JPS6219060B2 - - Google Patents
Info
- Publication number
- JPS6219060B2 JPS6219060B2 JP16765982A JP16765982A JPS6219060B2 JP S6219060 B2 JPS6219060 B2 JP S6219060B2 JP 16765982 A JP16765982 A JP 16765982A JP 16765982 A JP16765982 A JP 16765982A JP S6219060 B2 JPS6219060 B2 JP S6219060B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- wafer
- dielectric film
- present
- force
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 42
- 239000004020 conductor Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 238000001179 sorption measurement Methods 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 27
- 239000000463 material Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000010943 off-gassing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000007872 degassing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Jigs For Machine Tools (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16765982A JPS5957446A (ja) | 1982-09-28 | 1982-09-28 | 静電吸着式基板保持装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16765982A JPS5957446A (ja) | 1982-09-28 | 1982-09-28 | 静電吸着式基板保持装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5957446A JPS5957446A (ja) | 1984-04-03 |
| JPS6219060B2 true JPS6219060B2 (ko) | 1987-04-25 |
Family
ID=15853850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16765982A Granted JPS5957446A (ja) | 1982-09-28 | 1982-09-28 | 静電吸着式基板保持装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5957446A (ko) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6156842A (ja) * | 1984-08-27 | 1986-03-22 | Kokusai Electric Co Ltd | 静電吸着板 |
| JP2513995B2 (ja) * | 1985-12-29 | 1996-07-10 | 京セラ株式会社 | 静電チヤツク |
| JPS62286248A (ja) * | 1986-06-05 | 1987-12-12 | Toto Ltd | 静電チヤツク板及びその製造方法 |
| JPH0727961B2 (ja) * | 1986-06-05 | 1995-03-29 | 東陶機器株式会社 | 静電チャック板の製造方法 |
| JPH0697677B2 (ja) * | 1987-04-21 | 1994-11-30 | 東陶機器株式会社 | 静電チャック基盤の製造方法 |
| JP2600558Y2 (ja) * | 1991-10-02 | 1999-10-12 | 住友金属工業株式会社 | 静電チャック |
| US5384681A (en) * | 1993-03-01 | 1995-01-24 | Toto Ltd. | Electrostatic chuck |
| JP2002057207A (ja) * | 2000-01-20 | 2002-02-22 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウェハ保持体およびその製造方法ならびに半導体製造装置 |
| CN106910703B (zh) * | 2017-03-10 | 2020-12-01 | 京东方科技集团股份有限公司 | 载台及其制备方法、加工装置及其操作方法 |
-
1982
- 1982-09-28 JP JP16765982A patent/JPS5957446A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5957446A (ja) | 1984-04-03 |
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