JPS62197291A - In alloy brazing filler metal for assembling semiconductor device with less residual thermal strain - Google Patents
In alloy brazing filler metal for assembling semiconductor device with less residual thermal strainInfo
- Publication number
- JPS62197291A JPS62197291A JP3852486A JP3852486A JPS62197291A JP S62197291 A JPS62197291 A JP S62197291A JP 3852486 A JP3852486 A JP 3852486A JP 3852486 A JP3852486 A JP 3852486A JP S62197291 A JPS62197291 A JP S62197291A
- Authority
- JP
- Japan
- Prior art keywords
- brazing filler
- alloy brazing
- filler metal
- compsn
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005219 brazing Methods 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 229910000846 In alloy Inorganic materials 0.000 title claims abstract description 26
- 239000002184 metal Substances 0.000 title abstract description 14
- 229910052751 metal Inorganic materials 0.000 title abstract description 14
- 239000000945 filler Substances 0.000 title abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 229910052745 lead Inorganic materials 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000002844 melting Methods 0.000 abstract description 10
- 230000008018 melting Effects 0.000 abstract description 10
- 229910052709 silver Inorganic materials 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005096 rolling process Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 206010008531 Chills Diseases 0.000 description 1
- 229910001199 N alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Landscapes
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体装置の組立て（アッセンブリー）に
用いられるろう材にして、特に８１などの半導体素子を
Ｃｕ合金などで形成されたリードフレームにろう付けす
るのに用いた場合に、ろう付は後の半導体素子に残留す
る熱歪を著しく低減せしめることを可能とするＩｎ合金
ろう材に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention is a brazing material used in the assembly of semiconductor devices, and in particular is used to attach semiconductor elements such as No. 81 to lead frames made of Cu alloy or the like. The present invention relates to an In alloy brazing material that, when used for brazing, makes it possible to significantly reduce thermal strain remaining in subsequent semiconductor devices.
従来、一般に、半導体装置として、トランジスタやＩＣ
１さらにＬＳＩなどが知られているが、この中で、例え
ばＩＣは、
（ａ） ｔず、リードフレーム素材として板厚：０１
〜０．３ Ｍを有する、例えばＣｕ合金の条材を用意し
、（ｂ）上記リードフレーム素材よシブレス打抜き加工
により製造せんとするＩＣの形状に適合したリードフレ
ームを形成し、
（Ｃ） ついで、上記リードフレームの所定個所に高
純度８１などの半導体素子を、Ａｇａ−ストなどの導電
性樹脂を用いて加熱接着するか、あるいは上記半導体素
子をＡｕ−８ｉ合金ろう材などを介してす−ドフレーム
の片面にろう付けし、
（ｄ） 上記半導体素子と上記リードフレームとに渡
ってＡ、ｕ極細線などによるワイヤボンディングを施し
、
（ｅ） 引続いて、上記半導体素子、結線、および半
導体素子が取付けられた部分のリードフレームを、これ
らを保護する目的で、プラスチックで封止し、
（ｆ） 最終的に、上記リードフレームにおける相互
に連なる部分を切除してＩＣを形成する、以上（ａ）〜
（ｆ）の主要工程によって製造されている。Conventionally, transistors and ICs have generally been used as semiconductor devices.
1 Furthermore, LSI etc. are known, but among these, for example, IC is (a) t, but the lead frame material is plate thickness: 01
~0.3 M, for example, a Cu alloy strip is prepared, (b) a lead frame suitable for the shape of the IC to be manufactured is formed from the lead frame material by shivering punching, and (C) then. A semiconductor element such as high-purity 81 is heat-bonded to a predetermined location of the lead frame using a conductive resin such as Aga-st, or the semiconductor element is attached via an Au-8i alloy brazing material or the like. (d) Wire bonding is performed using ultrafine wires such as A and U across the semiconductor element and the lead frame; (e) Subsequently, the semiconductor element, the wiring, and the semiconductor are bonded to one side of the lead frame; The parts of the lead frame where the elements are attached are sealed with plastic for the purpose of protecting them, and (f) finally, the interconnected parts of the lead frame are cut out to form an IC. a)～
It is manufactured by the main process of (f).
