JPS62230086A - Manufacture of enamelled wiring board - Google Patents

Manufacture of enamelled wiring board

Info

Publication number
JPS62230086A
JPS62230086A JP7383886A JP7383886A JPS62230086A JP S62230086 A JPS62230086 A JP S62230086A JP 7383886 A JP7383886 A JP 7383886A JP 7383886 A JP7383886 A JP 7383886A JP S62230086 A JPS62230086 A JP S62230086A
Authority
JP
Japan
Prior art keywords
wiring board
enamel
roughening
crystalline phase
enameled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7383886A
Other languages
Japanese (ja)
Inventor
肇 中山
津山 宏一
岡村 寿郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP7383886A priority Critical patent/JPS62230086A/en
Publication of JPS62230086A publication Critical patent/JPS62230086A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、はうろう配線板の製造法に関するものである
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a crawling wiring board.

(従来の技術) 従来、はうろう基板への回路形成は金属ペーストをスク
リーン印刷した21500℃以上の温度で焼き付ける厚
膜法を用いていた。
(Prior Art) Conventionally, circuits have been formed on a floating substrate using a thick film method in which a metal paste is screen printed and baked at a temperature of 21,500° C. or higher.

しかし、厚膜法ではい)スルーホール内印刷が困難であ
ること、(11)ファインパターンが困難であること、
(iii )高温での焼成を繰り返す(スルーホール付
両面板の場合3回)ため基板にそりやクランク等の発生
するおそれがあること、(1v)空気中焼成するために
は貴金属ペーストを使うためコスト高になること、(V
)銀ペースト等を焼成する場合は窒素雰囲気の管理が困
難な上900℃を越える高温で焼成するためほうろう層
の耐熱温度を上回るか、または金属芯の変態点を越える
(鉄のα−γ変態点:910℃)ため歪が発生しやすい
ことなどの問題点があった。
However, with the thick film method, (11) printing inside through-holes is difficult; (11) fine patterns are difficult;
(iii) Repeated firing at high temperatures (three times in the case of double-sided boards with through holes) may cause warping or cranking on the board; (1v) Precious metal paste is used for firing in air; Higher costs (V
) When firing silver paste, etc., it is difficult to control the nitrogen atmosphere and firing at a high temperature exceeding 900°C exceeds the heat resistance temperature of the enamel layer or the transformation point of the metal core (α-γ transformation of iron). point: 910° C.), so there were problems such as distortion easily occurring.

このような問題点に対して、はうろう基板表面にめっき
を行なう方法堤案されている0例えば、特開昭53−5
438号公報、特開昭60−195078号公報に示さ
れる方法であるが、はうろう基板表面の粗化を、前者は
フッ酸、後者は水酸化ナトリウム融解液の処理で行って
いる。
In order to solve these problems, a method of plating the surface of a floating substrate has been proposed.
438 and Japanese Patent Application Laid-Open No. 60-195078, the surface of the floating substrate is roughened by treatment with hydrofluoric acid in the former and with a sodium hydroxide melt in the latter.

(発明が解決しようとする問題点) フッ酸や水酸化ナトリウム融解液を用いると腐食力が強
すぎるためほうろう基板表面の結晶質相、非結晶質相の
区別なく溶解され粗化面の凹凸の制御が困難な上に、表
面付近にllf1g層を形成するため、その後に施す無
′1lit解めっき膜がこの脆弱層と共に剥離し安定的
な密着力を得ることが困難であった。また、フッ酸や水
酸化ナトリウム融解液は取扱いが危険である。
(Problem to be solved by the invention) When hydrofluoric acid or sodium hydroxide melt is used, the corrosive power is too strong, so the crystalline phase and amorphous phase on the surface of the enamel substrate are dissolved without distinction, and the unevenness of the roughened surface is In addition to being difficult to control, since the llf1g layer is formed near the surface, the non-1lit deplating film applied afterwards peels off together with this brittle layer, making it difficult to obtain stable adhesion. Furthermore, handling of hydrofluoric acid and molten sodium hydroxide is dangerous.

