JPS62203336A - Semiconductor element manufacturing apparatus - Google Patents
Semiconductor element manufacturing apparatusInfo
- Publication number
- JPS62203336A JPS62203336A JP4594486A JP4594486A JPS62203336A JP S62203336 A JPS62203336 A JP S62203336A JP 4594486 A JP4594486 A JP 4594486A JP 4594486 A JP4594486 A JP 4594486A JP S62203336 A JPS62203336 A JP S62203336A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- heater
- wafer
- growth
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 238000001947 vapour-phase growth Methods 0.000 claims abstract description 17
- 235000012431 wafers Nutrition 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 abstract description 10
- 238000007664 blowing Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、常圧式気相成長装置に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to an atmospheric pressure vapor phase growth apparatus.
従来、この種の常圧式気相成長装置はウェハーの搬送路
内に一つ若しくは連続した複数のガスヘッドを設け、ガ
スヘッドの真下にウェハーを一定温度に加熱するヒータ
ーを設け、ヒーターで加熱したウェハーにガスヘッドか
らガスを吹き付けることによりウェハー上に必要な気相
成長を行っていた。Conventionally, this type of atmospheric pressure vapor phase growth apparatus has one or multiple gas heads in series in the wafer transport path, and a heater that heats the wafer to a constant temperature directly below the gas head. The necessary vapor phase growth was performed on the wafer by blowing gas onto the wafer from a gas head.
上述した従来の常圧式気相成長装置は、一つもしくは連
続した複数のガスヘッド下のヒーターによりウェハ一温
度を一定に保ち、気相成長を行っていたが、ガスヘッド
が一つもしくは連続したものであったため、ヒーターに
よる温度設定やガス種類を種々変更してこれらの組合せ
により多段階の気相成長の条件設定を行うことは不可能
であり、成長条件の設定が限られてしまうという欠点が
あった・
本発明の目的は多段階の気相成長の条件設定を可能なら
しめた常圧式気相成長装置を提供することにある。The conventional atmospheric-pressure vapor phase growth apparatus described above uses a heater under one or a series of gas heads to maintain a constant wafer temperature and performs vapor phase growth. Therefore, it is impossible to set the conditions for multi-stage vapor phase growth by changing the temperature setting by the heater and the type of gas by various combinations of these, and the drawback is that the settings for the growth conditions are limited. An object of the present invention is to provide an atmospheric pressure vapor phase growth apparatus that allows setting of conditions for multi-stage vapor phase growth.
本発明はウェハーを加熱するヒーターと、ヒーターで加
熱されたウェハーに気相成長用ガスを吹き付けるガスヘ
ッドとを備えた半導体素子の製造装置において、個々に
独立した複数個のガスヘッドを有し、これらガスヘッド
を前後に一定間隔で配設し、各ガスヘッドの真下及び前
段の予熱部にウェハー加熱用ヒーターをそれぞれ個別に
配置したことを特徴とする半導体素子の製造装置である
。The present invention provides a semiconductor device manufacturing apparatus equipped with a heater that heats a wafer and a gas head that sprays vapor phase growth gas onto the wafer heated by the heater, which includes a plurality of individually independent gas heads, This semiconductor device manufacturing apparatus is characterized in that these gas heads are arranged at regular intervals in the front and back, and heaters for heating wafers are individually arranged directly below each gas head and in a preheating section in the preceding stage.
