JPS62204355U - - Google Patents

Info

Publication number
JPS62204355U
JPS62204355U JP9266486U JP9266486U JPS62204355U JP S62204355 U JPS62204355 U JP S62204355U JP 9266486 U JP9266486 U JP 9266486U JP 9266486 U JP9266486 U JP 9266486U JP S62204355 U JPS62204355 U JP S62204355U
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
mesa
mes
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9266486U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9266486U priority Critical patent/JPS62204355U/ja
Publication of JPS62204355U publication Critical patent/JPS62204355U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の断面図、第2図a
〜cは本考案の一実施例の製造方法を説明する為
の工程順に示した半導体チツプの断面図である。 1…GaAs基板、2…メサ部、3…絶縁膜、
4…外部取出し電極、5…ホトレジスト膜。
Figure 1 is a sectional view of an embodiment of the present invention, Figure 2a
-c are cross-sectional views of a semiconductor chip shown in order of steps for explaining a manufacturing method according to an embodiment of the present invention. 1... GaAs substrate, 2... Mesa part, 3... Insulating film,
4... External lead-out electrode, 5... Photoresist film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] GaAs基板上にメサ状に形成されたアクテイ
ブ層を有するMES型電界効果トランジスタにお
いて、前記メサ部以外の部分は基板よりも低い誘
電率を有する絶縁物で埋められメサ部と同一平面
を形成していることを特徴とするMES型電界効
果トランジスタ。
In an MES type field effect transistor having an active layer formed in a mesa shape on a GaAs substrate, a portion other than the mesa portion is filled with an insulating material having a lower dielectric constant than the substrate, and is flush with the mesa portion. A MES field effect transistor characterized by:
JP9266486U 1986-06-17 1986-06-17 Pending JPS62204355U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9266486U JPS62204355U (en) 1986-06-17 1986-06-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9266486U JPS62204355U (en) 1986-06-17 1986-06-17

Publications (1)

Publication Number Publication Date
JPS62204355U true JPS62204355U (en) 1987-12-26

Family

ID=30954569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9266486U Pending JPS62204355U (en) 1986-06-17 1986-06-17

Country Status (1)

Country Link
JP (1) JPS62204355U (en)

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