JPS62202527A - 半導体基板の仕分方法 - Google Patents

半導体基板の仕分方法

Info

Publication number
JPS62202527A
JPS62202527A JP61044078A JP4407886A JPS62202527A JP S62202527 A JPS62202527 A JP S62202527A JP 61044078 A JP61044078 A JP 61044078A JP 4407886 A JP4407886 A JP 4407886A JP S62202527 A JPS62202527 A JP S62202527A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacturing
silicon wafer
less
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61044078A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0528900B2 (enExample
Inventor
Yoshiaki Matsushita
松下　嘉明
Atsuko Kubota
敦子 窪田
Yoshihiko Saito
芳彦 斉藤
Koji Ogawa
浩二 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61044078A priority Critical patent/JPS62202527A/ja
Publication of JPS62202527A publication Critical patent/JPS62202527A/ja
Publication of JPH0528900B2 publication Critical patent/JPH0528900B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP61044078A 1986-03-03 1986-03-03 半導体基板の仕分方法 Granted JPS62202527A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61044078A JPS62202527A (ja) 1986-03-03 1986-03-03 半導体基板の仕分方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61044078A JPS62202527A (ja) 1986-03-03 1986-03-03 半導体基板の仕分方法

Publications (2)

Publication Number Publication Date
JPS62202527A true JPS62202527A (ja) 1987-09-07
JPH0528900B2 JPH0528900B2 (enExample) 1993-04-27

Family

ID=12681586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61044078A Granted JPS62202527A (ja) 1986-03-03 1986-03-03 半導体基板の仕分方法

Country Status (1)

Country Link
JP (1) JPS62202527A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100777198B1 (ko) * 2006-02-15 2007-11-19 후지쯔 가부시끼가이샤 실리콘 웨이퍼의 처리 방법, 반도체 장치의 제조 방법 및웨이퍼 처리 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100777198B1 (ko) * 2006-02-15 2007-11-19 후지쯔 가부시끼가이샤 실리콘 웨이퍼의 처리 방법, 반도체 장치의 제조 방법 및웨이퍼 처리 장치

Also Published As

Publication number Publication date
JPH0528900B2 (enExample) 1993-04-27

Similar Documents

Publication Publication Date Title
JP4681063B2 (ja) 内部ゲッタリング性の改良された熱アニーリングされたウエハ
KR100957729B1 (ko) 이상적 산소 침전 실리콘 웨이퍼의 제조 방법
US4376657A (en) Method of making fault-free surface zone in semiconductor devices by step-wise heat treating
KR0139730B1 (ko) 반도체 기판 및 그 제조방법
US6641888B2 (en) Silicon single crystal, silicon wafer, and epitaxial wafer.
US20100155903A1 (en) Annealed wafer and method for producing annealed wafer
KR100741540B1 (ko) 에피텍셜 성장용 실리콘 웨이퍼와 에피텍셜 웨이퍼, 및 그제조방법
JP3381816B2 (ja) 半導体基板の製造方法
CN103003927A (zh) 硅基板的制造方法及硅基板
KR20000057350A (ko) 반도체 실리콘 에피택셜 웨이퍼 및 반도체 디바이스의 제조 방법
US6365461B1 (en) Method of manufacturing epitaxial wafer
US4193783A (en) Method of treating a silicon single crystal ingot
JPH07335657A (ja) シリコンウェーハの熱処理方法およびシリコンウェーハ
US6599816B2 (en) Method of manufacturing silicon epitaxial wafer
US6261362B1 (en) Silicon epitaxial wafer manufacturing method
KR960016219B1 (ko) 반도체 장치
JPH11204534A (ja) シリコンエピタキシャルウェーハの製造方法
JPH10223641A (ja) 半導体シリコンエピタキシャルウェーハ及び半導体デバイスの製造方法
JP4035886B2 (ja) シリコンエピタキシャルウェーハとその製造方法
JPS62202527A (ja) 半導体基板の仕分方法
JPH0463839B2 (enExample)
JPH11297704A (ja) 酸素析出物密度の評価方法
JP4715402B2 (ja) 単結晶シリコンウェーハの製造方法、単結晶シリコンウェーハ及びウェーハ検査方法
JPH023539B2 (enExample)
JP3238957B2 (ja) シリコンウェーハ

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term