JPS62213267A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPS62213267A JPS62213267A JP61056418A JP5641886A JPS62213267A JP S62213267 A JPS62213267 A JP S62213267A JP 61056418 A JP61056418 A JP 61056418A JP 5641886 A JP5641886 A JP 5641886A JP S62213267 A JPS62213267 A JP S62213267A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- image sensor
- peeling
- sensor chip
- semiconductor image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 7
- 239000000057 synthetic resin Substances 0.000 claims abstract description 7
- 230000002265 prevention Effects 0.000 claims description 6
- 229920005989 resin Polymers 0.000 abstract description 35
- 239000011347 resin Substances 0.000 abstract description 35
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract description 12
- 230000003405 preventing effect Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 3
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 239000006059 cover glass Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 241000255925 Diptera Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- -1 for example Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、たとえば内視鏡などに用いられる固体撮像素
子に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a solid-state image sensor used in, for example, an endoscope.
特に、内視鏡に用いる固体撮像素子は小形化が望まれる
。この九め、未公開の先行出願（特願昭６０−４６０３
６号）ではイメージセンサ部を透光性の樹脂で直接に封
止するものが提案されている。In particular, it is desired that solid-state imaging devices used in endoscopes be made smaller. This ninth, unpublished prior application (patent application 1986-4603)
No. 6) proposes a method in which the image sensor section is directly sealed with a translucent resin.
ところで、上記固体撮像素子ではチップ表面に接合する
樹脂とそのチップ自体の熱膨張率が異なるため、気温な
どによる温度の変化を受けると、その両者間に応力が加
わり、はく離する可能性がある。By the way, in the above-mentioned solid-state image sensing device, since the coefficient of thermal expansion of the resin bonded to the chip surface and the chip itself are different, when the temperature changes due to air temperature or the like, stress is applied between the two and there is a possibility that they may peel off.
特に、同視鏡においてはオートクレーブによる滅菌処理
が行なわれる念め、その温度差が激しく上述したはく離
現象が起き易い。In particular, since the scope is sterilized using an autoclave, the temperature difference is large and the above-mentioned peeling phenomenon is likely to occur.
本発明は上記問題点に着目してなされたもので、その目
的とするところは半導体イメージセンサチップを保護し
てｂる樹脂とこれを貼り合わせである部材との間での剥
離を比較的簡単な手段で極力防止できるようにした固体
撮像素子を提供することにある。The present invention has been made in view of the above-mentioned problems, and its purpose is to make it relatively easy to separate the resin that protects the semiconductor image sensor chip from the member to which it is bonded. It is an object of the present invention to provide a solid-state imaging device that can prevent such problems as much as possible by suitable means.
〔問題点を解決するための手段および作用〕上記問題点
を解決するために本発明は、半導体イメージセンサ−チ
ップにおける受光部とその周辺を透明な合成樹脂で空隙
なく被覆して封止するとともに、その合成樹脂とこれを
接合する′部材との間に粗面等による剥離防止手段を設
け、その両者間の剥離を防止するようにした固体撮像素
子である。[Means and effects for solving the problems] In order to solve the above problems, the present invention covers and seals the light-receiving part and its surroundings in a semiconductor image sensor chip without any gaps with a transparent synthetic resin. This is a solid-state imaging device in which peeling prevention means such as a rough surface is provided between the synthetic resin and the member to which they are bonded to prevent peeling between the two.
第１図ないし第３図は本発明の第１の実施例を示すもの
である。1 to 3 show a first embodiment of the present invention.
