JPH07493B2 - Metallization method for crystallized glass surface - Google Patents

Metallization method for crystallized glass surface

Info

Publication number
JPH07493B2
JPH07493B2 JP19837986A JP19837986A JPH07493B2 JP H07493 B2 JPH07493 B2 JP H07493B2 JP 19837986 A JP19837986 A JP 19837986A JP 19837986 A JP19837986 A JP 19837986A JP H07493 B2 JPH07493 B2 JP H07493B2
Authority
JP
Japan
Prior art keywords
crystallized glass
plating
solution
aqueous solution
catalyst
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP19837986A
Other languages
Japanese (ja)
Other versions
JPS6355139A (en
Inventor
肇 中山
宏一 津山
寿郎 岡村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP19837986A priority Critical patent/JPH07493B2/en
Priority to EP19870302681 priority patent/EP0240268B1/en
Priority to DE8787302681T priority patent/DE3770507D1/en
Priority to US07/032,248 priority patent/US4859505A/en
Publication of JPS6355139A publication Critical patent/JPS6355139A/en
Publication of JPH07493B2 publication Critical patent/JPH07493B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は結晶化ガラス基板、結晶化ほうろう基板、結晶
化ガラスで表面被覆したセラミック基板等上への回路形
成に利用される結晶化ガラス表面の金属化法に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to a crystallized glass surface used for forming a circuit on a crystallized glass substrate, a crystallized enamel substrate, a ceramic substrate surface-coated with crystallized glass, or the like. The metallization method of.

(従来の技術) 従来、結晶化ガラス表面の金属化、特に回路形成方法と
しては、(a)金属ペーストを焼き付ける厚膜法や、
(b)スパッタや蒸着などを用いる薄膜法がある。
(c)また、最近はフッ酸やアルカリ金属の水酸化物溶
融液で表面粗化した後、通常の無電解めっき工程を用い
るめっき法も検討されている。
(Prior Art) Conventionally, as a method of metallizing the surface of crystallized glass, particularly a circuit forming method, (a) a thick film method of baking a metal paste,
(B) There is a thin film method using sputtering or vapor deposition.
(C) Further, recently, a plating method using a normal electroless plating process after roughening the surface with a hydrofluoric acid or a hydroxide melt of an alkali metal has been studied.

(発明が解決しようとする問題点) しかし、(a)厚膜法には導体抵抗が大きいことや、細
密な回路パターンが得られにくいことなどの欠点があ
り、(b)スパッタや蒸着法では金属膜厚を上げにくい
などの欠点があった。(c)めっき法はこれらの問題点
を解決するものであるが、これまでに検討されてきため
っき法には、フッ酸やアルカリ金属水酸化物溶融液の結
晶化ガラスに対する腐食力が強すぎるため、粗化面の凹
凸の制御が困難な上に、結晶化ガラスを脆弱化するた
め、めっき皮膜の密着力が得られにくい。また、フッ酸
やアルカリ金属水酸化物の溶融液は取扱いが危険であ
る。
(Problems to be Solved by the Invention) However, (a) the thick film method has drawbacks such as high conductor resistance and it is difficult to obtain a fine circuit pattern, and (b) the sputtering or vapor deposition method There were drawbacks such as difficulty in increasing the metal film thickness. (C) The plating method solves these problems, but the plating methods that have been studied so far have a too strong corrosive force against the crystallized glass of the hydrofluoric acid or alkali metal hydroxide melt. Therefore, it is difficult to control the unevenness of the roughened surface, and since the crystallized glass is weakened, it is difficult to obtain the adhesion of the plating film. In addition, it is dangerous to handle the molten liquid of hydrofluoric acid or alkali metal hydroxide.