このように半導体装置の製造に際し、半導体素子のリー
ドフレームへの接合に、ＡｇスーストやＡｕ−３ｉ合金
ろう材が結合材として使用されているが、これらの結合
材は、主要成分がＡｕやＡｇで構成されているだめに高
価にならざるを得す、一方半導体装置の低コスト化に対
する要求は、近年増々厳しく々るのが現状であり、前記
結合材においても、より安価な材料の開発が強く望まれ
ている。In this way, when manufacturing semiconductor devices, Ag soust and Au-3i alloy brazing materials are used as bonding materials to bond semiconductor elements to lead frames, but these bonding materials contain Au and Ag as the main components. On the other hand, the demand for lower costs for semiconductor devices has become increasingly severe in recent years, and the development of cheaper materials for the above-mentioned bonding materials is also required. Highly desired.
かかることから、半導体装置の組立て用ろう材として、
ＡｇバーストやＡｕ−８ｉ合金に比して安価な、Ａｇ：
０．５〜１０％、
Ｐｂ：２０〜５０％、
を含有し、残りが釦と不可避不純物からなる組成（以上
重量％、以下チは重量％を示す）を有するＩｎ合金を用
いる試みもなされたが、このＩｎ合金ろう材を用いた場
合、半導体素子とリードフレームとの間に存在する熱膨
張差によって、特に接合後の半導体素子には熱歪が残留
するようになり、この結果半導体素子に反シが生じ、こ
の傾向は、最近の６４ＫＤＲＡＭや２５６ＫＤＲＡＭな
どの超ＬＳＩ々どの大型の半導体装置においては顕著に
現われるものであり、信頼性に問題があることから、実
用に供することができないものである。Therefore, as a brazing material for assembling semiconductor devices,
Ag is cheaper than Ag burst and Au-8i alloy:
Attempts have also been made to use an In alloy having a composition (the above weight %, hereinafter "w") containing 0.5 to 10% Pb, 20 to 50% Pb, and the remainder consisting of buttons and unavoidable impurities. However, when this In alloy brazing material is used, due to the difference in thermal expansion that exists between the semiconductor element and the lead frame, thermal strain remains in the semiconductor element especially after bonding, resulting in damage to the semiconductor element. This tendency is noticeable in large semiconductor devices such as recent 64K DRAM and 256K DRAM such as ultra-LSIs, and due to reliability problems, they cannot be put to practical use. be.
そこで、本発明者等は、上述のような観点から、安価な
Ｉｎ合金ろう材に着目し、これの残留熱歪の低減化をは
かるべく研究を行なった結果、一般にＩｎ合金ろう材は
、通常全量で１００〜３００ ｐｐｍの不可避不純物を
含有し、かつ不可避不純物としての酸素を４０〜６０
ｐｐｍ含有するが、この不可避不純物の全含有量を５０
ｐｐｍ以下とし、かつ不可避不純物としての酸素含有量
を２０ｐｐｍ以下に低減してやると、この結果のＩｎ合
金ろう材は、すぐれたろう付は性が損なわれることなく
、ろう付は時における半導体素子とリードフレームの大
きな熱膨張差を十分に吸収する高いクリープ変形能を有
するようになり、この結果ろう付は後の半導体素子にお
ける残留熱歪は著しく少なくなるという知見を得たので
ある。Therefore, from the above-mentioned viewpoint, the present inventors focused on inexpensive In alloy brazing filler metals, and conducted research to reduce the residual thermal strain of these filler metals.In general, In alloy brazing filler metals are generally Contains 100 to 300 ppm of unavoidable impurities in total, and 40 to 60 ppm of oxygen as an unavoidable impurity.
ppm, but the total content of this unavoidable impurity was reduced to 50 ppm.
ppm or less, and by reducing the oxygen content as an unavoidable impurity to 20 ppm or less, the resulting In alloy brazing material has excellent brazing properties without loss of brazing properties, and is suitable for semiconductor devices and lead frames when brazing. It has been found that this material has a high creep deformability that can sufficiently absorb the large difference in thermal expansion, and as a result, the residual thermal strain in the semiconductor device after brazing is significantly reduced.
