JPS6217390B2 - - Google Patents

Info

Publication number
JPS6217390B2
JPS6217390B2 JP54093595A JP9359579A JPS6217390B2 JP S6217390 B2 JPS6217390 B2 JP S6217390B2 JP 54093595 A JP54093595 A JP 54093595A JP 9359579 A JP9359579 A JP 9359579A JP S6217390 B2 JPS6217390 B2 JP S6217390B2
Authority
JP
Japan
Prior art keywords
region
fet
diffusion
monitor
upper gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54093595A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5617075A (en
Inventor
Goro Mitarai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9359579A priority Critical patent/JPS5617075A/ja
Publication of JPS5617075A publication Critical patent/JPS5617075A/ja
Publication of JPS6217390B2 publication Critical patent/JPS6217390B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP9359579A 1979-07-20 1979-07-20 Semiconductor device Granted JPS5617075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9359579A JPS5617075A (en) 1979-07-20 1979-07-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9359579A JPS5617075A (en) 1979-07-20 1979-07-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5617075A JPS5617075A (en) 1981-02-18
JPS6217390B2 true JPS6217390B2 (enExample) 1987-04-17

Family

ID=14086653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9359579A Granted JPS5617075A (en) 1979-07-20 1979-07-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5617075A (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2280203A1 (fr) * 1974-07-26 1976-02-20 Thomson Csf Procede d'ajustement de tension de seuil de transistors a effet de champ

Also Published As

Publication number Publication date
JPS5617075A (en) 1981-02-18

Similar Documents

Publication Publication Date Title
US3465427A (en) Combined transistor and testing structures and fabrication thereof
US9627280B2 (en) Methods for probing semiconductor fins through four-point probe and determining carrier concentrations
US4024561A (en) Field effect transistor monitors
US4638341A (en) Gated transmission line model structure for characterization of field-effect transistors
CN113257790A (zh) 漏电测试结构及漏电测试方法
US20040101989A1 (en) Evaluation method of semiconductor device, manufacturing method of the semiconductor device, design management system of device comprising the semiconductor device, dose amount control program for the semiconductor device, computer-readable recording medium recording the program, and dose amount control apparatus
JPH06244257A (ja) 半導体基板不純物濃度の決定方法
JPS6217390B2 (enExample)
US5010029A (en) Method of detecting the width of spacers and lightly doped drain regions
DE69027082T2 (de) Verfahren zur Herstellung eines Halbleitersubstrats mit einer dielektrischen Struktur
US10074578B2 (en) Semiconductor device and method for producing the same
JPH033943B2 (enExample)
JP4302287B2 (ja) 半導体装置の評価方法及び評価装置
JP2661641B2 (ja) 半導体の不純物分布測定方法
JPS59105375A (ja) 半導体装置
Bateman et al. MOST channel-length measurement
JPS6148927A (ja) 半導体装置
Choi et al. A test structure for monitoring micro-loading effect of MOSFET gate length
KR100206873B1 (ko) 표면 물성 검사용 반도체 장치 및 그 제조 방법
JP2004327463A (ja) ドレイン電流の計算方法および応力の計算方法
JP2001185594A (ja) ゲート絶縁膜評価方法及び装置
JPS5953702B2 (ja) 電界効果トランジスタの諸元を測定する方法
CN113363137A (zh) 一种SiGe结构载流子浓度的监控方法
JP3107681B2 (ja) リセス構造ｆｅｔのエッチング制御方法
JPS6214951B2 (enExample)