仮に、結晶化ガラスを脆弱化せずに粗化面の凹凸がある
程度制御できても、次の無電解めっき反応を開始させる
ことのできる触媒を付与する工程で通常高濃度の塩酸水
溶液を用いるために、結晶化ガラスは脆弱化され、この
後無電解めっきを行なってもめっき皮膜の充分な密着力
が得られない。さらに、アルカリ金属酸化物やアルカリ
土類金属酸化物を多く含む結晶化ガラスの場合、弱酸
(pH3以下)や弱アルカリ(pH10以上)の水溶液によっ
ても溶解する。一方、めっき触媒となるパラジウムを塩
化パラジウムの状態で中性の水溶液を溶解させようとす
ると水酸化パラジウムが生成して沈殿してしまう。
Even if the roughness of the roughened surface can be controlled to some extent without weakening the crystallized glass, a high-concentration hydrochloric acid aqueous solution is usually used in the step of adding a catalyst that can start the next electroless plating reaction. Moreover, the crystallized glass is weakened, and even if electroless plating is performed thereafter, sufficient adhesion of the plating film cannot be obtained. Furthermore, in the case of crystallized glass containing a large amount of alkali metal oxides or alkaline earth metal oxides, it is dissolved even by an aqueous solution of a weak acid (pH 3 or less) or a weak alkali (pH 10 or more). On the other hand, when palladium which serves as a plating catalyst is dissolved in a neutral aqueous solution in the state of palladium chloride, palladium hydroxide is produced and precipitated.

本発明は、結晶化ガラス表面に密着力の優れためっき皮
膜を形成する金属化法を提供するものである。
The present invention provides a metallization method for forming a plating film having excellent adhesion on the surface of crystallized glass.

(問題点を解決するための手段) 本発明は結晶化ガラス表面をフッ化物塩を添加した水溶
液で粗化した後、無電解めっき反応を開始させることの
できる触媒を付与する処理を中性の非水溶液を用いて行
ないその後に無電解めっきを行なうことを特徴とする結
晶化ガラス表面の金属化法である。
(Means for Solving Problems) In the present invention, after the surface of the crystallized glass is roughened with an aqueous solution containing a fluoride salt, a treatment for imparting a catalyst capable of initiating an electroless plating reaction is performed with a neutral solution. This is a metallization method for the surface of crystallized glass, which is characterized by performing non-aqueous solution and then performing electroless plating.

本発明で用いる粗化液は、NaFやKFなどのフッ化物塩を
5〜50g/、好ましくは、1〜30g/の濃度になるよう
に水に溶解したものであり、場合によっては、さらにク
ェン酸ナトリウムや酒石酸ナトリウムなどのようなSiと
錯体をつくるような有機酸塩やフッ化物塩が加水分解し
てアルカリ性(pH7〜8)を示している水溶液を中性に
もどすための微量の酸などが添加されることもある。ま
た、粗化液の温度は70〜85℃、好ましくは75〜80℃と
し、結晶化ガラスをこの水溶液中に約50分間浸漬するこ
とで、結晶化ガラス中に存在する非晶質相を結晶質相に
比べ速く溶解し、めっき皮膜のアンカー効果が大きくな
るような粗化面を形成する。主として酸化ケイ素、酸化
ホウ素、アルカリ土類金属酸化物からなる結晶化ガラス
の場合、結晶質相中には多くのアルカリ土類金属酸化物
が含まれる傾向がある。
The roughening solution used in the present invention is a solution of a fluoride salt such as NaF or KF dissolved in water to a concentration of 5 to 50 g /, preferably 1 to 30 g /. Trace amount of acid to return neutrality of aqueous solution which shows alkaline (pH 7-8) due to hydrolysis of organic acid salt or fluoride salt that forms complex with Si such as sodium acid salt or sodium tartrate. May be added. The temperature of the roughening solution is 70 to 85 ° C, preferably 75 to 80 ° C, and the crystallized glass is immersed in this aqueous solution for about 50 minutes to crystallize the amorphous phase present in the crystallized glass. It forms a roughened surface that dissolves faster than the material phase and increases the anchor effect of the plating film. In the case of crystallized glass mainly composed of silicon oxide, boron oxide and alkaline earth metal oxide, a large amount of alkaline earth metal oxide tends to be contained in the crystalline phase.