したがって、この発明は、上記知見にもとづいてなされ
たものであって、
Ａｇ：０．５〜１０係、
Ｐｂ：２０〜５０％、
を含有し、残シがＩｎと不可避不純物からなる組成を有
し、かつ、
不可避不純物としての酸素含有量： ２０ ｐｐｍ以下
、
不可避不純物の全含有量： ５０ ｐｐｍ以下、とした
Ｉｎ合金で構成された、残留熱歪の少ない半導体装置の
組立て用Ｉｎ合金ろう材に特徴を有するものである。Therefore, this invention has been made based on the above findings, and has a composition containing Ag: 0.5 to 10%, Pb: 20 to 50%, and the remainder consisting of In and unavoidable impurities. and, the content of oxygen as an unavoidable impurity: 20 ppm or less, and the total content of unavoidable impurities: 50 ppm or less. It has the following characteristics.
つぎに、この発明のＩｎ合金ろう材において、成分組成
範囲を上記の通シに限定した理由を説明する。Next, the reason why the composition range of the In alloy brazing material of the present invention is limited to the above range will be explained.
（ａ） Ａｇ
Ａｇ成分には、合金の融点を上げて、ろう付けに適合し
た融点をもつようにすると共に、ろう付は性を向上させ
て、強固な接合強度を確保する作用があるが、その含有
量が０５％未満では前記作用に所望の効果が得られず、
一方その含有量が１０係を越えると、融点が上がシ過ぎ
て、ろう付は時の流動性が低下し、所望のろう付けを行
なうことができ々くなることから、その含有量を０５〜
ｌＯチと定めた。(a) Ag The Ag component has the effect of raising the melting point of the alloy so that it has a melting point suitable for brazing, as well as improving brazing properties and ensuring strong joint strength. If the content is less than 0.05%, the desired effect cannot be obtained,
On the other hand, if the content exceeds 10%, the melting point will be too high and the fluidity during brazing will decrease, making it difficult to perform the desired brazing. ~
It was determined as lOchi.
（ｂ） ｐｂ
ｐｂ酸成分は、 Ａｇ成分と共存した状態で、合金の融
点を一段と上げ、ろう付けに適合した融点をもつように
するほか、薄板々どへの加工性を向上させる作用がある
が、その含有量が２０チ未満では前記作用に所望の効果
が得られず、一方その含有量が５０チを越えると、Ａｇ
成分と同様に融点が上がりすぎて流動性が低下し、ろう
付は性が悪化するようになることから、その含有量を２
０〜５０チと定めた。(b) The pb pb acid component, in coexistence with the Ag component, has the effect of raising the melting point of the alloy, making it suitable for brazing, and improving processability into thin plates. However, if the content is less than 20%, the desired effect cannot be obtained, while if the content exceeds 50%, Ag
As with the other ingredients, the melting point rises too much and the fluidity decreases, making brazing properties worse, so its content is reduced to 2.
It was set as 0 to 50.