本発明は、無電解めっき膜の密着力に優れるほうるう配
線板の製造法を提供するものである。
The present invention provides a method for manufacturing an enameled wiring board with excellent adhesion of an electroless plated film.

(問題点を解決するための手段) 本発明は、金属芯を結晶質相と非晶質相とから成る結晶
化釉ほうろう層によって被覆したほうろう基板を用い、
結晶質相に比べ非晶質相の熔解速度の大きい粗化液で表
面を粗化しめっき膜との密着性を促進させ、次にこの粗
化形状を破壊しないように無電解めっき反応を開始させ
ることのできる触媒を付与した後に無電解めっきを行な
うことでほうろう基板上に密着性のよいめっき膜を形成
する。更にエツチングレジストを形成した後、エツチン
グを行い回路を形成する。
(Means for Solving the Problems) The present invention uses an enamel substrate in which a metal core is covered with a crystallized glazed enamel layer consisting of a crystalline phase and an amorphous phase.
Roughen the surface with a roughening liquid that melts the amorphous phase faster than the crystalline phase to promote adhesion to the plating film, and then start the electroless plating reaction without destroying this roughened shape. By applying a suitable catalyst and performing electroless plating, a plated film with good adhesion is formed on the enamel substrate. Further, after forming an etching resist, etching is performed to form a circuit.

本発明で用いる粗化液は中性もしくは中性に近い水溶液
で、結晶化ガラスの組成の異なる相に対して溶解性が異
なるものである。
The roughening liquid used in the present invention is a neutral or nearly neutral aqueous solution, and has different solubility in phases of different compositions of crystallized glass.

一般に、酸化物の耐水、耐酸、耐アルカリ性は以下のよ
うになっている〔成瀬省著「ガラス光学」 (昭33)
共立出版〕。
In general, the water resistance, acid resistance, and alkali resistance of oxides are as follows [Glass Optics by Sei Naruse (1968)
Kyoritsu Publishing].

耐水性: Zr0t > AllOs> Tie、 >
 ZnO>MgO> PbO> CaO> BaO耐酸
性: Zr0z > AI、Os> ZnO> CaO
>TiO2>  PbO>  MgO>  BaO耐N
aOH性: Zr0z ) AIzOz+Ti0t、Z
nO,CaO耐NazC(1+性: Za□z ) A
Ito!lTi0g、ZnO> CaO+Bad、Pb
O,MgO 結晶化ガラス中の結晶質成分としてRag、Cab。
Water resistance: Zr0t > AllOs > Tie, >
ZnO>MgO>PbO>CaO>BaO Acid resistance: Zr0z>AI,Os>ZnO>CaO
>TiO2>PbO>MgO> BaO N resistance
aOH property: Zr0z) AIzOz+Ti0t, Z
nO, CaO resistance NazC (1+ property: Za□z) A
Ito! lTi0g, ZnO> CaO+Bad, Pb
O, MgO Rag, Cab as crystalline components in crystallized glass.

MgO,PbO等を用いた場合、結晶質相は強酸、強ア
ルカリの両方に溶解されやすい。中性または中性に近い
水溶液で非晶質相を強く溶解し、結晶質相を残すような
処理をすることで、その後に施すめっき膜との密着を大
きくするような粗化面を形成することが出来る。
When MgO, PbO, etc. are used, the crystalline phase is easily dissolved in both strong acids and strong alkalis. By strongly dissolving the amorphous phase with a neutral or near-neutral aqueous solution and performing a treatment that leaves the crystalline phase, a roughened surface is formed that increases adhesion with the plating film that will be applied afterwards. I can do it.

