JPS62210607A - Magnetic alloy film - Google Patents
Magnetic alloy filmInfo
- Publication number
- JPS62210607A JPS62210607A JP5405486A JP5405486A JPS62210607A JP S62210607 A JPS62210607 A JP S62210607A JP 5405486 A JP5405486 A JP 5405486A JP 5405486 A JP5405486 A JP 5405486A JP S62210607 A JPS62210607 A JP S62210607A
- Authority
- JP
- Japan
- Prior art keywords
- film
- alloy film
- magnetic alloy
- nitride
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001004 magnetic alloy Inorganic materials 0.000 title claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 5
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 4
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 4
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract 3
- 229910052721 tungsten Inorganic materials 0.000 claims abstract 3
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 14
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 18
- 238000005121 nitriding Methods 0.000 abstract description 8
- 230000005389 magnetism Effects 0.000 abstract description 7
- 230000005415 magnetization Effects 0.000 abstract description 7
- 150000002739 metals Chemical class 0.000 abstract description 5
- 229910001092 metal group alloy Inorganic materials 0.000 abstract description 4
- 229920006395 saturated elastomer Polymers 0.000 abstract 3
- 239000007789 gas Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910020018 Nb Zr Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910007744 Zr—N Inorganic materials 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- QIVUCLWGARAQIO-OLIXTKCUSA-N (3s)-n-[(3s,5s,6r)-6-methyl-2-oxo-1-(2,2,2-trifluoroethyl)-5-(2,3,6-trifluorophenyl)piperidin-3-yl]-2-oxospiro[1h-pyrrolo[2,3-b]pyridine-3,6'-5,7-dihydrocyclopenta[b]pyridine]-3'-carboxamide Chemical compound C1([C@H]2[C@H](N(C(=O)[C@@H](NC(=O)C=3C=C4C[C@]5(CC4=NC=3)C3=CC=CN=C3NC5=O)C2)CC(F)(F)F)C)=C(F)C=CC(F)=C1F QIVUCLWGARAQIO-OLIXTKCUSA-N 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910001199 N alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は磁気ヘッド等に適した磁性合金膜に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a magnetic alloy film suitable for magnetic heads and the like.
従来の技術
従来よりＡｒ ガス中にＮ２ガスを混入させたスパッタ
ー法や、窒化物をターゲットに用いたスパッター法によ
り、窒素を含む磁性合金膜の作成が試みられて来た。こ
れらのもには、Ｆｅ、Ｃｏ、Ｎｉとガラス化元素Ｂ 、
Ｓｉ、Ａｄ、Ｐ、Ｃ等より成る合金の窒化膜（特開昭５
４−９４４２８号公報、及び同６０−１５２６５１号公
報）や、Ｆｅの窒化物の研究がある（ジャーナル オブ
アプライドフィジックス（Ｊ、Ａｐｐｌ Ｐｈｙｓ
、）５３（１１）Ｐ８３３２〜３４（１９Ｂ２））。前
者においては、たとえばＦｅ−Ｂ系を窒化したＦｅ−Ｂ
−Ｎ においては垂直磁気異方性が増加したりして、Ｆ
ｅ−Ｂ系合金の有する軟磁性がそこなわれ、抗磁力Ｈａ
の大きな磁性膜になるほか、飽和磁化４□Ｍ もＮ含有
量と伴に低下する事が知られている。後者においては微
毫のＮを含む場合４１Ｍ はむしろＦｅのそれより微か
に増加するが、このＦｅ−Ｎ系合金膜のＨａはやはり大
きく軟磁性を示さないことが知られている。2. Description of the Related Art Conventionally, attempts have been made to create a magnetic alloy film containing nitrogen by a sputtering method using N2 gas mixed into Ar gas or a sputtering method using nitride as a target. These include Fe, Co, Ni and vitrifying element B,
Nitride film of alloy consisting of Si, Ad, P, C, etc.
4-94428 and 60-152651), and research on Fe nitrides (Journal of Applied Physics).
, ) 53 (11) P8332-34 (19B2)). In the former case, for example, Fe-B nitrided Fe-B system is used.