同図中１はその固体撮ｆ３！素子のセラミックス製の台
座であり、この台座１の上面中央部分は凸状の高部２が
形成されてｈる。この高部２のまわりにはその高部２よ
り低い低部３が形成されている。また、台座１の左右側
部４．５は上記高部２より高く形成されている。この各
側部４．５には上下に突き抜ける切欠き６・・・、７・
・・が形成されている。そして、この各切欠き６・・・
。1 in the figure is the solid-state camera f3! This is a ceramic pedestal for the device, and a convex high portion 2 is formed at the center of the upper surface of the pedestal 1. A low portion 3 lower than the high portion 2 is formed around the high portion 2. Furthermore, the left and right side parts 4.5 of the base 1 are formed higher than the high part 2. Each side portion 4.5 has cutouts 6..., 7, which penetrate upward and downward.
... is formed. And each notch 6...
.
７・・・にはそれぞれピン１ｏ・・・、１１・・・ヲ有
スる電極８・・・、９・・・を固定的に埋め込んで設電
しである。Electrodes 8, 9, etc., which have pins 1o, 11, and so on, are fixedly embedded in the electrodes 7, respectively, and are electrically connected.
上記高部２の上面には全面的に半導体イメージセンサ−
チップ１２がダイ？ンデイングにより取着されている。A semiconductor image sensor is mounted entirely on the upper surface of the above-mentioned high part 2.
Chip 12 is die? It is attached by binding.
そして、半導体イメージセンサ−チップ１２はその周辺
１３番除いて中央部分を受光部１４としたものである。The semiconductor image sensor chip 12 has a light-receiving section 14 at its center, excluding the periphery 13.
ま九、周辺１３には複数のがンデイングパット１５・・
・が設けられている。そして、上記周辺１２には受光部
１４およびゼンディング１４ット１５・・・の近接周部
１６を除き、複数個所に分れて粗面１７・・・が形成さ
れている。また、粗面１２・・・全形成しない上記近接
周部１６は平滑な表面となっている。さらに、上記低部
３の表面も粗面１８に形成されている。9th place, there are multiple ganding putts 15 around 13...
・ is provided. Rough surfaces 17 are formed on the periphery 12 at a plurality of locations, except for the light-receiving portion 14 and the adjacent peripheral portions 16 of the shedding 14 and 15 . Further, the rough surface 12...the adjacent peripheral portion 16, which is not completely formed, has a smooth surface. Further, the surface of the lower portion 3 is also formed into a rough surface 18.
上記各電極８・・・、９・・・とＩンデインダノ々ット
１５・・・とは？ンデングワイヤ１９・・・によりワイ
ヤはンデング接続されている。What are the above-mentioned electrodes 8..., 9... and the inner electrodes 15...? The wires are connected by connecting wires 19 .
さらに、左右側部４，５を除く台部１の縁部２０．２１
上面には剥離防止用ボンディングワイヤ２２．２３の両
端がゲンデインダ接続されている。この剥離防止用ボン
ディングワイヤ２２ 、２３の両端は縁部２０ ＃ ２
１の上面に設けたデンデインダノ９ット２２１＊２３ｇ
にろう付けされている。このボンディングワイヤ２２゜
２３の中間部分は高部２の高さで湾曲している。Furthermore, the edges 20.21 of the platform 1 excluding the left and right sides 4, 5
Both ends of bonding wires 22 and 23 for preventing peeling are connected to the upper surface. Both ends of the bonding wires 22 and 23 for preventing peeling are edge portions 20 #2.
1. Dendering Dano 9 pieces 221*23g provided on the top surface of 1
It is soldered to. The intermediate portions of the bonding wires 22 and 23 are curved at the height of the high portion 2.
そして、これらを構成し九台座１の全上面には透明な樹
脂２イを空隙なく被覆してそれらを封止しである。この
樹脂２４は九とえは透明な工Ｉキシ樹脂からなる。また
、この樹脂２４０表面には透明なカバーがラス２５が貼
り付けられている。このカバーがラス２５は樹脂２４の
熱膨張収縮によるそりを防止するものである。Then, the entire upper surface of the nine pedestals 1 is covered with a transparent resin 2 without any gaps to seal them. This resin 24 is made of transparent resin. Further, a transparent cover lath 25 is attached to the surface of this resin 240. The cover lath 25 prevents the resin 24 from warping due to thermal expansion and contraction.