結晶化ガラスは結晶質相と非晶質相とより成っているが
、結晶質相が数種の相(組成)より成っている場合があ
り、本発明では結晶質権の少なくとも一つの相に比べ非
晶質相の溶解速度の大きい粗化液で粗化をする。その結
果、粗化面には結晶質権の少なくとも一つの相が残り、
その後に施すめっき膜との密着力を大きくするように粗
化面を形成することが出来る。
Crystallized glass consists of a crystalline phase and an amorphous phase, but the crystalline phase may consist of several types of phases (compositions), and in the present invention, at least one phase of the crystalline phase is Roughening is performed with a roughening solution that has a higher rate of dissolving the amorphous phase. As a result, at least one crystalline phase remains on the roughened surface,
A roughened surface can be formed so as to increase adhesion to a plating film applied thereafter.

本発明では、例えば、ホウ素、ケイ素、マグネシウム、
バリウムを15 < Rhoz < 35.10<5t
(h<30.40 < Mg + CaO+ BaO<
 65の割合(モル%)で含む結晶化軸が使用出来る。
In the present invention, for example, boron, silicon, magnesium,
Barium 15 < Rhoz < 35.10 < 5t
(h<30.40<Mg+CaO+BaO<
A crystallization axis containing a proportion (mol %) of 65% can be used.

このほうろう層はBaOを多(含む結晶質相と、ホウケ
イ酸ガラス質相から成る。結晶質相は長さ20μm以下
の針状で非晶質マトリック中に無数に分散している。
This enamel layer consists of a crystalline phase containing a large amount of BaO and a borosilicate glassy phase. The crystalline phase has a needle shape of 20 μm or less in length and is dispersed in countless numbers in the amorphous matrix.

粗化は、例えば、フン化ナトリウム、フン化カリウム、
フッ化アンモニウム、フン化ホウ素酸、テトラフルオロ
ホウ酸アンモニウム等のフッ化物塩水溶液、無電解ニッ
ケルめっき液「ブルーシューマーJ (pH6,4)(
日本カニゼン製商品名)等により行うことが出来る。粗
化液のp旧よ2〜13、好ましくは5〜10、更に好ま
しくは6〜9である。
For roughening, for example, sodium fluoride, potassium fluoride,
Fluoride salt aqueous solution such as ammonium fluoride, fluoroboric acid, ammonium tetrafluoroborate, electroless nickel plating solution "Blue Schumer J (pH 6,4) (
This can be done using Nippon Kanizen Co., Ltd. (trade name), etc. The p of the roughening liquid is 2 to 13, preferably 5 to 10, more preferably 6 to 9.

無電解めっき反応を開始させることの出来る触媒として
は、絶縁基板面に無電解めっきにより回路形成を行う前
処理として使用される通常の触媒、特にアルカリ性、中
性のpb系等の触媒が好ましい。
As a catalyst capable of starting an electroless plating reaction, a usual catalyst used as a pretreatment for forming a circuit on an insulating substrate surface by electroless plating, particularly an alkaline or neutral PB-based catalyst is preferable.

無電解めっきも印刷配線の製造で、絶縁基板面に回路形
成を行うための通常の無電解めっき液により行うことが
出来る。
Electroless plating can also be performed in the production of printed wiring using a normal electroless plating solution for forming circuits on the surface of an insulating substrate.

エツチングレジストは印刷法または現像法等で形成され
るが、エツチング液はほうろう層を浸食しない液とする
The etching resist is formed by a printing method, a developing method, etc., and the etching liquid is a liquid that does not corrode the enamel layer.

本発明では、はうろう層を脆弱化せずに粗化、活性化、
めっき、エツチングを行うことが重要である。
In the present invention, the crawling layer can be roughened, activated, and
It is important to perform plating and etching.