-N, the perpendicular magnetic anisotropy increases and F
The soft magnetism of the e-B alloy is damaged, and the coercive force Ha
It is known that the saturation magnetization 4□M also decreases as the N content increases. In the latter case, when a small amount of N is included, 41M increases slightly more than that of Fe, but it is known that the Ha of this Fe--N alloy film is still large and does not exhibit soft magnetism.
発明が解決しようとする問題点
本発明は上述の問題点を解決し、窒化物特有の耐摩耗性
と金属合金よりも高い比抵抗を有し、かつ軟磁性をさほ
どそこなう事なく高い４層Ｍｓを維持する事を可能とす
るものである。Problems to be Solved by the Invention The present invention solves the above-mentioned problems, and has the wear resistance peculiar to nitrides and the resistivity higher than that of metal alloys, and has a high four-layer Ms without significantly impairing the soft magnetism. This makes it possible to maintain the
問題点を解決するための手段
本発明による磁性合金膜は、次の組成式で表わされるメ
タル−メタル系合金の窒化物から構成される。Means for Solving the Problems The magnetic alloy film according to the present invention is composed of a metal-metal alloy nitride represented by the following compositional formula.
ＴＭＮ ・・・・・・・・・・・・・・・・
・川・・・・（１） ｙ ｚ
ただし
ＴはＦ ｅ 、 Ｃｏ 、 Ｎｉ 、Ｍｎから選ばれた
１種もしくは２種以上の金属。TMN ・・・・・・・・・・・・・・・・・・
- River... (1) y z However, T is one or more metals selected from Fe, Co, Ni, and Mn.
ＭはＮｂ、Ｚｒ、Ｔｉ 、Ｔａ、Ｈｆ 、Ｃｒ、−’＋
’ｉ、Ｎｏから選ばれた１種もしくは２種以上の金属。M is Nb, Zr, Ti, Ta, Hf, Cr, -'+
One or more metals selected from 'i' and no.
Ｎは窒素
であり、ｘ、ｙ、ｚは各々 原子パーセント表し、であ
る。N is nitrogen, and x, y, and z each represent atomic percent.
作 用
（１）式で示した組成の（スパッター）合金膜は窒化物
でありながら
ｚく２０ ・・・・・・・・団・・・・・・・
・・・・・・・・・（３）である時、（１）式において
２＝０である窒化していない合金膜に比べて飽和磁化４
πＭｓの減少が少なく、又この範囲内で窒素を適当量含
有する時増加する。さらに窒化しても窒化する前の合金
膜の軟磁性が従来知られているような窒化膜と異なって
、（３）式の範囲内ではあまりそこなわれない。なお窒
化した事による耐摩性向上の効果が現われるには０．１
＜Ｚ ・・・・・・・・・・・・・・・・・
・・・・・・印・（４）である事が必要である。Although the (sputtered) alloy film having the composition shown by formula (1) is a nitride, it has the following properties:
......When (3), the saturation magnetization is 4 compared to a non-nitrided alloy film where 2 = 0 in equation (1).
πMs decreases little, and increases when a suitable amount of nitrogen is contained within this range. Furthermore, even when nitrided, the soft magnetic properties of the alloy film before nitridation are not significantly impaired within the range of formula (3), unlike conventionally known nitride films. Note that it takes 0.1 for the effect of improving wear resistance due to nitriding to appear.
<Z ・・・・・・・・・・・・・・・・・・
・・・・・・It is necessary to meet the mark (4).
又磁気特性として優れた軟磁性を得る為には６くｙ （
即ちｘ（９４） ・・・・・・・・・・・・・・・・
・・（５）である事が必要であり、磁気ヘッド用等への
応用を考えた場合４ ｒｒＭ ｓ〉５０００ Ｇ ａ
ｕ ｓ ｓである為には
７５＜ｘ （即ちｙ＜２５） ・・・・・曲・・・・
・・団・（６）である事が必要である。In addition, in order to obtain excellent soft magnetism as a magnetic property, 6 y (
That is, x (94) ・・・・・・・・・・・・・・・
... (5) is required, and when considering application to magnetic heads, etc., 4 rrM s〉5000 Ga
To be u s s, 75<x (i.e. y<25)...song...