結晶化ガラスは結晶質相と非晶質相とより成っている
が、結晶質相が数種の相(組成)より成っている場合が
あるが、本発明では、粗化面には結晶質相の少なくとも
一つの相が残り、その後に施すめっき膜との密着力を大
きくする粗化面を形成することが出来る。
Although crystallized glass is composed of a crystalline phase and an amorphous phase, the crystalline phase may be composed of several kinds of phases (compositions). At least one of the phases remains, and it is possible to form a roughened surface that increases the adhesion with the plating film to be applied thereafter.

次に行なう触媒付与工程では、非水溶液、好ましくは比
誘電率が30以上のもので、例えばホルムアミド、モノメ
チルホルムアミド、ジメチルホルムアミド、ジメチルア
セトアミド、メチルアルコール、およびそれらの混合物
に塩化パラジウムを溶解させた処理液Aとパラジウムの
還元剤としてジメチルアミノボラン(DMAB)や水素化ホ
ウ素ナトリウム(NaBH4)次亜リン酸ナトリウムなどを
上記と同様な非水溶液に溶解させた処理液Bを用い、A
→Bの順序で粗化面した結晶化ガラスを浸漬することで
触媒付与する。なお、A液には、水酸化パラジウムの沈
殿を生じない程度の水分の存在は許され、B液について
も還元効果が低下しない程度(即ちB液処理後水酸化パ
ラジウムの沈澱を生じない程度)の水分の存在は許され
る。
In the subsequent step of applying a catalyst, a treatment in which palladium chloride is dissolved in a non-aqueous solution, preferably one having a relative dielectric constant of 30 or more, such as formamide, monomethylformamide, dimethylformamide, dimethylacetamide, methyl alcohol, and a mixture thereof. A liquid A and a treatment liquid B prepared by dissolving dimethylaminoborane (DMAB) or sodium borohydride (NaBH 4 ) sodium hypophosphite in a non-aqueous solution similar to the above as a reducing agent for palladium are used.
The catalyst is applied by immersing the crystallized glass having the roughened surface in the order of → B. It should be noted that liquid A is allowed to contain water to the extent that palladium hydroxide does not precipitate, and liquid B does not reduce the reducing effect (that is, to the extent that palladium hydroxide does not precipitate after treatment with liquid B). The presence of water is allowed.

さらに、次のめっき液中にB液を含まれるような還元剤
が含まれておればB液の処理はなくてもよい。また、
A、B液の寿命を長くするために好ましくは、プレディ
ップ→A液→洗浄→B液とし、さらに好ましくはプレデ
ィップ液はA液の溶媒と、洗浄液はB液の溶媒と同じも
のを使う。一方、パラジウムは溶媒和した形で存在して
いるので、非水溶液系の触媒付与工程の後に水で強く洗
浄すると脱落する場合があるが洗浄せずにめっき液に入
れるとめっき液中で触媒の一部が脱落し、めっき槽など
目的物以外にもめっきが析出し、めっき液が急速に分解
する。上記の問題点を解決するために、めっき液と同程
度に加熱した水中に粗化面一触媒付与した結晶化ガラス
を浸漬した後、めっき液に入れると良い。
Further, if the next plating solution contains a reducing agent containing the solution B, the solution B may not be treated. Also,
In order to prolong the life of solutions A and B, it is preferable to use pre-dip → solution A → washing → solution B. More preferably, the pre-dip solution is the solvent of solution A and the washing solution is the same solvent as solution B. . On the other hand, since palladium is present in a solvated form, it may drop off if strongly washed with water after the non-aqueous catalyst application step, but if it is put into the plating solution without washing, it will not react with the catalyst in the plating solution. A part of it drops off, plating is deposited on other than the target object such as the plating tank, and the plating solution decomposes rapidly. In order to solve the above problems, it is advisable to immerse the crystallized glass with a roughened surface-catalyzed catalyst in water heated to the same extent as the plating solution, and then add the crystallized glass to the plating solution.