ところで、上記透明な樹脂２４を溶融して上記台座１の
上面部に被着するとき、上記半導体イメージセンサ−チ
ップ１２の縁は第３図で示すように高部２の上面周囲か
らはみ出しているので、その樹脂２４はまわり込み、そ
の半導体イメージセンサ−チップ３を強固に固定する。Incidentally, when the transparent resin 24 is melted and applied to the upper surface of the pedestal 1, the edge of the semiconductor image sensor chip 12 protrudes from the periphery of the upper surface of the high portion 2, as shown in FIG. Therefore, the resin 24 wraps around and firmly fixes the semiconductor image sensor chip 3.
′ｔｆｔ：、、半導体イメージセンサ−チップ１２の周
辺１３には粗面１’ ７−・・を形成しであるので、こ
の粗面１７・・・には上記樹脂２４が強固に結合して剥
離を生じにくくする。つまり、粗面１７・・・は半導体
イメージセンサ−チップ１２と樹脂２４との接合部の剥
離を防止する手段を構成する。なお、半導体イメージセ
ンサ−チップ１２の受光部１４は種々の／臂ターンが形
成されているため、一種の粗面状態にあり、これが樹脂
２４との結合強度を高めている。'tft:,, Since a rough surface 1' 7-... is formed on the periphery 13 of the semiconductor image sensor chip 12, the resin 24 is firmly bonded to this rough surface 17... and cannot be peeled off. make it less likely to occur. In other words, the rough surfaces 17 constitute a means for preventing the joint between the semiconductor image sensor chip 12 and the resin 24 from peeling off. Since the light receiving section 14 of the semiconductor image sensor chip 12 is formed with various turns, it has a kind of rough surface, which increases the bonding strength with the resin 24.
さらに、この実施例では台座１の低部３にも粗面１８が
形成されているため、この粗面１８により上記樹脂２４
を台座１に対して強く結合させている。また、台座１に
設けたゴンデンダワイヤ２２．２３の中間部は上記樹脂
２４内に埋め込まれて一体化するため、さらに、台座１
と樹脂２４とを強く結合し、樹脂２４の剥離を防止する
。Furthermore, in this embodiment, since a rough surface 18 is also formed on the lower part 3 of the pedestal 1, this rough surface 18 allows the resin 24 to
is strongly coupled to the pedestal 1. Furthermore, since the intermediate portions of the gondender wires 22 and 23 provided on the pedestal 1 are embedded in the resin 24 and integrated, the pedestal 1
and the resin 24 are strongly bonded to prevent the resin 24 from peeling off.
（−かして、上記Ｗ５Ｅによれば、半導体イメージセン
サ−チップ１２と樹脂２４とは粗面１７・・・てＬりそ
の結合強度が高する。し念がって、この部分の剥離を１
カ防止できる。さらに、台座１と樹脂２４とは低部３の
粗面１８やゲンデンクワイヤ２２．２３’ｆ７−どの剥
離防止手段によって積極的に結合される几め、その間に
おける剥離が阻止される。したがって、この台座１と樹
脂２４との間での剥離が成長して上記半導体イメー・ノ
センサーチップ１２０部分に至る現象を未然に防止でき
る。(According to W5E above, the bonding strength between the semiconductor image sensor chip 12 and the resin 24 is increased due to the rough surface 17. 1
It can prevent mosquitoes. Furthermore, the pedestal 1 and the resin 24 are positively bonded together by the rough surface 18 of the lower portion 3 and the peel-off prevention means such as the rough surface 18 of the lower part 3 and the loose wire 22, 23'f7, so that peeling between them is prevented. Therefore, it is possible to prevent the phenomenon in which the separation between the pedestal 1 and the resin 24 grows and reaches the semiconductor image sensor chip 120 portion.