It is necessary to be a group of (6).
又この合金膜と、窒化されていない、極めて優れた軟磁
性を示すメタル−メタル系合金膜ＴｘＭ、 （ｘ＋ｙ
＝１００のほか定義は（２）式に同じ） ・・・・・
・・・・・・・・・・・・・・・・・・・・・・（力を
交互に積層して多層膜化する事により全体として耐摩性
がよくかつ軟磁性をも有する多層膜が得られ、１層の厚
さをｔとする時、
ｔ く１０００人
でその多層膜化の効果が著しく、ＴｘＭｙＮ２部とＴｘ
Ｍア部との間の偏摩耗もほとんどなく、かつＴｘＭｙＮ
２膜部の軟磁性の改善度も犬で全体として優れた軟磁性
をも合せ持つ。In addition, this alloy film is combined with a metal-metal alloy film TxM, (x+y
= 100 and other definitions are the same as in equation (2))
・・・・・・・・・・・・・・・・・・・・・(A multilayer film that has good wear resistance as a whole and has soft magnetic properties by laminating layers alternately to form a multilayer film.) is obtained, and when the thickness of one layer is t, the effect of multilayer film formation is remarkable at 1000 people, and TxMyN2 part and Tx
There is almost no uneven wear between the M part and TxMyN.
The degree of improvement in the soft magnetism of the two film parts also provides excellent soft magnetism as a whole.
すなわち、窒化する事により多少そこなわれる軟磁気特
性も（７）式で表わされ（５） ＋ （６）の組成範囲
の、優れた軟磁気特性を有する事が知られているメタル
−メタル系合金膜（ＵＳＰ−４，４３７，９１２）と交
互に重ねて多層膜化する事により改善され得る。In other words, the soft magnetic properties that are somewhat impaired by nitriding are expressed by equation (7), and metal-metal metals that are known to have excellent soft magnetic properties in the composition range of (5) + (6) This can be improved by forming a multilayer film by alternately stacking the alloy film (USP-4,437,912).
実施例
〈実施例−１〉
ＣＯａ ｓ Ｎ ｂ １ｏ Ｚ ｒ ｓ なる組成ノ
ターゲノトヲ用い、Ａｒ中にＮ２を０．１〜５０係混合
したガスを用いて反応スパッター法により厚さ１μｍの
窒化膜を作成した。比較の為、Ｆ ＠ ＋ Ｆ ｅ ａ
ｏ Ｂ ２ｏなる組成のターゲットを同じ条件でスパ
ッターしこれらの窒化膜を作成し、特性の比較を行なっ
た結果を第１図に示す。同図のデータよりわかるように
、本発明合金Ｃｏ−Ｎｂ−Ｚｒ−Ｎ は窒化によっても
その軟磁性が比較的劣化しにくく、かつ４層Ｍ、は窒化
によって減少しないばかりか、むしろｘ＝１０％で極大
を示し、微かながらこの付辺で増大を示す事がわかった
。Example <Example-1> A nitride film with a thickness of 1 μm was created by a reactive sputtering method using a gas mixture of 0.1 to 50% N2 in Ar using a composition notarge of COa s N b 1 o Z rs did. For comparison, F @ + Fe a
These nitride films were formed by sputtering using a target having the composition o B 2o under the same conditions, and the characteristics were compared. The results are shown in FIG. As can be seen from the data in the same figure, the soft magnetic properties of the alloy Co-Nb-Zr-N of the present invention are relatively hard to deteriorate even by nitriding, and the number of four layers M is not reduced by nitriding, but is rather %, and it was found that there was a slight increase around this area.
第２図に示した分析結果とこのデータとの比較により、
膜幅にＮを約２０％以下含むものはＨｃも比較的小さく
又４πＭｓも減少せず、磁気ヘッド用軟磁性合金として
有望であることがわかる。By comparing this data with the analysis results shown in Figure 2,
It can be seen that those containing about 20% or less of N in the film width have a relatively small Hc and no decrease in 4πMs, and are promising as soft magnetic alloys for magnetic heads.
