JPS62190716A - 半導体薄膜結晶層の製造方法 - Google Patents

Info

Publication number

JPS62190716A

JPS62190716A JP3179286A JP3179286A JPS62190716A JP S62190716 A JPS62190716 A JP S62190716A JP 3179286 A JP3179286 A JP 3179286A JP 3179286 A JP3179286 A JP 3179286A JP S62190716 A JPS62190716 A JP S62190716A

Authority

JP

Japan

Prior art keywords

thin film

semiconductor thin

crystal layer

region

annealed

Prior art date

1986-02-18

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

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• 239000004065 semiconductor Substances 0.000 title claims description 28
• 239000010409 thin film Substances 0.000 title claims description 26
• 239000013078 crystal Substances 0.000 title claims description 23
• 238000004519 manufacturing process Methods 0.000 title claims description 12
• 238000010894 electron beam technology Methods 0.000 claims abstract description 27
• 238000013459 approach Methods 0.000 claims abstract description 4
• 238000000137 annealing Methods 0.000 claims description 36
• 238000000034 method Methods 0.000 claims description 28
• 239000010408 film Substances 0.000 claims description 20
• 239000000758 substrate Substances 0.000 claims description 7
• 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 4
• 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
• 238000010586 diagram Methods 0.000 description 6
• 230000002093 peripheral effect Effects 0.000 description 5
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
• 229910021417 amorphous silicon Inorganic materials 0.000 description 2
• 230000000694 effects Effects 0.000 description 2
• 238000005516 engineering process Methods 0.000 description 2
• 229910052710 silicon Inorganic materials 0.000 description 2
• 239000010703 silicon Substances 0.000 description 2
• 229910052581 Si3N4 Inorganic materials 0.000 description 1
• 230000015572 biosynthetic process Effects 0.000 description 1
• 238000009826 distribution Methods 0.000 description 1
• 230000014759 maintenance of location Effects 0.000 description 1
• 238000012986 modification Methods 0.000 description 1
• 230000004048 modification Effects 0.000 description 1
• 230000001681 protective effect Effects 0.000 description 1
• 230000005855 radiation Effects 0.000 description 1
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
• 229910052814 silicon oxide Inorganic materials 0.000 description 1