JPS62158877A - Ｃｖｄ薄膜形成装置 - Google Patents

Ｃｖｄ薄膜形成装置

Info

Publication number
JPS62158877A
JPS62158877A JP110186A JP110186A JPS62158877A JP S62158877 A JPS62158877 A JP S62158877A JP 110186 A JP110186 A JP 110186A JP 110186 A JP110186 A JP 110186A JP S62158877 A JPS62158877 A JP S62158877A
Authority
JP
Japan
Prior art keywords
conical
wall surface
reaction gas
film forming
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP110186A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0532469B2 (enExample
Inventor
Katsumi Ooyama
勝美 大山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Electronics Engineering Co Ltd
Priority to JP110186A priority Critical patent/JPS62158877A/ja
Publication of JPS62158877A publication Critical patent/JPS62158877A/ja
Publication of JPH0532469B2 publication Critical patent/JPH0532469B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP110186A 1986-01-07 1986-01-07 Ｃｖｄ薄膜形成装置 Granted JPS62158877A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP110186A JPS62158877A (ja) 1986-01-07 1986-01-07 Ｃｖｄ薄膜形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP110186A JPS62158877A (ja) 1986-01-07 1986-01-07 Ｃｖｄ薄膜形成装置

Publications (2)

Publication Number Publication Date
JPS62158877A true JPS62158877A (ja) 1987-07-14
JPH0532469B2 JPH0532469B2 (enExample) 1993-05-17

Family

ID=11492092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP110186A Granted JPS62158877A (ja) 1986-01-07 1986-01-07 Ｃｖｄ薄膜形成装置

Country Status (1)

Country Link
JP (1) JPS62158877A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4993357A (en) * 1987-12-23 1991-02-19 Cs Halbleiter -Und Solartechnologie Gmbh Apparatus for atomic layer epitaxial growth

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4993357A (en) * 1987-12-23 1991-02-19 Cs Halbleiter -Und Solartechnologie Gmbh Apparatus for atomic layer epitaxial growth

Also Published As

Publication number Publication date
JPH0532469B2 (enExample) 1993-05-17

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