これに反し、メタル−メタロイド系のものは第１図に示
したＦａ −Ｂ−Ｎのデータからもわかるように、窒化
により４層Ｍ、が比較的早く減少する擾１か、本発明の
Ｃｏ−Ｎｂ−Ｚｒ−Ｎの場合と比較して窒化によるＨｃ
の増大も大きい。又Ｆｅの窒化膜Ｆｅ−Ｎはある窒素含
有量に対しＦｅ膜よりもむしろ４層Ｍｓが増加するもの
の、ＨＣが極めて犬きく軟磁性体としては実用的でない
。On the other hand, as can be seen from the data of Fa-B-N shown in Fig. 1, metal-metalloid-based materials are either 1 or 1, in which the four layers M are reduced relatively quickly by nitriding, or Co of the present invention. -Hc due to nitriding compared to the case of Nb-Zr-N
The increase is also large. Further, although the Fe nitride film Fe--N increases the number of four layers Ms rather than the Fe film for a certain nitrogen content, the HC is extremely high and it is not practical as a soft magnetic material.
〈実施例−２〉
実施例１と同じターゲットを用い、スパッター中に１定
時間間隔をおいてＡｒガス中にＮ２ガスを１０％混合す
る事により、Ｃｏ−Ｎｂ−ＺｒとＣｏ−Ｎｂ−Ｚｒ−Ｎ
の多層膜を作成した。このＮ２ガスを混合してスパッタ
ーする時間を変化させる事により、Ｃｏ−Ｎｂ−Ｚｒ−
Ｎ膜の膜厚ｔを変化させた、又Ｎ２混合スパッタ一時間
と非混合スパッタ一時間を等しくする事により、Ｃｏ−
Ｎｂ−Ｚｒ膜の膜厚ｔ′はほぼｔと等しくなるようにし
たく厳密にはわずかながらｔ’ ＞ ｔ である）。得
られた多層膜の総厚は約１２／７ｍとなるようにして、
作成した多試料２：を勺２８００人、 ｔ’ ” ３
２００人、 ｎ＝ ４０試料３：１〜１０００人、
ｔＩ対 １０００人、ｎ＝１２０試料４：ｔタ ５００
人 １／寓 ３００人、 ｎ＝ ４００試料５：ｔ
タ １００人 １／夕 １００人、ｎ＝１２００これら
の多層膜をもう１枚の基板でサンドイッチして接着し、
多層膜側面がテープ渭動面となるように磁気へラドチッ
プ形状に加工し市販のＶＴＲデツキに取付け、テープを
１００時間走行させた後のテープ摺動面の偏摩耗を調べ
た。窒化膜部は窒化されていない膜部よりも耐摩耗性が
ある為、第３図に示したような偏摩耗Δｌが生ずる。こ
のΔｅを多層膜の１層の膜厚ｔの関数として第３図に示
した。又作成した多層膜のＨａもｔの関数として同図に
示した。実験結果よりもｔの減少とともにΔ（１，Ｈａ
とも減少しｔく１０００人でその効果が著しい事がわか
った。<Example-2> Using the same target as in Example 1, Co-Nb-Zr and Co-Nb-Zr were mixed by mixing 10% N2 gas in Ar gas at one fixed time interval during sputtering. -N
A multilayer film was created. By mixing this N2 gas and changing the sputtering time, Co-Nb-Zr-
Co-
The thickness t' of the Nb-Zr film should be approximately equal to t; strictly speaking, t'> t, albeit slightly). The total thickness of the obtained multilayer film was about 12/7 m,
Created multiple samples 2: 2,800 people, t' ” 3
200 people, n=40 samples 3:1~1000 people,
tI vs. 1000 people, n=120 Sample 4: tT 500
Person 1/300 people, n=400 Sample 5:t
100 people 1/evening 100 people, n=1200 These multilayer films were sandwiched with another substrate and bonded.