はうろう層は強酸、強アルカリに接触させると脆弱化す
る傾向があり、粗化、活性化、めっきのどの工程で強酸
、強アルカリを使用してもめっき被膜の密着力は得られ
ない、またエツチング液のみが強酸、強アルカリであっ
た場合でもエツチングレジスト下のめっき被膜とほうろ
う層の界面で側部からエツチング液による浸食をうける
。これらは、全ての処理液のpHを2〜13とすること
で解決する。
The wax layer tends to become brittle when it comes into contact with strong acids or strong alkalis, and the adhesion of the plating film cannot be obtained even if strong acids or strong alkalis are used in any of the roughening, activation, or plating steps. Furthermore, even if only the etching solution is a strong acid or strong alkali, the interface between the plating film under the etching resist and the enamel layer will be eroded from the sides by the etching solution. These problems can be solved by adjusting the pH of all treatment liquids to 2 to 13.

実施例 第1図により説明する。Example This will be explained with reference to FIG.

BzOt□20.5iOz=15. Mg0=55. 
Ba0=5.5rO=5の組成(モル%)の結晶比軸は
うろう層1によって被覆したほうろう基板を用いた。2
は金属芯である(第1図(a))。粗化液としはフッ化
ナトリウ1−20 g / 1水溶液(pH7,8>を
使用した。スルーホール付はうろう基板を80℃の上記
粗化液に50分間浸漬させた後NaOHをIg/j!含
むpbシーディング液(pH10,2)に2分間浸漬し
、次に同じくアルカリ性の還元処理液(pH11,2)
に1分間浸漬した(第1図(b))後、ホルマリンを還
元剤とする無電解銅めっき(pH12,3)を行った(
第1図(C))。このようにしてほうろう層全面にめっ
き被膜を形成した後、回路となる部分にエツチングレジ
スト4を形成しく第1図((1) ’) 、アンモニア
を主剤とし、酸化剤としてNaClO2、pH緩衝剤と
してNlI411CO+などの入ったエツチング液(p
H8,2)でエツチング(第1図(e))の後エツチン
グレジスト4を除去した(第1図(f))。
BzOt□20.5iOz=15. Mg0=55.
For the crystal ratio axis of the composition (mol %) of Ba0=5.5rO=5, an enamel substrate coated with the enamel layer 1 was used. 2
is a metal core (Fig. 1(a)). As the roughening solution, an aqueous solution of 1-20 g of sodium fluoride (pH 7, 8) was used. After the substrate with through holes was immersed in the roughening solution at 80°C for 50 minutes, NaOH was added to Ig/1. Immerse for 2 minutes in the pb seeding solution (pH 10, 2) containing j!, and then soak in the same alkaline reduction treatment solution (pH 11, 2).
After being immersed in water for 1 minute (Fig. 1(b)), electroless copper plating (pH 12.3) was performed using formalin as a reducing agent (
Figure 1 (C)). After forming a plating film on the entire surface of the enamel layer in this way, an etching resist 4 is formed on the part that will become the circuit. Etching solution containing NlI411CO+ etc.
After etching (FIG. 1(e)) in H8, 2), the etching resist 4 was removed (FIG. 1(f)).

このようにして得られた回路の基板に対する密着力は1
にぎ/−以上あった。
The adhesion strength of the circuit thus obtained to the substrate is 1
There were more than 2/-.

一方、粗化の前後にXMA (X線マイクロアナライザ
)分析による基板表面の元素分析を行ったところ、粗化
後に結晶質相を形成しているBaの存在比が著しく増大
していた。又SEM(走査型電子顕微鏡)による表面観
察でも粗化面は0.5〜2μmの球状物の積み重なりで
あった。
On the other hand, elemental analysis of the substrate surface by XMA (X-ray microanalyzer) analysis before and after roughening revealed that the abundance ratio of Ba, which forms a crystalline phase, increased significantly after roughening. Furthermore, surface observation using a SEM (scanning electron microscope) revealed that the roughened surface was a pile of spherical particles of 0.5 to 2 μm in size.

