1986-03-31 | Manufacture of enamelled wiring board |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62230088A true JPS62230088A (en) | 1987-10-08 |
Family
ID=13529738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7384086A Pending JPS62230088A (en) | 1986-03-31 | 1986-03-31 | Manufacture of enamelled wiring board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62230088A (en) |
-
1986
- 1986-03-31 JP JP7384086A patent/JPS62230088A/en active Pending
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