The tape was processed into a magnetic helad chip shape so that the side surface of the multilayer film became the sliding surface of the tape, and was attached to a commercially available VTR deck, and uneven wear on the sliding surface of the tape was examined after running the tape for 100 hours. Since the nitride film portion is more wear resistant than the non-nitrided film portion, uneven wear Δl as shown in FIG. 3 occurs. This Δe is shown in FIG. 3 as a function of the thickness t of one layer of the multilayer film. The figure also shows the Ha of the produced multilayer film as a function of t. From the experimental results, as t decreases, Δ(1, Ha
It was found that the effect was significant after 1,000 people.
〈実施例−３〉
各種合金ターゲットを用い、種々の（Ａ ｒ ＋ Ｎ２
）混合ガス中でスパッターし合金膜を作成し、それら
の膜の緒特性を比較した。なお合金膜は熱膨張係数σが
約１２０の水冷したガラス基板上にｒｆ２頂スパッター
装置を用い投入電力３６０Ｗ、ガス圧ｌＸ１０ Ｔｏ
ｒｒで形成した。結果を以下の表に示す。Ｎ２分圧０．
１チでも硬度は上昇する事がわかった。<Example-3> Using various alloy targets, various (A r + N2
) Alloy films were created by sputtering in a mixed gas, and the properties of these films were compared. The alloy film was deposited on a water-cooled glass substrate with a thermal expansion coefficient σ of approximately 120 using an RF2 top sputtering device with an input power of 360 W and a gas pressure of 1×10 To
Formed with rr. The results are shown in the table below. N2 partial pressure 0.
It was found that the hardness increases even with just 1 inch.
〈実施例−４〉
本発明多層合金膜をＡｒ中のＮ２混合比が０と１０４の
間で一定時間間隔で変化させ１層の膜厚約３００人のも
のを４００層重ねて総厚１２μｍとし実施例２と同様の
実験を行なった。結果を以下に示す。<Example-4> The multilayer alloy film of the present invention was prepared by changing the mixing ratio of N2 in Ar at regular intervals between 0 and 104, and stacking 400 layers of approximately 300 layers each with a total thickness of 12 μm. An experiment similar to Example 2 was conducted. The results are shown below.
ただし表中において単層膜とは、比較のためＮ２ガス混
合比を０％と１０チに固定して作成した膜厚１２μｍの
単層膜であり、摩耗量ｌは、１ｏ。However, in the table, the single-layer film is a single-layer film with a film thickness of 12 μm created by fixing the N2 gas mixing ratio to 0% and 10% for comparison, and the wear amount l is 1o.
時間走行後の総摩耗蚤であり、偏摩耗は多層膜の窒化膜
部と非窒化膜部との間に生ずるものである。This is the total wear after running for a time, and uneven wear occurs between the nitride film portion and the non-nitride film portion of the multilayer film.
多層膜化により窒化膜よりもＨａが小さく、又摩耗量は
単層の非窒化膜より少なくなっており特性が改善されて
いる事がわかる。It can be seen that the multilayer film has a smaller Ha than the nitride film, and the amount of wear is smaller than that of a single layer non-nitride film, indicating that the properties are improved.
発明の効果
本発明は磁性合金は、高い電気抵抗と高硬度を有し、か
つ窒化物でありながら窒化による飽和磁化の劣化が少な
く、逆に増加する場合もあり磁気ヘッド等の応用に適し
た軟磁性合金である。Effects of the Invention The magnetic alloy of the present invention has high electrical resistance and high hardness, and although it is a nitride, there is little deterioration of saturation magnetization due to nitriding, and on the contrary, it may increase, making it suitable for applications such as magnetic heads. It is a soft magnetic alloy.