(発明の効果) これまで(i)スルーホール部付近にほうろう基板独特
のほうろう層の盛り上がりを生じること、(11)はう
ろう基板のスルーホール(東は1鶴以上のものが多いこ
となどの理由によりスルーホール内へのインクの十分な
吸引が出来ずスルーホール印刷の自由化が困難であった
。これに対して本発明の方法に於いては、基板と両面と
同時にスルーホール内部まで回路が形成できる。また、
ホトレジストを採用することにより、厚膜法では困難な
微細加工ができるためファインパターン化が可能である
。さらに、高価な貴金属厚膜ペーストを用いないため回
路形成のコストを格段に下げることが可能となる。
(Effects of the invention) Until now, (i) the enamel layer unique to enamel substrates has a swell near the through-hole portion, and (11) the through-holes of porcelain substrates (in the East, there are many holes larger than one crane), etc. For these reasons, ink could not be sufficiently sucked into the through-holes, making it difficult to print through-holes freely.On the other hand, the method of the present invention allows the circuit to be printed simultaneously on both sides of the board and inside the through-holes. can be formed.Also,
By using photoresist, fine patterning is possible because microfabrication, which is difficult with thick film methods, is possible. Furthermore, since no expensive noble metal thick film paste is used, the cost of circuit formation can be significantly reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の詳細な説明するための断面図である。 1、結晶化はうろう層 2、金属芯 3、無電解めっき膜 4、エソチングレジスト FIG. 1 is a sectional view for explaining the present invention in detail. 1. Crystallization is a thin layer 2. Metal core 3. Electroless plating film 4. Esoching resist

Claims (1)

【特許請求の範囲】 1、金属芯を、結晶質相と非晶質相とから成る結晶化釉
ほうろう層によって被覆したほうろう基板を用いて、 (a)結晶質相に比べ非晶質相の溶解速度の大きい粗化
液で粗化する工程、 (b)無電解めっき反応を開始させることのできる触媒
を付与する工程、 (c)無電解めっきを行なう工程、 (d)めっき被膜上にエッチングレジストを形成する工
程、 (c)エッチングを行なう工程、 とを含むことを特徴とするほうろう配線板の製造法。 2、全ての処理液のpHが2〜13である特許請求の範
囲第1項記載のほうろう配線板の製造法。 3、結晶化釉ほうろう層が、ホウ素、ケイ素、マグネシ
ウム、バリウムを15<B_2O_3<35、10<S
iO_2<30、40<MgO+CaO+BaO<65
の割合(モル%)で含む結晶化ガラスである特許請求の
範囲第1項又は第2項記載のほうろう配線板の製造法。
[Claims] 1. Using an enamel substrate in which a metal core is covered with a crystallized glaze enamel layer consisting of a crystalline phase and an amorphous phase, (a) the amorphous phase is smaller than the crystalline phase; A step of roughening with a roughening solution having a high dissolution rate, (b) a step of applying a catalyst capable of starting an electroless plating reaction, (c) a step of performing electroless plating, (d) an etching process on the plating film. A method for producing an enameled wiring board, comprising the following steps: (c) forming a resist; (c) etching. 2. The method for manufacturing an enameled wiring board according to claim 1, wherein the pH of all the treatment liquids is 2 to 13. 3. The crystallized enamel layer contains boron, silicon, magnesium, and barium at 15<B_2O_3<35, 10<S
iO_2<30, 40<MgO+CaO+BaO<65
3. The method for manufacturing an enameled wiring board according to claim 1 or 2, wherein the enamel wiring board is crystallized glass containing a proportion (mol %) of
JP7383886A 1986-03-31 1986-03-31 Manufacture of enamelled wiring board Pending JPS62230086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7383886A JPS62230086A (en) 1986-03-31 1986-03-31 Manufacture of enamelled wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7383886A JPS62230086A (en) 1986-03-31 1986-03-31 Manufacture of enamelled wiring board

Publications (1)

Publication Number Publication Date
JPS62230086A true JPS62230086A (en) 1987-10-08

Family

ID=13529677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7383886A Pending JPS62230086A (en) 1986-03-31 1986-03-31 Manufacture of enamelled wiring board

Country Status (1)

Country Link
JP (1) JPS62230086A (en)

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