（Ｃ）不可避不純物
上記のように、不可避不純物の全含有量、および不可避
不純物のうちの酸素含有量を低減することによって、Ｉ
ｎ合金ろう材は高いクリープ変形能をもつようになり、
この結果ろう付は後の半導体素子における残留熱歪が著
しく少なくなって、前記半導体素子に反りや割れが発生
するのが防止されるように々るが、不可避不純物の全含
有量が５０ｐｐｍを越えても、また不可避不純物として
の酸素含有量が２０ ｐｐｍを越えても、Ｉｎ合金ろう
材に高いクリープ変形能を確保することができなくなる
ことから、不可避不純物の全含有量を５０ｐｐｍ以下、
不可避不純物としての酸素含有量を２０ ｐｐｍ以下と
定めだのである。(C) Unavoidable impurities As mentioned above, by reducing the total content of unavoidable impurities and the oxygen content of unavoidable impurities, I
N-alloy filler metal now has high creep deformability,
As a result, brazing significantly reduces the residual thermal strain in the semiconductor element afterward, and prevents warping and cracking of the semiconductor element, but the total content of unavoidable impurities exceeds 50 ppm. However, even if the oxygen content as an unavoidable impurity exceeds 20 ppm, it will not be possible to ensure high creep deformability in the In alloy brazing filler metal.
The oxygen content as an unavoidable impurity is set at 20 ppm or less.
つぎに、この発明のＩｎ合金ろう材を実施例によシ説明
する。Next, the In alloy brazing material of the present invention will be explained using examples.
通常の真空溶解炉および高周波溶解炉を用い、それぞれ
第１表に示される成分組成をもった溶湯を調製し、イン
ゴットに鋳造し、これに通常の条件で圧延加工を施すこ
とによって、幅：１ｍｍＸ厚さ：０．１ｍｍの寸法をも
ったリボン状の本発明Ｉｎ合金ろう材１〜８および比較
Ｉｎ合金ろう材１〜８をそれぞれ製造した。Using a normal vacuum melting furnace and a high-frequency melting furnace, molten metal with the composition shown in Table 1 is prepared, cast into an ingot, and rolled under normal conditions to obtain a width of 1 mm. Ribbon-shaped In alloy brazing materials 1 to 8 of the present invention and comparative In alloy brazing materials 1 to 8 each having a thickness of 0.1 mm were manufactured.
々お、本発明Ｉｎ合金ろう材１〜８は、いずれも真空溶
解炉を用いて溶解し、一方、不可避不純物の含有量がこ
の発明の範囲から外れた組成を有する比較Ｉｎ合金ろう
材１〜８は、いずれも高周波溶解炉にて溶解した。The In alloy brazing materials 1 to 8 of the present invention are all melted using a vacuum melting furnace, while the comparative In alloy brazing materials 1 to 8 having compositions in which the content of unavoidable impurities is outside the scope of the present invention No. 8 was melted in a high frequency melting furnace.
ついで、この結果得られた本発明Ｉｎ合金ろう材１〜８
および比較Ｉｎ合金ろう材１〜８を用い、平面：５朋×
６Ｂ１厚さ：０．３ｍｍの寸法をもった半導体素子とし
ての８１チツプを、ＡｇメッキされたＣｕ合金（ＣＤＡ
１９４）製リードフレームにろう付けし、ろう付は後の
前記Ｓ１チツプの上面に発生した反シを表面粗さ計にて
測定すると共に、ろう付は面の剪断強度を測定した。こ
れらの測定結果を第１表に示した。Next, the resulting In alloy brazing materials 1 to 8 of the present invention
And using comparative In alloy brazing filler metals 1 to 8, plane: 5 x
6B1 thickness: 0.3 mm 81 chip as a semiconductor element is made of Ag-plated Cu alloy (CDA).
The chips were brazed to a lead frame manufactured by 194), and the cracks generated on the top surface of the S1 chip after brazing were measured using a surface roughness meter, and the shear strength of the surface was measured during brazing. The results of these measurements are shown in Table 1.
第１表に示されるように、本発明Ｉｎ合金ろう材１〜８
を用いた場合には、比較Ｉｎ合金ろう材１〜８によって
得られるろう付は強度と同等のすぐれた接合強度が確保
された状態で、Ｓｉチップに発生する反シをいずれも５
μｍ以下にすることができ、この程度の反りならば実用
上何ら問題のないものであシ、一方、これに対して比較
Ｉｎ合金ろう材１〜８の場合には、酸素含有量または不
可避不純物全含有量がこの発明の範囲を越えて多いこと
に原因して、Ｓｉチップには大きな反りが発生している
。As shown in Table 1, In alloy brazing materials 1 to 8 of the present invention
When using the comparative In alloy brazing materials 1 to 8, the brazing strength achieved with the comparative In alloy brazing materials 1 to 8 was as high as 5.