以下、本発明の一実施例を図により説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図において、ウェハーに気相成長用ガスを吹き付け
る２個のガスヘッドｌａ、 ｌｂを前後に一定間隔で配
設し、各ガスヘッドｌａ、 ｌｂの真下にウェハ一温度
を決めるメインヒーター２ｂ、 ２ｄをそれぞれ設置す
るとともに、前段の予熱部に予熱用ヒーター２ａ、 ２
ｅをそれぞれ設置し、さらに各ヒーター２ａ、２ｂ、２
ｃ、Ｚｄ上にウェハー支持用トレー３をガスヘッドｌａ
、 ｌｂの真下に通して移動可能に設ける。In Fig. 1, two gas heads la and lb are arranged at regular intervals in the front and back for spraying vapor phase growth gas onto the wafer, and directly below each gas head la and lb are main heaters 2b and 2b, which determine the wafer temperature. 2d, and preheating heaters 2a and 2 are installed in the preheating section of the previous stage.
e respectively, and each heater 2a, 2b, 2
c, place the wafer support tray 3 on the gas head la
, is movably provided so as to pass directly under the lb.
本発明をカバーパシベーション膜成長用常圧式気相成長
装置として用いた例につき説明する。第２図はウェハー
縦断面図である。４はシリコン基板、６はスパッタリン
グによる配線用アルミ、５はアルミ下地の拡散層である
。アルミのスパッタリング時の温度は一般的に約り５０
℃〜約４００℃とされている。リン濃度の管理が必要な
ＰＳＧ膜８はアルミスパッタリング時の温度と同等又は
それ以上の成長温度が要求されるので、アルミ６上にＰ
ＳＧｌ（！４８を直接成長させると、アルミのヒーロッ
クが発生しＰＳＧ膜８上に凹凸を生じさせる原因となる
。An example in which the present invention is used as an atmospheric pressure vapor phase growth apparatus for growing a cover passivation film will be described. FIG. 2 is a longitudinal cross-sectional view of the wafer. 4 is a silicon substrate, 6 is aluminum for wiring formed by sputtering, and 5 is a diffusion layer on an aluminum base. The temperature during sputtering of aluminum is generally about 50℃.
℃ to about 400℃. PSG film 8, which requires control of phosphorus concentration, requires a growth temperature equal to or higher than that during aluminum sputtering, so PSG film 8 is grown on aluminum 6.
If SGl(!48) is grown directly, aluminum hillocks will occur, causing unevenness on the PSG film 8.
そこで５本発明は各ヒーター２ａ、２ｂ、２ｃ、２ｄに
より第３図に示すような装置温度条件を設定する。そし
て、まずウェハーをトレー３に支持させて第１段の予熱
用ヒーター２ａにてウェハーを予熱した後、そのウェハ
ーをメインヒーター２ｂで約３００℃に加熱し、このウ
ェハーに第１段のガスヘッドｌａから気相成長用ガスを
吹き付けて薄い５ｉｎ２膜７を成長させる。その後、
ＳｉＯ□膜７を成長させたウェハーをトレー３により後
段の予熱用ヒーター２ｃに送り込んでこれを予熱し、そ
のウェハーをメインヒーター２ｄで約４００℃に加熱し
、このウェハーに第２段のガスヘッド１ｂから気相成長
用ガスを吹き付けてＰＳＧ膜８を成長させることにより
気相成長を完了させる。本発明によれば、薄いＳｉｎ、
膜７によりアルミのヒーロック成長は抑えられ、ＰＳＧ
膜８は平坦な形状に形成される。Therefore, in the present invention, device temperature conditions as shown in FIG. 3 are set by each heater 2a, 2b, 2c, and 2d. First, the wafer is supported on the tray 3 and preheated by the first stage preheating heater 2a, and then heated to about 300°C by the main heater 2b. A thin 5 inch 2 film 7 is grown by blowing vapor growth gas from la. after that,
The wafer on which the SiO□ film 7 has been grown is sent to the downstream preheating heater 2c using the tray 3 to preheat it, and the wafer is heated to about 400°C by the main heater 2d. The vapor phase growth is completed by blowing a vapor phase growth gas from 1b to grow the PSG film 8. According to the present invention, thin Sin,
Film 7 suppresses the growth of aluminum heelock, resulting in PSG
The membrane 8 is formed into a flat shape.
尚、実施例では、前後段のガスヘッドｌａ、 ｌｂと予
熱及びメインヒーター２ａ、２ｂ、２ｃ、２ｄを組とし
。In the embodiment, the front and rear gas heads la and lb are combined with preheating and main heaters 2a, 2b, 2c, and 2d.
これを−組設置した例を示したが、複数組設置しても良
いことは言うまでもない。Although an example is shown in which two sets of these are installed, it goes without saying that multiple sets may be installed.
以上説明した様に本発明は、複数の独立したガスヘッド
をトレー移動方向に対して距離的に一定間隔を持たせて
設置し、独立したヒーターを有効な位置に設けることに
より、温度設定やガス種類の組合せを変更して多段階の
気相成長の条件設定を行うことができる効果を有するも
のである。As explained above, the present invention has a plurality of independent gas heads installed at regular intervals in the direction of tray movement, and independent heaters installed at effective positions. This has the effect that the conditions for multi-stage vapor phase growth can be set by changing the combination of types.
第１図は本発明の一実施例を示す縦断面図、第２図はウ
ェハー上にカバーパシベーション膜を成長させたときの
ウェハーの縦断面図、第３図は第２図に示すウェハーの
気相成長を行う場合のトレ・一温度とヒーター位置とを
表す図である。
ｌａ、 ｌｂ・・・ガスヘッド、２ｂ、２ｄ・・・主熱
源であるメインヒーター、２ａ、２ｃ・・・予熱源であ
るプリヒーター、３・・・トレー、４・・・シリコン基
板、５・・・アルミ下地の拡散層、６・・・配線用アル
ミ、７・・・薄い５ｉｎ２膜、８・・・ＰＳＧ暎FIG. 1 is a vertical cross-sectional view showing an embodiment of the present invention, FIG. 2 is a vertical cross-sectional view of a wafer when a cover passivation film is grown on the wafer, and FIG. 3 is a vertical cross-sectional view of the wafer shown in FIG. FIG. 3 is a diagram showing the temperature of the tray and the heater position when performing phase growth. la, lb...gas head, 2b, 2d...main heater which is the main heat source, 2a, 2c...preheater which is the preheating source, 3...tray, 4...silicon substrate, 5... ... Diffusion layer on aluminum base, 6... Aluminum for wiring, 7... Thin 5in2 film, 8... PSG layer
Claims (1)
されたウェハーに気相成長用ガスを吹き付けるガスヘッ
ドとを備えた半導体素子の製造装置において、個々に独
立した複数個のガスヘッドを有し、これらガスヘッドを
前後に一定間隔で配設し、各ガスヘッドの真下及び前段
の予熱部にウェハー加熱用ヒーターをそれぞれ個別に設
置したことを特徴とする半導体素子の製造装置。(1) A semiconductor device manufacturing apparatus equipped with a heater that heats a wafer and a gas head that sprays vapor phase growth gas onto the wafer heated by the heater, which has a plurality of individually independent gas heads, A semiconductor device manufacturing apparatus characterized in that these gas heads are arranged at regular intervals in the front and back, and heaters for heating wafers are individually installed directly below each gas head and in a preheating section in the preceding stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4594486A JPS62203336A (en) | 1986-03-03 | 1986-03-03 | Semiconductor element manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4594486A JPS62203336A (en) | 1986-03-03 | 1986-03-03 | Semiconductor element manufacturing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62203336A true JPS62203336A (en) | 1987-09-08 |
Family
ID=12733385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4594486A Pending JPS62203336A (en) | 1986-03-03 | 1986-03-03 | Semiconductor element manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62203336A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0227742A (en) * | 1988-07-15 | 1990-01-30 | Fujitsu Ltd | Vapor epitaxially growing apparatus |
-
1986
- 1986-03-03 JP JP4594486A patent/JPS62203336A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0227742A (en) * | 1988-07-15 | 1990-01-30 | Fujitsu Ltd | Vapor epitaxially growing apparatus |
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