JPS6217856B2 - - Google Patents

Info

Publication number
JPS6217856B2
JPS6217856B2 JP54172611A JP17261179A JPS6217856B2 JP S6217856 B2 JPS6217856 B2 JP S6217856B2 JP 54172611 A JP54172611 A JP 54172611A JP 17261179 A JP17261179 A JP 17261179A JP S6217856 B2 JPS6217856 B2 JP S6217856B2
Authority
JP
Japan
Prior art keywords
wire
capillary
main pipe
gas
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54172611A
Other languages
Japanese (ja)
Other versions
JPS5694757A (en
Inventor
Yoshikyo Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sokuhan Co Ltd
Original Assignee
Tokyo Sokuhan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sokuhan Co Ltd filed Critical Tokyo Sokuhan Co Ltd
Priority to JP17261179A priority Critical patent/JPS5694757A/en
Publication of JPS5694757A publication Critical patent/JPS5694757A/en
Publication of JPS6217856B2 publication Critical patent/JPS6217856B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/786Means for supplying the connector to be connected in the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/786Means for supplying the connector to be connected in the bonding apparatus
    • H01L2224/78621Holding means, e.g. wire clampers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 本発明は半導体装置等の組立において半導体素
子の電極と外部リードとを電気良導体ワイヤで接
続するワイヤボンデイング装置に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire bonding device for connecting electrodes of a semiconductor element and external leads using electrically conductive wires in the assembly of semiconductor devices and the like.

ネールヘツド法によるワイヤボンデイングはキ
ヤピラリの先端から電気良導体のワイヤを再出さ
せキヤピラリから突き出したワイヤの先端部分を
溶融してボールを作りこのボールをキヤピラリと
ともに下降させることにより半導体のチツプの電
極上に押しつけて、チツプ側のボンデイングを行
い次いでキヤピラリを上昇させて、次のボンデイ
ング点であるリード上にキヤピラリを移動させて
ボンデイングを行うものであるが、ボンダーの高
速化にともないキヤピラリの移動に対してボール
の引き上げが追従しえずキヤピラリに密着しない
内にボンデイングを行う。この結果ボンデイング
後、他の配線層との短絡又は強度不良が発生し良
好なボンデイングが行なわれない。
Wire bonding using the nail head method involves re-extracting a wire with good electrical conductivity from the tip of a capillary, melting the tip of the wire protruding from the capillary to form a ball, and lowering this ball with the capillary to press it onto the electrode of a semiconductor chip. Then, bonding is performed on the chip side, then the capillary is raised, and the capillary is moved onto the lead, which is the next bonding point, to perform bonding. Bonding is performed before the capillary can be pulled up properly and the capillary does not come into close contact with the capillary. As a result, after bonding, short circuits with other wiring layers or poor strength occur, and good bonding cannot be performed.

このような技術的課題を解決する手段として
種々の提案がなされている。その一つとしてワイ
ヤの供給源の回転可能に支持されたスプールに巻
きつけたワイヤを引き出してキヤピラリ中に導
き、スプールとキヤピラリ間においてワイヤの横
方向からエヤーを吹付けワイヤに張力を与えてワ
イヤを送り方向と逆方向に引上げることにより、
ワイヤ端のボールをキヤピラリに密着させるもの
があり、エヤー吹付方法、ワイヤーフイーダーの
手段として各種の工夫がなされている。しかしこ
の技術はスプールの質量、エヤー吹付部分におけ
るワイヤの質量、エヤー吹付力等が振動系を構成
しており、制振作用が殆んどなく、吹付エヤーに
対してワイヤ位置が一定せずワイヤ張力変化が著
くなり、ワイヤが切断することもあつたり、キヤ
ピラリとボールが追従せず短絡不良を生じその他
張力不安定のための各種ボンデイング不良を生じ
ている。
Various proposals have been made as means for solving such technical problems. One method is to pull out a wire wound around a rotatably supported spool of a wire supply source, guide it into a capillary, and apply tension to the wire by blowing air from the side of the wire between the spool and the capillary. By pulling up in the opposite direction to the feeding direction,
There is a method in which the ball at the end of the wire is brought into close contact with the capillary, and various devices have been devised as air blowing methods and wire feeder means. However, with this technology, the mass of the spool, the mass of the wire at the air blowing part, the air blowing force, etc. constitute the vibration system, so there is almost no vibration damping effect, and the wire position is not constant with respect to the blowing air. The tension changes become significant, and the wire may break, the capillary and the ball do not follow each other, resulting in short-circuit failures, and other various bonding failures due to the unstable tension.

以上に対してキヤピラリとスプールの間に延び
るワイヤの両側近傍にそれぞれ空気軸受によつて
互いに逆方向に回転可能に支承された円筒を並列
配置して両円筒の外周によりワイヤを挾持してス
プールによりワイヤに抵抗を与えるものが考えら
れている。
In contrast to the above, cylinders supported by air bearings so as to be rotatable in opposite directions are arranged in parallel near both sides of the wire extending between the capillary and the spool, and the wire is held between the outer peripheries of both cylinders, and the wire is connected to the spool. Something that provides resistance to the wire is being considered.

この改良された技術においては単純なエヤー吹
付のような欠点は解消するが円筒が慣性力として
働きワイヤの加減速に対してワイヤを無用に附勢
する恐れがある。又空気軸受は加工精度がきびし
く、二円筒と並置するためその支承手段と共にか
なりのスペースを要する。
Although this improved technique eliminates the disadvantages of simple air blowing, the cylinder acts as an inertial force and may unnecessarily bias the wire as it accelerates or decelerates. In addition, air bearings require strict machining precision, and require a considerable amount of space along with their supporting means since they are juxtaposed with two cylinders.

本発明は以上のような問題点に鑑みてなされた
ものであつてネールヘツド法によるワイヤボンデ
イングにおいて簡潔、且つ確実にキヤピラリから
のボールの垂れ下り防止ができるワイヤボンデイ
ング装置を提供することを目的とするものであ
る。
The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a wire bonding device that can simply and reliably prevent balls from hanging down from a capillary in wire bonding using the nail head method. It is something.

本発明はスプールよりくり出したワイヤを上昇
気体流を生ずるよう分岐管を設けた本管の側に管
の内外に通ずる細口を管に沿つて設けたワイヤガ
イドの本管中を挿通させてキヤピラリに導くもの
である。
In the present invention, a wire pulled out from a spool is inserted into a main pipe of a wire guide, which has a narrow opening extending inside and outside the pipe on the side of the main pipe, which is provided with a branch pipe to generate an upward gas flow. It is something that guides.

以下図面に従つて本発明の実施例について説明
する。第1図は本発明のボンデイング装置の説明
図である。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory diagram of the bonding apparatus of the present invention.

ワイヤ1は通常金線であつて半導体素子2の電
極とリード3を結合する電路とするものであり、
固設した軸4にワイヤ1を巻付けてワイヤ1の供
給源としたスプール5が回転自在に支承されてい
る。
The wire 1 is usually a gold wire and is used as an electric path to connect the electrode of the semiconductor element 2 and the lead 3.
A spool 5, which is used as a supply source of the wire 1 by winding the wire 1 around a fixed shaft 4, is rotatably supported.

スプール5よりくり出されたワイヤ1はワイヤ
ガイド6中を挿通してワイヤ1を適時把握可能な
ワイヤクランプ7の間を通過して先端がキヤピラ
リ8を挿通して下方に出ている。キヤピラリ8は
半導体素子2、リード3上で上下可能であると共
に両者間を水平に移動可能となつており、側方よ
りワイヤ1端にボール9を溶融形成するトーチ1
0が設けられている。
The wire 1 drawn out from the spool 5 is passed through a wire guide 6, passes between wire clamps 7 which can grasp the wire 1 at a suitable time, and the tip thereof passes through a capillary 8 and comes out downward. The capillary 8 is movable up and down above the semiconductor element 2 and the leads 3, and is also movable horizontally between them.
0 is set.

第2図はワイヤガイド6の拡大縦断面図であ
る。ワイヤガイド6は本実施例ではガラスにより
作られているがこれは又他の材質、陶磁器、焼結
合金等によることもできる。
FIG. 2 is an enlarged longitudinal sectional view of the wire guide 6. Although the wire guide 6 is made of glass in this embodiment, it may also be made of other materials, such as ceramics, sintered metal, etc.

ワイヤガイド6は円筒形の本管11の側方に支
管の気体筒12が一体に設けられている。気体筒
12は本体11の側方に取付可能としてもよい。
気体筒12は図示されない気体源よりのパイプと
気体入口13において結合されている。気体筒1
2は気体入口13より傾斜して本管11に向つて
下つているがこの部分は限定されるものではなく
例えば次にのべる開口14に合せて一直線であつ
てもよい。気体筒12の本管11への開口14附
近は斜め下方より上方に向つている。開口14の
本管11における位置は本管11の下方出口18
に送入気体が流出しないよう取付角度と共に選ば
れている。開口14と相対する本管11の壁面に
は管の内外を貫通する細孔15が設けられてい
る。
The wire guide 6 has a cylindrical main pipe 11 and a branch pipe gas cylinder 12 integrally provided on the side thereof. The gas cylinder 12 may be attachable to the side of the main body 11.
The gas cylinder 12 is connected at a gas inlet 13 to a pipe from a gas source (not shown). Gas cylinder 1
2 is inclined from the gas inlet 13 and descends toward the main pipe 11, but this part is not limited, and may be in a straight line, for example, in line with the opening 14 to be described next. The vicinity of the opening 14 of the gas cylinder 12 to the main pipe 11 faces diagonally upward rather than downward. The location of the opening 14 in the main pipe 11 is the lower outlet 18 of the main pipe 11.
The mounting angle is selected to prevent the inlet gas from leaking out. The wall surface of the main pipe 11 facing the opening 14 is provided with a pore 15 that penetrates the inside and outside of the pipe.

本発明のワイヤボンデイング装置の作用は前工
程後、ワイヤクランプ7を開いてキヤピラリ8が
降下してボール9に接してボール9はワイヤ1を
引いて半導体素子2の電極にボンデイングされ
る。キヤピラリ8は続いて上昇してリード3の上
方に水平移動し下降してリード3上にボンデイン
グさせる。その後ワイヤクランプ7を閉じてキヤ
ピラリ8と共に上昇させてリード3上のボンデイ
ング近くより引張力によりワイヤ1を分断する。
以上により半導体素子2とリード3間のワイヤル
ープ16により電路が形成される。
The function of the wire bonding apparatus of the present invention is that after the pre-process, the wire clamp 7 is opened, the capillary 8 is lowered and comes into contact with the ball 9, and the ball 9 is bonded to the electrode of the semiconductor element 2 by pulling the wire 1. The capillary 8 then rises, moves horizontally above the lead 3, and descends to bond onto the lead 3. Thereafter, the wire clamp 7 is closed, the wire 1 is raised together with the capillary 8, and the wire 1 is separated by a tensile force near the bonding on the lead 3.
As described above, an electric path is formed by the wire loop 16 between the semiconductor element 2 and the lead 3.

以上のようにワイヤボンデイングが行われる際
にワイヤガイド6の気体筒12の気体入口13よ
り気体が供給される。
When wire bonding is performed as described above, gas is supplied from the gas inlet 13 of the gas cylinder 12 of the wire guide 6.

キヤピラリ8がワイヤ1端に形成されたボール
9に密接して降下するに際してワイヤ1はワイヤ
ガイド6の本管11中において気体筒12を通じ
て開口14より本管11へ噴出する気体に晒され
る。気体は本管11中にワイヤ1の送り方向に逆
らつて上昇流を生じせしめて本管11の出口17
より大気中に逃げる。本管11中を挿通するワイ
ヤ1は本管11の細口15の部分において細口1
5をとおり本管11内より大気中へ吐出する気体
により本管11内壁に張りつく方向の力を受け
る。これによると本管11中にあるワイヤ1は気
体の出口細口15側に寄せられる。本管11の下
方出口18よりは気体筒12より本管11中に送
入された気体は殆んど流れない。従つてワイヤ1
は本管11中をワイヤ1の送り方向と逆に上方へ
附勢されると共に本管11の内壁に接触して摩擦
抵抗を有しており、キヤピラリ8が下降するとき
にワイヤ1に適当な抵抗が与えられているのでボ
ール9はキヤピラリ8の先端に密接する。
When the capillary 8 descends into close contact with the ball 9 formed at the end of the wire 1, the wire 1 is exposed to gas in the main pipe 11 of the wire guide 6 which is blown into the main pipe 11 through the gas cylinder 12 through the opening 14. The gas creates an upward flow in the main pipe 11 against the feeding direction of the wire 1 and reaches the outlet 17 of the main pipe 11.
escape into the atmosphere. The wire 1 inserted through the main pipe 11 is inserted into the narrow opening 15 at the narrow opening 15 of the main pipe 11.
5 and is discharged from the inside of the main pipe 11 into the atmosphere, which causes the inner wall of the main pipe 11 to receive a force that sticks to it. According to this, the wire 1 in the main pipe 11 is brought to the gas outlet narrow port 15 side. Almost no gas fed into the main pipe 11 from the gas cylinder 12 flows through the lower outlet 18 of the main pipe 11. Therefore wire 1
is urged upward in the main pipe 11 in the opposite direction to the feeding direction of the wire 1, and also contacts the inner wall of the main pipe 11 and has frictional resistance, and when the capillary 8 descends, the wire 1 is forced to Since the resistance is applied, the ball 9 comes into close contact with the tip of the capillary 8.

ワイヤガイド6には一定圧の気体が送入されて
おりワイヤ1はその移動に対して一定の抵抗を生
ずるのでワイヤ1の張力は一定しておりワイヤル
ープ16が長くなりすぎて垂れ下つたり、ボール
がキヤピラリ端に近づかないでボンデイングされ
たりすることがなく、短絡不良を生じない。又気
体が細い本管11中を上昇するのでワイヤが振動
を生ずるおそれはなく、ワイヤ張力を急上昇させ
ることもないのでワイヤが切断されるおそれもな
い。
A constant pressure of gas is fed into the wire guide 6, and the wire 1 produces a constant resistance to its movement, so the tension on the wire 1 is constant and the wire loop 16 does not become too long and sag. In this case, the ball does not get close to the end of the capillary and is not bonded, so short circuit failure does not occur. Furthermore, since the gas rises in the thin main pipe 11, there is no risk of the wire vibrating, and since the wire tension does not increase rapidly, there is no risk of the wire being cut.

ワイヤガイド6は従来も単なるワイヤの案内と
しておかれていた位置にあり、格別に設置場所を
要せず、簡単であり故障のおそれを全く有しな
い。
The wire guide 6 is located at a position that has conventionally been placed as a mere wire guide, and does not require a special installation space, is simple, and has no risk of failure.

本発明は実施例に示された形状に限定されるも
のではなく、ワイヤガイド6の本管11の管内部
は前記実施例の円形以外に三角形、四角形、リー
ドアングルの大きな螺線形状としてもよい。又開
口14は適当な上昇流を与えるように円形のほか
四角形、末広管形等にしてもよく、開口14の方
向は本管11が円形又は螺線形状である場合斜上
方向と併せてその切線方向から気体を流入させる
ようにしてもよい。
The present invention is not limited to the shape shown in the embodiments, and the inside of the main pipe 11 of the wire guide 6 may be triangular, square, or spiral shaped with a large lead angle, in addition to the circular shape of the above embodiments. . In addition, the opening 14 may be circular, rectangular, diverging, etc. in order to provide an appropriate upward flow, and if the main pipe 11 is circular or spiral-shaped, the opening 14 may be in the diagonal upward direction as well as in the diagonal upward direction. Gas may be allowed to flow in from the tangential direction.

以上のとおり本発明のボンデイング装置によれ
ば構造簡潔で動作確実なワイヤの張力附与がなさ
れ、従つて又高速自動ボンデイング装置に適する
のみならず、従来の手動低速のボンデイング装置
におけるワイヤの張力附与にも適する。
As described above, the bonding apparatus of the present invention has a simple structure and is capable of applying tension to a wire with reliable operation, and is therefore not only suitable for high-speed automatic bonding apparatuses, but also suitable for applying tension to wires in conventional manual low-speed bonding apparatuses. Also suitable for giving.

ボンデイングは良好であり、ワイヤの破断はな
く、安定して一定張力が与えられワイヤはキヤピ
ラリに無理なく追従するので従来のような不良は
消滅し、信頼度の高い高品質の半導体素子の電極
とリード間に良好なワイヤループを得ることがで
きる。
The bonding is good, there is no breakage of the wire, a constant tension is applied stably, and the wire follows the capillary easily, eliminating the conventional defects and making it possible to use highly reliable and high quality electrodes for semiconductor devices. A good wire loop can be obtained between the leads.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明はボンデイング装置の説明図、
第2図は第1図の一部拡大図である。 1……ワイヤ、2……半導体素子、3……リー
ド、4……軸、5……スプール、6……ワイヤガ
イド、7……ワイヤクランプ、8……キヤピラ
リ、9……ボール、10……トーチ、11……本
管、12……気体筒、13……気体入口、14…
…開口、15……細孔、16……ワイヤループ、
17……出口、18……下方出口。
FIG. 1 is an explanatory diagram of a bonding device according to the present invention.
FIG. 2 is a partially enlarged view of FIG. 1. DESCRIPTION OF SYMBOLS 1... Wire, 2... Semiconductor element, 3... Lead, 4... Shaft, 5... Spool, 6... Wire guide, 7... Wire clamp, 8... Capillary, 9... Ball, 10... ...torch, 11...main pipe, 12...gas cylinder, 13...gas inlet, 14...
...opening, 15...pore, 16...wire loop,
17...exit, 18...downward exit.

Claims (1)

【特許請求の範囲】 1 半導体素子とリードとの間を細いワイヤで接
続するワイヤボンデイング装置において、スプー
ルとキヤピラリの間にワイヤの挿通するワイヤガ
イドを配し、ワイヤガイドはワイヤの挿通する管
状本管途中にワイヤの送り方向と逆方向に斜交す
る開口を備えた支管である気体筒を備えており、
該開口と相対する本管壁には管内外に通ずる細口
を備え、気体筒に気体を送入することによりワイ
ヤを送り方向と逆方向に附勢すると共に本管内壁
に張りつかせることによりワイヤに張力を附与す
ることを特徴とするワイヤボンデイング装置。 2 ワイヤガイドがガラス製である特許請求の範
囲第1項記載のワイヤボンデイング装置。
[Claims] 1. In a wire bonding device that connects a semiconductor element and a lead with a thin wire, a wire guide through which the wire is inserted is disposed between a spool and a capillary, and the wire guide is a tubular main body through which the wire is inserted. It is equipped with a gas cylinder, which is a branch pipe, with an opening diagonally in the opposite direction to the wire feeding direction, in the middle of the pipe.
The main pipe wall facing the opening is provided with a narrow opening that communicates with the inside and outside of the pipe, and by feeding gas into the gas cylinder, the wire is energized in the opposite direction to the feeding direction, and by being attached to the inner wall of the main pipe, the wire is A wire bonding device characterized by applying tension to. 2. The wire bonding apparatus according to claim 1, wherein the wire guide is made of glass.
JP17261179A 1979-12-28 1979-12-28 Wire bonding device Granted JPS5694757A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17261179A JPS5694757A (en) 1979-12-28 1979-12-28 Wire bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17261179A JPS5694757A (en) 1979-12-28 1979-12-28 Wire bonding device

Publications (2)

Publication Number Publication Date
JPS5694757A JPS5694757A (en) 1981-07-31
JPS6217856B2 true JPS6217856B2 (en) 1987-04-20

Family

ID=15945075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17261179A Granted JPS5694757A (en) 1979-12-28 1979-12-28 Wire bonding device

Country Status (1)

Country Link
JP (1) JPS5694757A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052030A (en) * 1983-08-31 1985-03-23 Toshiba Corp Wire bonding device
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method

Also Published As

Publication number Publication date
JPS5694757A (en) 1981-07-31

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