第１図は本発明合金Ｃｏ −Ｎｂ−Ｚｒ −Ｎ と従
来例であるＦ ｅ−Ｎ 、 Ｆ ｅ−Ｂ−Ｎ 合金の
飽和磁化と抗磁力のプラズマ中のＮ２ガス混合比依存性
を示すグラフ、第２図はＮ２ガス混合比とスパッター法
で作成した膜中のＮの原子チとの相関を示すグラフ、第
３図は（Ｃｏ−Ｎｂ−Ｚ ｒ ／Ｃｏ−Ｎｂ−Ｚ ｒ
−Ｎ ） ｎ多層膜の偏摩耗蚤Δｌと抗磁力Ｈａの１層
の膜厚依存性を示すグラフである。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
プラスマ中のＮ２の４積比（ｚ）
第２図Figure 1 is a graph showing the dependence of the saturation magnetization and coercive force of the present invention alloy Co - Nb - Zr - N and the conventional example Fe-N and Fe-B-N alloys on the N2 gas mixture ratio in the plasma. , Figure 2 is a graph showing the correlation between the N2 gas mixture ratio and the N atoms in the film created by the sputtering method, and Figure 3 is a graph showing the correlation between the N2 gas mixture ratio and the N atoms in the film created by the sputtering method.
-N) It is a graph showing the dependence of the uneven wear flea Δl and the coercive force Ha on the thickness of one layer of the n multilayer film. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 4 product ratio of N2 in plasma (z) Figure 2
Claims (1)
された少なくとも１種の金属、ＭはＭｂ、Ｚｒ、Ｔｉ、
Ｔａ、Ｈｆ、Ｃｒ、Ｗ、Ｍｏより成る群から選択された
少なくとも１種の金属、ＮはＮ（窒素）であって、ｘ、
ｙ、ｚは原子パーセントを表し、それぞれ ７６≦ｘ＜９４、 ６≦ｙ＜２５、 ０．１≦ｚ＜２０、 ｘ＋ｙ＋ｚ＝１００ である。 （２）Ｔ＿ｘＭ＿ｙＮ＿ｚで示される組成より成る磁性
合金膜と、Ｔ＿ｘＭ＿ｙで示される組成より成る合金膜
とを交互に重ねた多層膜化した事を特徴とする磁性合金
膜。 ただしＴはＦｅ、Ｃｏ、Ｎｉ、Ｍｎより成る群から選択
された少なくとも１種の金属、ＭはＮｂ、Ｚｒ、Ｔｉ、
Ｔａ、Ｈｆ、Ｃｒ、Ｗ、Ｍｏより成る群から選択された
少なくとも１種の金属、Ｎは窒素であって、ｘ、ｙ、ｚ
は原子パーセントを表し、それぞれ７５≦ｘ＜９４、 ６≦ｙ＜２５、 ０．１≦ｚ≦２０、 ｘ＋ｙ＋ｚ＝１００ である。 （３）特に多層膜の１層の膜厚をｔとする時ｔ≦１００
０Å である事を特徴とする特許請求の範囲第２項記載の磁性
合金膜。[Claims] (1) A magnetic alloy film having a composition represented by the following formula. T_xM_yN_z where T is at least one metal selected from the group consisting of Fe, Co, Ni, and Mn; M is Mb, Zr, Ti,
at least one metal selected from the group consisting of Ta, Hf, Cr, W, and Mo, N is N (nitrogen), x,
y and z represent atomic percent, and are 76≦x<94, 6≦y<25, 0.1≦z<20, and x+y+z=100, respectively. (2) A magnetic alloy film characterized in that it is a multilayer film in which magnetic alloy films having a composition represented by T_xM_yN_z and alloy films having a composition represented by T_xM_y are alternately stacked. However, T is at least one metal selected from the group consisting of Fe, Co, Ni, and Mn, and M is Nb, Zr, Ti,
At least one metal selected from the group consisting of Ta, Hf, Cr, W, and Mo, N is nitrogen, and x, y, z
represent atomic percent, respectively: 75≦x<94, 6≦y<25, 0.1≦z≦20, x+y+z=100. (3) In particular, when the thickness of one layer of a multilayer film is t, t≦100
3. The magnetic alloy film according to claim 2, wherein the magnetic alloy film has a thickness of 0 Å.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5405486A JPS62210607A (en) | 1986-03-12 | 1986-03-12 | Magnetic alloy film |
| DE19873707522 DE3707522A1 (en) | 1986-03-12 | 1987-03-09 | MAGNETIC NITRIDE FILM |
| US07/024,141 US4836865A (en) | 1986-03-12 | 1987-03-10 | Magnetic nitride film |
| US07/445,105 US5049209A (en) | 1986-03-12 | 1989-12-07 | Magnetic nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5405486A JPS62210607A (en) | 1986-03-12 | 1986-03-12 | Magnetic alloy film |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13460997A Division JP2856725B2 (en) | 1997-05-26 | 1997-05-26 | Method of forming soft magnetic alloy film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62210607A true JPS62210607A (en) | 1987-09-16 |