めっき液も中性に近いもの(pH3〜13)が好ましい。The plating solution is preferably close to neutral (pH 3 to 13).

実施例 本発明による結晶化ガラス表面の金属化法の工程を第1
図に示した。ここで用いた結晶化ガラスの組成はB2O3
20,SiO2=15,MgO=55,BaO=5,SrO=5(以上モル%)で
ある。
EXAMPLE First step of metallization method of crystallized glass surface according to the present invention
As shown in the figure. The composition of the crystallized glass used here is B 2 O 3 =
20, SiO 2 = 15, MgO = 55, BaO = 5, SrO = 5 (above mol%).

上記組成の結晶化ガラス基板の表面をメチルエチルケト
ン(MEK)で洗浄することで脱脂し、MEKが完全に蒸発し
た後、NaFを12g/添加した純水(80℃、pH7.6)に50分
間浸漬することで基板表面を粗化した。この粗化面を電
子顕微鏡(SEM)で観察したところ直径0.5〜2μmの粒
子の積み重なった状態を示していた。粗化した基板は流
水洗した後、ジメチルホルムアミド(DMF)溶液中に1
分間浸漬した後0.5g/の塩化パラジウム(PdCI2)を溶
解させたDMF中に3分間浸漬し、その後余分なPdCI2を除
くためにDMFに0.1分間程度浸漬し、次にパラジウムの還
元剤であるジメチルアミノボラン(DMAB)を1g/を含
むDMF中に3分間浸漬する。このようにしてシーディン
グした基板は、無電解めっき液と同温程度(70℃)に加
熱した純水に3分間程度浸漬して、めっき液中で脱落の
恐れのあるシーダ(Pd)を除去しておき、最後にホルマ
リンを還元剤とする無電解銅めっき液(70℃、pH12.3)
に浸漬した。
The surface of the crystallized glass substrate with the above composition was degreased by washing with methyl ethyl ketone (MEK), and after MEK was completely evaporated, it was immersed in pure water (80 ° C, pH 7.6) containing 12 g of NaF for 50 minutes. By doing so, the substrate surface was roughened. When the roughened surface was observed with an electron microscope (SEM), it was shown that particles having a diameter of 0.5 to 2 μm were stacked. The roughened substrate is washed with running water and then placed in a dimethylformamide (DMF) solution.
After soaking for 3 minutes, soak in DMF in which 0.5g / palladium chloride (PdCI 2 ) is dissolved for 3 minutes, then soak in DMF for about 0.1 minutes to remove excess PdCI 2 , and then use a reducing agent for palladium. One dimethylaminoborane (DMAB) is immersed in DMF containing 1 g / for 3 minutes. The substrate seeded in this way is immersed in pure water heated to the same temperature (70 ° C) as the electroless plating solution for about 3 minutes to remove the seeder (Pd) that may fall off in the plating solution. Finally, an electroless copper plating solution (70 ℃, pH12.3) that uses formalin as a reducing agent.
Soaked in.

このようにして形成しためっき皮膜の密着力を調べたと
ころ2.8kg/mm2で結晶化ガラスの方が破壊してしまっ
た。これから、めっき皮膜の密着力は2.8kg/mm2以上で
ある。
When the adhesion of the plating film thus formed was examined, the crystallized glass was broken at 2.8 kg / mm 2 . From this, the adhesion of the plating film is 2.8 kg / mm 2 or more.

通常用いられている高濃度塩酸水溶液系の触媒付与工程
を使った場合の密着力は0.2〜0.5kg/mm2で、1〜10g/
のNaOHを含む非水溶液系の触媒付与工程を使った場合の
密着力は0.5〜2.3kg/mm2であった。
Adhesion strength is 0.2-0.5 kg / mm 2 , 1-10 g /
Adhesion was 0.5 to 2.3 kg / mm 2 when using the non-aqueous catalyst application process containing NaOH.