μm or less, and this degree of warping poses no practical problem.On the other hand, in the case of Comparative In alloy brazing fillers 1 to 8, the amount of oxygen content or unavoidable impurities Due to the total content exceeding the scope of this invention, large warpage occurs in the Si chip.
上述のように、この発明のＩｎ合金ろう材は、高いクリ
ープ変形能を有するので、半導体装置の組立てに際して
、ろう付は時に発生する半導体素子とリードフレーム間
の太き々熱膨張差を十分に吸収し、この結果ろう付は後
の半導体素子における残留熱歪が著しく低くなるので、
これに発生する反シがきわめて少なく、割れ発生が皆無
となるばかりでなく、接合強度および熱伝導性にもすぐ
れていることから、信頼性の高い半導体装置の製造を可
能とするものである。As mentioned above, the In alloy brazing material of the present invention has high creep deformability, so when assembling semiconductor devices, brazing can sufficiently compensate for the large thermal expansion difference that sometimes occurs between the semiconductor element and the lead frame. As a result, brazing results in significantly lower residual thermal strain in the subsequent semiconductor device.
Not only does it have very little cracking and no cracking, but it also has excellent bonding strength and thermal conductivity, making it possible to manufacture highly reliable semiconductor devices.
Claims (1)
上重量％）を有し、かつ、 不可避不純物としての酸素含有量：２０ｐｐｍ以下、 不可避不純物の全含有量：５０ｐｐｍ以下、としたＩｎ
合金で構成されたことを特徴とする残留熱歪の少ない半
導体装置の組立て用Ｉｎ合金ろう材。[Scope of Claims] Contains Ag: 0.5 to 10%, Pb: 20 to 50%, and the remainder is In and unavoidable impurities (weight %); In with oxygen content: 20 ppm or less, total content of unavoidable impurities: 50 ppm or less
An In alloy brazing material for assembling semiconductor devices with little residual thermal distortion, characterized by being made of an alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3852486A JPS62197291A (en) | 1986-02-24 | 1986-02-24 | In alloy brazing filler metal for assembling semiconductor device with less residual thermal strain |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3852486A JPS62197291A (en) | 1986-02-24 | 1986-02-24 | In alloy brazing filler metal for assembling semiconductor device with less residual thermal strain |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62197291A true JPS62197291A (en) | 1987-08-31 |
Family
ID=12527662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3852486A Pending JPS62197291A (en) | 1986-02-24 | 1986-02-24 | In alloy brazing filler metal for assembling semiconductor device with less residual thermal strain |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62197291A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020031631A1 (en) * | 2018-08-10 | 2020-02-13 | 三菱マテリアル株式会社 | Cylindrical sputtering target, in-based solder material, and method for manufacturing cylindrical target |
-
1986
- 1986-02-24 JP JP3852486A patent/JPS62197291A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020031631A1 (en) * | 2018-08-10 | 2020-02-13 | 三菱マテリアル株式会社 | Cylindrical sputtering target, in-based solder material, and method for manufacturing cylindrical target |
| JP2020026546A (en) * | 2018-08-10 | 2020-02-20 | 三菱マテリアル株式会社 | CYLINDRICAL SPUTTERING TARGET AND In-BASED SOLDER AND MANUFACTURING METHOD OF CYLINDRICAL SPUTTERING TARGET |
| CN112292474A (en) * | 2018-08-10 | 2021-01-29 | 三菱综合材料株式会社 | Cylindrical sputtering target, In-based solder material, and method for producing cylindrical sputtering target |
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