JPS62188273A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法Info
- Publication number
- JPS62188273A JPS62188273A JP2931086A JP2931086A JPS62188273A JP S62188273 A JPS62188273 A JP S62188273A JP 2931086 A JP2931086 A JP 2931086A JP 2931086 A JP2931086 A JP 2931086A JP S62188273 A JPS62188273 A JP S62188273A
- Authority
- JP
- Japan
- Prior art keywords
- region
- impurity
- regions
- impurity regions
- high concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2931086A JPS62188273A (ja) | 1986-02-13 | 1986-02-13 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2931086A JPS62188273A (ja) | 1986-02-13 | 1986-02-13 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62188273A true JPS62188273A (ja) | 1987-08-17 |
JPH0573068B2 JPH0573068B2 (enrdf_load_html_response) | 1993-10-13 |
Family
ID=12272646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2931086A Granted JPS62188273A (ja) | 1986-02-13 | 1986-02-13 | 半導体装置およびその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62188273A (enrdf_load_html_response) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05121737A (ja) * | 1991-07-15 | 1993-05-18 | Nec Corp | 半導体装置の製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53118376A (en) * | 1977-03-25 | 1978-10-16 | Nec Corp | Manufacture of semiconductor device |
-
1986
- 1986-02-13 JP JP2931086A patent/JPS62188273A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53118376A (en) * | 1977-03-25 | 1978-10-16 | Nec Corp | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05121737A (ja) * | 1991-07-15 | 1993-05-18 | Nec Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0573068B2 (enrdf_load_html_response) | 1993-10-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4908681A (en) | Insulated gate field effect transistor with buried layer | |
US5355011A (en) | Insulated gate field effect transistor having LDD structure and method of making the same including a channel stop having a peak impurity concentration, the channel stop provided below a channel region | |
US8106465B2 (en) | Semiconductor device | |
US5641982A (en) | High voltage mosfet with an improved channel stopper structure | |
KR940004846A (ko) | 반도체장치 및 그 제조방법 | |
KR920017279A (ko) | Mos형 반도체장치 및 그 제조방법 | |
JPS62188273A (ja) | 半導体装置およびその製造方法 | |
JPS6123669B2 (enrdf_load_html_response) | ||
JP2727590B2 (ja) | Mis型半導体装置 | |
JPS61210673A (ja) | Mis型半導体装置 | |
US20030030105A1 (en) | Semiconductor device | |
US20030104668A1 (en) | Capacitor structure of semiconductor device and method for forming the same | |
JP3123140B2 (ja) | 電界効果トランジスタ | |
US6707119B2 (en) | Polygonal structure semiconductor device | |
JPS61177776A (ja) | 半導体装置 | |
JPH01286367A (ja) | 縦型電界効果トランジスタ | |
JPH0410227B2 (enrdf_load_html_response) | ||
JPS6320382B2 (enrdf_load_html_response) | ||
JPH02102575A (ja) | 半導体装置 | |
JPH0462975A (ja) | 半導体装置 | |
JPS62140464A (ja) | Mos型半導体装置 | |
JPH07249760A (ja) | 半導体装置の製造方法 | |
JPH03261176A (ja) | 二重拡散mosトランジスタ | |
JPS621265B2 (enrdf_load_html_response) | ||
JPS5858747A (ja) | Mos型半導体集積回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |