JPS62202900A - 半導体シリコンウエハ及びその製造方法 - Google Patents

半導体シリコンウエハ及びその製造方法

Info

Publication number
JPS62202900A
JPS62202900A JP4407786A JP4407786A JPS62202900A JP S62202900 A JPS62202900 A JP S62202900A JP 4407786 A JP4407786 A JP 4407786A JP 4407786 A JP4407786 A JP 4407786A JP S62202900 A JPS62202900 A JP S62202900A
Authority
JP
Japan
Prior art keywords
wafer
semiconductor silicon
silicon wafer
less
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4407786A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0463839B2 (enExample
Inventor
Yoshiaki Matsushita
松下　嘉明
Atsuko Kubota
敦子 窪田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP4407786A priority Critical patent/JPS62202900A/ja
Publication of JPS62202900A publication Critical patent/JPS62202900A/ja
Publication of JPH0463839B2 publication Critical patent/JPH0463839B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP4407786A 1986-03-03 1986-03-03 半導体シリコンウエハ及びその製造方法 Granted JPS62202900A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4407786A JPS62202900A (ja) 1986-03-03 1986-03-03 半導体シリコンウエハ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4407786A JPS62202900A (ja) 1986-03-03 1986-03-03 半導体シリコンウエハ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS62202900A true JPS62202900A (ja) 1987-09-07
JPH0463839B2 JPH0463839B2 (enExample) 1992-10-13

Family

ID=12681560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4407786A Granted JPS62202900A (ja) 1986-03-03 1986-03-03 半導体シリコンウエハ及びその製造方法

Country Status (1)

Country Link
JP (1) JPS62202900A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0442893A (ja) * 1990-06-07 1992-02-13 Mitsubishi Materials Corp シリコンウエーハ
US5373804A (en) * 1989-04-05 1994-12-20 Nippon Steel Corporation Single silicon crystal having low OSF density induced by oxidation and method for production thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56104799A (en) * 1980-01-22 1981-08-20 Nec Corp Production of si single crystal and device therefor
JPS58197716A (ja) * 1982-05-13 1983-11-17 Fujitsu Ltd シリコンウエハ−
JPS6097619A (ja) * 1983-11-02 1985-05-31 Hitachi Ltd 半導体製造方法
JPS60191095A (ja) * 1984-03-07 1985-09-28 Toshiba Corp シリコン単結晶体の製造方法及びその装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56104799A (en) * 1980-01-22 1981-08-20 Nec Corp Production of si single crystal and device therefor
JPS58197716A (ja) * 1982-05-13 1983-11-17 Fujitsu Ltd シリコンウエハ−
JPS6097619A (ja) * 1983-11-02 1985-05-31 Hitachi Ltd 半導体製造方法
JPS60191095A (ja) * 1984-03-07 1985-09-28 Toshiba Corp シリコン単結晶体の製造方法及びその装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5373804A (en) * 1989-04-05 1994-12-20 Nippon Steel Corporation Single silicon crystal having low OSF density induced by oxidation and method for production thereof
JPH0442893A (ja) * 1990-06-07 1992-02-13 Mitsubishi Materials Corp シリコンウエーハ

Also Published As

Publication number Publication date
JPH0463839B2 (enExample) 1992-10-13

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