JPS62188272A - 静電誘導サイリスタを含む半導体装置 - Google Patents
静電誘導サイリスタを含む半導体装置Info
- Publication number
- JPS62188272A JPS62188272A JP62022904A JP2290487A JPS62188272A JP S62188272 A JPS62188272 A JP S62188272A JP 62022904 A JP62022904 A JP 62022904A JP 2290487 A JP2290487 A JP 2290487A JP S62188272 A JPS62188272 A JP S62188272A
- Authority
- JP
- Japan
- Prior art keywords
- induction thyristor
- electrostatic induction
- thyristor
- light
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000006698 induction Effects 0.000 title claims description 41
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 230000003068 static effect Effects 0.000 title claims description 7
- 230000000295 complement effect Effects 0.000 claims abstract description 4
- 230000015556 catabolic process Effects 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000013307 optical fiber Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 9
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 241000238557 Decapoda Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
- Thyristor Switches And Gates (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62022904A JPS62188272A (ja) | 1987-02-03 | 1987-02-03 | 静電誘導サイリスタを含む半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62022904A JPS62188272A (ja) | 1987-02-03 | 1987-02-03 | 静電誘導サイリスタを含む半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3607979A Division JPS55128870A (en) | 1979-03-26 | 1979-03-26 | Electrostatic induction thyristor and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62188272A true JPS62188272A (ja) | 1987-08-17 |
| JPH0230591B2 JPH0230591B2 (enrdf_load_stackoverflow) | 1990-07-06 |
Family
ID=12095627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62022904A Granted JPS62188272A (ja) | 1987-02-03 | 1987-02-03 | 静電誘導サイリスタを含む半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62188272A (enrdf_load_stackoverflow) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5296341A (en) * | 1976-02-09 | 1977-08-12 | Mitsubishi Electric Corp | Current controller |
| JPS52135277A (en) * | 1976-05-06 | 1977-11-12 | Mitsubishi Electric Corp | Electrostatic induction type thyristor |
| JPS5320885A (en) * | 1976-08-11 | 1978-02-25 | Semiconductor Res Found | Electrostatic induction type semiconductor device |
| JPS5367757U (enrdf_load_stackoverflow) * | 1976-11-10 | 1978-06-07 | ||
| JPS5383569A (en) * | 1976-12-29 | 1978-07-24 | Mitsubishi Electric Corp | Switching circuit |
| JPS5399779A (en) * | 1977-02-10 | 1978-08-31 | Handotai Kenkyu Shinkokai | Insulated gate electrostatic induction semiconductor |
-
1987
- 1987-02-03 JP JP62022904A patent/JPS62188272A/ja active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5296341A (en) * | 1976-02-09 | 1977-08-12 | Mitsubishi Electric Corp | Current controller |
| JPS52135277A (en) * | 1976-05-06 | 1977-11-12 | Mitsubishi Electric Corp | Electrostatic induction type thyristor |
| JPS5320885A (en) * | 1976-08-11 | 1978-02-25 | Semiconductor Res Found | Electrostatic induction type semiconductor device |
| JPS5367757U (enrdf_load_stackoverflow) * | 1976-11-10 | 1978-06-07 | ||
| JPS5383569A (en) * | 1976-12-29 | 1978-07-24 | Mitsubishi Electric Corp | Switching circuit |
| JPS5399779A (en) * | 1977-02-10 | 1978-08-31 | Handotai Kenkyu Shinkokai | Insulated gate electrostatic induction semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0230591B2 (enrdf_load_stackoverflow) | 1990-07-06 |
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