ところで、上記半導体イメーノセンサーチップ１２にお
ける粗面１７・・・はいわゆる半導体プロ七スにおいて
形成できる。すなわち、上記製造工程の途中においてそ
のチップ表面に７オトレジストを塗布するとともに、チ
ップ周辺部にフォトマクスＶＣより粗面１７・・・に対
応する部分を印刷し、エツチングにより粗面１７・・・
を形成するのである。By the way, the rough surfaces 17 in the semiconductor image sensor chip 12 can be formed in a so-called semiconductor process. That is, in the middle of the above manufacturing process, a photoresist 7 is applied to the surface of the chip, a portion corresponding to the rough surface 17 is printed on the periphery of the chip using Photomax VC, and the rough surface 17 is etched.
It forms.
第４図シエ本発明の第２の実施例を示すものでらる。FIG. 4 shows a second embodiment of the present invention.
この実施例では半導体イメーノセンサーチップ１２をプ
リント基板３０に対して直接に貼り付け、ワンヤーゲン
デイングしたものである。In this embodiment, the semiconductor image sensor chip 12 is directly attached to the printed circuit board 30, and the semiconductor image sensor chip 12 is attached one year later.
さらに、半導体イメージセンサ−チップ１２の表面には
第１の実施例と同じ粗面１７・・・が形成されている。Furthermore, the same rough surface 17 as in the first embodiment is formed on the surface of the semiconductor image sensor chip 12.
そして、この半導体イメージセンサ−チップ１２ｆ！：
全体的に覆うように透明な樹脂２４で被覆しである。ま
た、上紀四脂２４の表面を平滑にすることにより、カバ
ープラスを省略して小形化を図っている。And this semiconductor image sensor chip 12f! :
It is coated with a transparent resin 24 so as to cover the entire body. Furthermore, by making the surface of the Joki Shiko 24 smooth, the cover plus is omitted and the size is reduced.
なお、半導体イメージセンサ−チップの表面を覆ら樹脂
に弾性の高い、たとえばシリコン樹脂を用＾て剥離防止
手段を構成してもよい。この場合にはより剥離防止効果
が高まる。すなわち、半導体イメージセンサ−チップと
樹脂との膨張率の差による応力はその可脂自体が変形し
て吸収するので、その接合部間を剥離させるには至らな
い。また、このように弾性の高い樹脂を用いて剥離防止
手段を構成した場合には上記粗向を必ずしも設けなくて
も充分な剥離防止効果が得られる。さらに、この樹脂を
用いている場合には表面精度が落ちるので、カバーガラ
スを用いｔはうが好ましいが、このカバープラスと樹脂
との膨張の差もその樹脂で吸収し、剥離を防止できる。Note that the peeling prevention means may be constructed by using a highly elastic resin, for example, silicone resin, to cover the surface of the semiconductor image sensor chip. In this case, the peeling prevention effect is further enhanced. In other words, the stress caused by the difference in expansion coefficient between the semiconductor image sensor chip and the resin is absorbed by the resin itself by deformation, so that the bonded portions do not separate. Furthermore, when the peeling preventing means is constructed using a highly elastic resin as described above, a sufficient peeling preventing effect can be obtained without necessarily providing the above-mentioned rough direction. Furthermore, if this resin is used, the surface precision will be degraded, so it is preferable to use a cover glass, but the difference in expansion between the Cover Plus and the resin can be absorbed by the resin and peeling can be prevented.
カバーガラスにも透光部以外に粗面を設けてもＬい。Even if the cover glass is provided with a rough surface other than the light-transmitting part, it will also be useful.
以上説明し友ように本発明によれば、固体撮像素子にお
いて半導体イメージセンサチツプを保護している樹脂と
これを貼り合せである部材との間での＠離を防止し、特
に、温度差が著しいときにも剥離を極力防止できる。As explained above, according to the present invention, it is possible to prevent separation between the resin that protects the semiconductor image sensor chip in a solid-state image sensor and the member to which it is bonded, and in particular, to prevent temperature differences. Peeling can be prevented as much as possible even in severe cases.
【図面の簡単な説明】
第１図は本発明の第１の実施列の平面図、第２図は第１
図中１ｌ−ＩＩ＃！ＩＣ沿う断面図、第３図は第１図中
ｌｌｌ−１１１１線に溢う断面図、第４図は本発明の第
２の実施例の側断面図である。
１・・・台座、２・・・高部、３・・・低部、８，９・
・・電極、１２・・・半導体イメージセンサ−チップ。
Ｊ４・・・受光部、１７・・・粗面、Ｉ８・・・粗面、
２２゜２３・・・ゼンディングワイヤ、２４・・・Ｉｎ
。[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a plan view of the first implementation row of the present invention, and FIG.
1l-II# in the figure! FIG. 3 is a sectional view taken along the IC, FIG. 3 is a sectional view taken along line 11-1111 in FIG. 1, and FIG. 4 is a side sectional view of the second embodiment of the present invention. 1...Pedestal, 2...High part, 3...Low part, 8,9.
...Electrode, 12...Semiconductor image sensor chip. J4... Light receiving part, 17... Rough surface, I8... Rough surface,
22゜23...Zending wire, 24...In
.
Claims (2)
体イメージセンサーチップと、この半導体イメージセン
サーチップの上記受光部およびその周辺を空隙なく被覆
して封止する透明な合成樹脂と、上記受光部を除く部分
で上記合成樹脂とこれを接合する部材との間に設けられ
た剥離防止手段とを具備したことを特徴とする固体撮像
素子。(1) a semiconductor image sensor chip having a light receiving part that converts incident light into an electrical signal; a transparent synthetic resin that covers and seals the light receiving part and its surroundings without any gaps; 1. A solid-state image pickup device, comprising peeling prevention means provided between the synthetic resin and a member to which the synthetic resin is bonded in a portion other than the light-receiving portion.
ーチップにおける表面で上記受光部以外の部位に粗面を
形成してなり、この粗面により上記合成樹脂との接合強
度を高めるものであることを特徴とする特許請求の範囲
第１項に記載の固体撮像素子。(2) The peeling prevention means is formed by forming a rough surface on the surface of the semiconductor image sensor chip at a portion other than the light receiving portion, and the rough surface increases the bonding strength with the synthetic resin. A solid-state image sensor according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61056418A JPS62213267A (en) | 1986-03-14 | 1986-03-14 | Solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61056418A JPS62213267A (en) | 1986-03-14 | 1986-03-14 | Solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62213267A true JPS62213267A (en) | 1987-09-19 |
Family
ID=13026561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61056418A Pending JPS62213267A (en) | 1986-03-14 | 1986-03-14 | Solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62213267A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01260845A (en) * | 1988-02-22 | 1989-10-18 | Motorola Inc | Semiconductor device |
| JPH08264683A (en) * | 1995-03-15 | 1996-10-11 | Siemens Ag | Semiconductor device with resin mold coating and its preparation |
| JP2017204494A (en) * | 2016-05-09 | 2017-11-16 | オリンパス株式会社 | Electronic substrate for medical equipment |
-
1986
- 1986-03-14 JP JP61056418A patent/JPS62213267A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01260845A (en) * | 1988-02-22 | 1989-10-18 | Motorola Inc | Semiconductor device |
| JPH08264683A (en) * | 1995-03-15 | 1996-10-11 | Siemens Ag | Semiconductor device with resin mold coating and its preparation |
| US5742098A (en) * | 1995-03-15 | 1998-04-21 | Siemens Aktiengesellschaft | Semiconductor component with plastic sheath and method for producing the same |
| JP2017204494A (en) * | 2016-05-09 | 2017-11-16 | オリンパス株式会社 | Electronic substrate for medical equipment |
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