| JPH0573242B2 JPH0573242B2 (en) | 1993-10-14 |
Family
ID=12959899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5405486A Granted JPS62210607A (en) | 1986-03-12 | 1986-03-12 | Magnetic alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62210607A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6442108A (en) * | 1987-08-10 | 1989-02-14 | Hitachi Ltd | Heat-resisting magnetic film |
| JPH01127638A (en) * | 1987-11-11 | 1989-05-19 | Tohoku Tokushuko Kk | Magnetic thin film and its manufacture |
| JPH01229408A (en) * | 1988-03-09 | 1989-09-13 | Matsushita Electric Ind Co Ltd | Magnetic head |
| US4920013A (en) * | 1986-09-24 | 1990-04-24 | Hitachi, Ltd. | Magnetic Multilayer structure |
| JPH02275605A (en) * | 1989-01-26 | 1990-11-09 | Fuji Photo Film Co Ltd | Soft magnetic thin film |
| US4969962A (en) * | 1988-08-20 | 1990-11-13 | Victor Company Of Japan, Ltd. | Magnetic alloys for magnetic head |
| JPH031513A (en) * | 1989-02-08 | 1991-01-08 | Fuji Photo Film Co Ltd | Manufacture of soft magnetic thin film |
| US5034273A (en) * | 1987-04-10 | 1991-07-23 | Matsushita Electric Industrial Co., Ltd. | Nitrogen-containing magnetic alloy film |
| EP0466159A2 (en) * | 1990-07-13 | 1992-01-15 | Fuji Photo Film Co., Ltd. | Composite magnetic head |
| JPH0483321A (en) * | 1990-07-26 | 1992-03-17 | Fuji Photo Film Co Ltd | Manufacture of soft magnetic property thin film |
| US5262915A (en) * | 1990-08-23 | 1993-11-16 | Tdk Corporation | Magnetic head comprising a soft magnetic thin film of FeNiZrN having enhanced (100) orientation |
| US5589221A (en) * | 1994-05-16 | 1996-12-31 | Matsushita Electric Industrial Co., Ltd. | Magnetic thin film, and method of manufacturing the same, and magnetic head |
| US5879798A (en) * | 1989-06-14 | 1999-03-09 | Hitachi, Ltd. | Heat resistant, high saturation magnetic flux density film |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4949803A (en) * | 1972-09-18 | 1974-05-15 | ||
| JPS5494428A (en) * | 1977-12-30 | 1979-07-26 | Ibm | Amorphous metal layer |
| JPS5533093A (en) * | 1978-08-28 | 1980-03-08 | Ibm | Thin film magnetic material and method of manufacturing same |
| JPS5633453A (en) * | 1979-08-27 | 1981-04-03 | Takeshi Masumoto | Iron-base amorphous alloy having high magnetic flux density and small magnetostriction |
| JPS5827941A (en) * | 1981-08-11 | 1983-02-18 | Hitachi Ltd | Manufacture of amorphous thin film |
| JPS58147538A (en) * | 1982-02-25 | 1983-09-02 | Hiroyasu Fujimori | Sputtered amorphous magnetic material and its manufacture |
| JPS60220913A (en) * | 1984-04-18 | 1985-11-05 | Sony Corp | Magnetic thin film |
| US5049209A (en) * | 1986-03-12 | 1991-09-17 | Matsushita Electric Industrial Co., Ltd. | Magnetic nitride film |
| JPH0456110A (en) * | 1990-06-22 | 1992-02-24 | Toshiba Corp | External cooling device for transformer |
-
1986
- 1986-03-12 JP JP5405486A patent/JPS62210607A/en active Granted
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4949803A (en) * | 1972-09-18 | 1974-05-15 | ||
