JPS6220687B2 - - Google Patents

Info

Publication number
JPS6220687B2
JPS6220687B2 JP60056908A JP5690885A JPS6220687B2 JP S6220687 B2 JPS6220687 B2 JP S6220687B2 JP 60056908 A JP60056908 A JP 60056908A JP 5690885 A JP5690885 A JP 5690885A JP S6220687 B2 JPS6220687 B2 JP S6220687B2
Authority
JP
Japan
Prior art keywords
copper
soaking
tube
ppm
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60056908A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60258918A (ja
Inventor
Isao Sakashita
Nobuo Kimura
Teruyasu Tamamizu
Hidekazu Taji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP60056908A priority Critical patent/JPS60258918A/ja
Publication of JPS60258918A publication Critical patent/JPS60258918A/ja
Publication of JPS6220687B2 publication Critical patent/JPS6220687B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
JP60056908A 1985-03-20 1985-03-20 ガス不透過性半導体製造用ＳｉＣ−Ｓｉ系均熱管の製造方法 Granted JPS60258918A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60056908A JPS60258918A (ja) 1985-03-20 1985-03-20 ガス不透過性半導体製造用ＳｉＣ−Ｓｉ系均熱管の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60056908A JPS60258918A (ja) 1985-03-20 1985-03-20 ガス不透過性半導体製造用ＳｉＣ−Ｓｉ系均熱管の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9823075A Division JPS5222477A (en) 1975-08-13 1975-08-13 Sic-si type equalizing tube for manufacturing gas impermeable semi conductors

Publications (2)

Publication Number Publication Date
JPS60258918A JPS60258918A (ja) 1985-12-20
JPS6220687B2 true JPS6220687B2 (enrdf_load_html_response) 1987-05-08

Family

ID=13040552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60056908A Granted JPS60258918A (ja) 1985-03-20 1985-03-20 ガス不透過性半導体製造用ＳｉＣ−Ｓｉ系均熱管の製造方法

Country Status (1)

Country Link
JP (1) JPS60258918A (enrdf_load_html_response)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5075600A (enrdf_load_html_response) * 1973-11-08 1975-06-20
US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
JPS5222477A (en) * 1975-08-13 1977-02-19 Toshiba Ceramics Co Ltd Sic-si type equalizing tube for manufacturing gas impermeable semi conductors
JPS5722914A (en) * 1980-07-16 1982-02-06 Nissan Motor Co Ltd Engine mount for auto-vehicle
JPS5745708A (en) * 1980-09-03 1982-03-15 Hitachi Ltd Amplifying circuit

Also Published As

Publication number Publication date
JPS60258918A (ja) 1985-12-20

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