また、これらの触媒付与後の基板表面をSEMで観察した
ところ、本発明の触媒付与後基板表面は粗化と変化なか
ったのに比べ、他の2方法で触媒付与を行なった基板の
粗化面は程度の差はあれ(高濃度塩酸系:破壊大)破壊
されていた。
Further, when the surface of the substrate after applying the catalyst was observed by SEM, it was found that the surface of the substrate after applying the catalyst of the present invention did not change from roughening, whereas the surface of the substrate on which the catalyst was added by the other two methods was roughened. The surface was destroyed to some extent (high-concentration hydrochloric acid system: major destruction).

(発明の効果) 本発明により結晶化ガラスの表面にめっきによる金属皮
膜を密着性よく形成することができる。これによってめ
っき法による回路形成も可能となり、これまで困難であ
ったスルーホール配線が容易となること、導体回路のシ
ート抵抗を小さくできること、焼成を伴なわないため基
板の反りや寸法変化がないことなど特性面が向上する
他、コストの大幅な低下が見込まれる。
(Effects of the Invention) According to the present invention, a metal film by plating can be formed on the surface of crystallized glass with good adhesion. This makes it possible to form circuits by plating, facilitates through-hole wiring, which was difficult until now, reduces the sheet resistance of the conductor circuit, and does not warp the substrate or change its dimensions because it does not involve firing. In addition to improving the characteristics, the cost is expected to drop significantly.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の方法を示す工程図である。 FIG. 1 is a process drawing showing the method of the present invention.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】ホウ素、ケイ素、マグネシウム、バリウム
を、15〈B2O3〈35、10〈SiO2〈30、40〈MgO+CaO+BaO
〈65の割合で含む結晶化ガラスであって、かつ、結晶質
相と非晶質相から成る結晶化ガラス表面を、 (a) フッ化物塩の水溶液で粗化する工程、 (b) 無電解めっき反応を開始させることのできる非
水溶液の触媒を付与する工程、 (c) 無電解めっきを行う工程、 とを含むことを特徴とする結晶化ガラス表面の金属化
法。
1. Boron, silicon, magnesium and barium are added to 15 <B 2 O 3 <35, 10 <SiO 2 <30, 40 <MgO + CaO + BaO.
A step of roughening the surface of the crystallized glass, which is a crystallized glass containing <65, with a crystalline phase and an amorphous phase with (a) an aqueous solution of a fluoride salt, (b) electroless A method of metallizing a surface of a crystallized glass, which comprises: a step of applying a non-aqueous solution catalyst capable of initiating a plating reaction; and (c) a step of performing electroless plating.
JP19837986A 1986-03-31 1986-08-25 Metallization method for crystallized glass surface Expired - Lifetime JPH07493B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP19837986A JPH07493B2 (en) 1986-08-25 1986-08-25 Metallization method for crystallized glass surface
EP19870302681 EP0240268B1 (en) 1986-03-31 1987-03-27 Process for metallizing glass surface
DE8787302681T DE3770507D1 (en) 1986-03-31 1987-03-27 METHOD FOR METALLIZING GLASS SURFACES.
US07/032,248 US4859505A (en) 1986-03-31 1987-03-31 Process for metallizing glass surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19837986A JPH07493B2 (en) 1986-08-25 1986-08-25 Metallization method for crystallized glass surface

Publications (2)

Publication Number Publication Date
JPS6355139A JPS6355139A (en) 1988-03-09
JPH07493B2 true JPH07493B2 (en) 1995-01-11

Family

ID=16390139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19837986A Expired - Lifetime JPH07493B2 (en) 1986-03-31 1986-08-25 Metallization method for crystallized glass surface

Country Status (1)

Country Link
JP (1) JPH07493B2 (en)

Also Published As

Publication number Publication date
JPS6355139A (en) 1988-03-09

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