JPS6216537B2 - - Google Patents
Info
- Publication number
- JPS6216537B2 JPS6216537B2 JP3502281A JP3502281A JPS6216537B2 JP S6216537 B2 JPS6216537 B2 JP S6216537B2 JP 3502281 A JP3502281 A JP 3502281A JP 3502281 A JP3502281 A JP 3502281A JP S6216537 B2 JPS6216537 B2 JP S6216537B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- heat treatment
- semiconductor device
- epitaxial layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 34
- 238000010438 heat treatment Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 9
- 230000007547 defect Effects 0.000 description 40
- 239000013078 crystal Substances 0.000 description 27
- 230000000694 effects Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 7
- 238000011282 treatment Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- -1 ion ions Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3502281A JPS57167635A (en) | 1981-03-11 | 1981-03-11 | Manufacture of semiconductor device |
| DE8282301212T DE3280219D1 (de) | 1981-03-11 | 1982-03-10 | Verfahren zur herstellung einer halbleiteranordnung mit ausgluehen eines halbleiterkoerpers. |
| EP19820301212 EP0060676B1 (en) | 1981-03-11 | 1982-03-10 | A method for the production of a semiconductor device comprising annealing a silicon wafer |
| IE55982A IE55966B1 (en) | 1981-03-11 | 1982-03-11 | A method for the production of a semiconductor device comprising annealing a silicon wafer |
| US06/598,544 US4597804A (en) | 1981-03-11 | 1984-04-12 | Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3502281A JPS57167635A (en) | 1981-03-11 | 1981-03-11 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57167635A JPS57167635A (en) | 1982-10-15 |
| JPS6216537B2 true JPS6216537B2 (US08177716-20120515-C00003.png) | 1987-04-13 |
Family
ID=12430429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3502281A Granted JPS57167635A (en) | 1981-03-11 | 1981-03-11 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57167635A (US08177716-20120515-C00003.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6251050U (US08177716-20120515-C00003.png) * | 1985-09-20 | 1987-03-30 |
-
1981
- 1981-03-11 JP JP3502281A patent/JPS57167635A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6251050U (US08177716-20120515-C00003.png) * | 1985-09-20 | 1987-03-30 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57167635A (en) | 1982-10-15 |
