JPS62162387A - 半導体レ−ザ素子の結晶成長用基板 - Google Patents

半導体レ−ザ素子の結晶成長用基板

Info

Publication number
JPS62162387A
JPS62162387A JP61314271A JP31427186A JPS62162387A JP S62162387 A JPS62162387 A JP S62162387A JP 61314271 A JP61314271 A JP 61314271A JP 31427186 A JP31427186 A JP 31427186A JP S62162387 A JPS62162387 A JP S62162387A
Authority
JP
Japan
Prior art keywords
layer
gaas
semiconductor laser
laser device
carrier concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61314271A
Other languages
English (en)
Japanese (ja)
Other versions
JPH048957B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Saburo Yamamoto
三郎 山本
Kazuhisa Murata
和久 村田
Hiroshi Hayashi
寛 林
Takuo Takenaka
卓夫 竹中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP61314271A priority Critical patent/JPS62162387A/ja
Publication of JPS62162387A publication Critical patent/JPS62162387A/ja
Publication of JPH048957B2 publication Critical patent/JPH048957B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP61314271A 1986-12-26 1986-12-26 半導体レ−ザ素子の結晶成長用基板 Granted JPS62162387A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61314271A JPS62162387A (ja) 1986-12-26 1986-12-26 半導体レ−ザ素子の結晶成長用基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61314271A JPS62162387A (ja) 1986-12-26 1986-12-26 半導体レ−ザ素子の結晶成長用基板

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4477681A Division JPS57159084A (en) 1981-03-25 1981-03-25 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS62162387A true JPS62162387A (ja) 1987-07-18
JPH048957B2 JPH048957B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-02-18

Family

ID=18051348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61314271A Granted JPS62162387A (ja) 1986-12-26 1986-12-26 半導体レ−ザ素子の結晶成長用基板

Country Status (1)

Country Link
JP (1) JPS62162387A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011114214A (ja) * 2009-11-27 2011-06-09 Mitsubishi Electric Corp 半導体レーザ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159084A (en) * 1981-03-25 1982-10-01 Sharp Corp Semiconductor laser element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159084A (en) * 1981-03-25 1982-10-01 Sharp Corp Semiconductor laser element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011114214A (ja) * 2009-11-27 2011-06-09 Mitsubishi Electric Corp 半導体レーザ装置

Also Published As

Publication number Publication date
JPH048957B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-02-18

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