| JPS5494428A (en) * | 1977-12-30 | 1979-07-26 | Ibm | Amorphous metal layer |
| JPS5533093A (en) * | 1978-08-28 | 1980-03-08 | Ibm | Thin film magnetic material and method of manufacturing same |
| JPS5633453A (en) * | 1979-08-27 | 1981-04-03 | Takeshi Masumoto | Iron-base amorphous alloy having high magnetic flux density and small magnetostriction |
| JPS5827941A (en) * | 1981-08-11 | 1983-02-18 | Hitachi Ltd | Manufacture of amorphous thin film |
| JPS58147538A (en) * | 1982-02-25 | 1983-09-02 | Hiroyasu Fujimori | Sputtered amorphous magnetic material and its manufacture |
| JPS60220913A (en) * | 1984-04-18 | 1985-11-05 | Sony Corp | Magnetic thin film |
| US5049209A (en) * | 1986-03-12 | 1991-09-17 | Matsushita Electric Industrial Co., Ltd. | Magnetic nitride film |
| JPH0456110A (en) * | 1990-06-22 | 1992-02-24 | Toshiba Corp | External cooling device for transformer |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4920013A (en) * | 1986-09-24 | 1990-04-24 | Hitachi, Ltd. | Magnetic Multilayer structure |
| US5034273A (en) * | 1987-04-10 | 1991-07-23 | Matsushita Electric Industrial Co., Ltd. | Nitrogen-containing magnetic alloy film |
| JPS6442108A (en) * | 1987-08-10 | 1989-02-14 | Hitachi Ltd | Heat-resisting magnetic film |
| JPH01127638A (en) * | 1987-11-11 | 1989-05-19 | Tohoku Tokushuko Kk | Magnetic thin film and its manufacture |
| JPH01229408A (en) * | 1988-03-09 | 1989-09-13 | Matsushita Electric Ind Co Ltd | Magnetic head |
| US4969962A (en) * | 1988-08-20 | 1990-11-13 | Victor Company Of Japan, Ltd. | Magnetic alloys for magnetic head |
| JPH0744108B2 (en) * | 1989-01-26 | 1995-05-15 | 富士写真フイルム株式会社 | Soft magnetic thin film |
| JPH02275605A (en) * | 1989-01-26 | 1990-11-09 | Fuji Photo Film Co Ltd | Soft magnetic thin film |
| JPH031513A (en) * | 1989-02-08 | 1991-01-08 | Fuji Photo Film Co Ltd | Manufacture of soft magnetic thin film |
| JPH0744123B2 (en) * | 1989-02-08 | 1995-05-15 | 富士写真フイルム株式会社 | Method for manufacturing soft magnetic thin film |
| US5879798A (en) * | 1989-06-14 | 1999-03-09 | Hitachi, Ltd. | Heat resistant, high saturation magnetic flux density film |
| EP0466159A2 (en) * | 1990-07-13 | 1992-01-15 | Fuji Photo Film Co., Ltd. | Composite magnetic head |
| US5227940A (en) * | 1990-07-13 | 1993-07-13 | Fuji Photo Film Co., Ltd. | Composite magnetic head |
| JPH0483321A (en) * | 1990-07-26 | 1992-03-17 | Fuji Photo Film Co Ltd | Manufacture of soft magnetic property thin film |
| US5262915A (en) * | 1990-08-23 | 1993-11-16 | Tdk Corporation | Magnetic head comprising a soft magnetic thin film of FeNiZrN having enhanced (100) orientation |
| US5589221A (en) * | 1994-05-16 | 1996-12-31 | Matsushita Electric Industrial Co., Ltd. | Magnetic thin film, and method of manufacturing the same, and magnetic head |
| US5849400A (en) * | 1994-05-16 | 1998-12-15 | Matsushita Electric Industrial Co., Ltd. | Magnetic thin film, and method of manufacturing the same, and magnetic head |
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| Publication number | Publication date |
|---|---|
| JPH0573242B2 (en) | 1993-10-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |