JPS62168439U - - Google Patents
Info
- Publication number
- JPS62168439U JPS62168439U JP5723386U JP5723386U JPS62168439U JP S62168439 U JPS62168439 U JP S62168439U JP 5723386 U JP5723386 U JP 5723386U JP 5723386 U JP5723386 U JP 5723386U JP S62168439 U JPS62168439 U JP S62168439U
- Authority
- JP
- Japan
- Prior art keywords
- recess
- conductivity type
- semiconductor substrate
- resistance layer
- diaphragm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Description
第１図は本考案の一実施例の断面図、第２図は
そのダイヤフラム部の応力分布図、第３図は従来
の半導体触覚センサの断面図、第４図はその半導
体基板の応力分布図、第５図は半導体触覚センサ
の等価回路図、第６図は本考案の異なる実施例の
断面図である。
１：シリコン基板、２１，２２，２３，２４：
ｐ形拡散層、５：ダイヤフラム、６，６１：フイ
ルム、７：流体。
Fig. 1 is a sectional view of an embodiment of the present invention, Fig. 2 is a stress distribution diagram of its diaphragm portion, Fig. 3 is a sectional view of a conventional semiconductor tactile sensor, and Fig. 4 is a stress distribution diagram of its semiconductor substrate. , FIG. 5 is an equivalent circuit diagram of a semiconductor tactile sensor, and FIG. 6 is a sectional view of a different embodiment of the present invention. 1: Silicon substrate, 21, 22, 23, 24:
p-type diffusion layer, 5: diaphragm, 6, 61: film, 7: fluid.
Claims (1)
続される他導電形の拡散抵抗層のピエゾ抵抗効果
を利用して接触による力を計測するものにおいて
、半導体基板の一面側の中央部に凹部を形成する
ことによつて生ずるダイヤフラムの他面側に拡散
抵抗層を備え、前記凹部の反ダイヤフラム側が可
撓性板によつて閉塞され、凹部内に流体が充填さ
れたことを特徴とする半導体触覚センサ。 A recess is formed in the center of one side of the semiconductor substrate in a device that measures contact force using the piezoresistance effect of a diffused resistance layer of a different conductivity type that is formed in a semiconductor substrate of one conductivity type and bridge-connected. A semiconductor tactile sensor characterized in that a diffusion resistance layer is provided on the other side of a diaphragm produced by this, the side of the recess opposite to the diaphragm is closed by a flexible plate, and the recess is filled with fluid. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5723386U JPS62168439U (en) | 1986-04-16 | 1986-04-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5723386U JPS62168439U (en) | 1986-04-16 | 1986-04-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62168439U true JPS62168439U (en) | 1987-10-26 |
Family
ID=30886754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5723386U Pending JPS62168439U (en) | 1986-04-16 | 1986-04-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62168439U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011065250A1 (en) * | 2009-11-25 | 2011-06-03 | アルプス電気株式会社 | Force sensor |
-
1986
- 1986-04-16 JP JP5723386U patent/JPS62168439U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011065250A1 (en) * | 2009-11-25 | 2011-06-03 | アルプス電気株式会社 | Force sensor |
| JPWO2011065250A1 (en) * | 2009-11-25 | 2013-04-11 | アルプス電気株式会社 | Force sensor |
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