JPS62152123A - 気相成長装置 - Google Patents
気相成長装置Info
- Publication number
- JPS62152123A JPS62152123A JP29377385A JP29377385A JPS62152123A JP S62152123 A JPS62152123 A JP S62152123A JP 29377385 A JP29377385 A JP 29377385A JP 29377385 A JP29377385 A JP 29377385A JP S62152123 A JPS62152123 A JP S62152123A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction
- reaction gas
- reaction chamber
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims abstract description 142
- 238000006243 chemical reaction Methods 0.000 claims abstract description 103
- 238000010926 purge Methods 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 230000005855 radiation Effects 0.000 claims abstract description 7
- 239000012495 reaction gas Substances 0.000 claims description 148
- 238000001947 vapour-phase growth Methods 0.000 claims description 39
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001307 helium Substances 0.000 claims description 8
- 229910052734 helium Inorganic materials 0.000 claims description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000012071 phase Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 33
- 229910052710 silicon Inorganic materials 0.000 abstract description 33
- 239000010703 silicon Substances 0.000 abstract description 33
- 238000000034 method Methods 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 60
- 239000010453 quartz Substances 0.000 description 56
- 239000000376 reactant Substances 0.000 description 17
- 238000001816 cooling Methods 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29377385A JPS62152123A (ja) | 1985-12-26 | 1985-12-26 | 気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29377385A JPS62152123A (ja) | 1985-12-26 | 1985-12-26 | 気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62152123A true JPS62152123A (ja) | 1987-07-07 |
| JPH0545053B2 JPH0545053B2 (enrdf_load_stackoverflow) | 1993-07-08 |
Family
ID=17799009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29377385A Granted JPS62152123A (ja) | 1985-12-26 | 1985-12-26 | 気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62152123A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4920918A (en) * | 1989-04-18 | 1990-05-01 | Applied Materials, Inc. | Pressure-resistant thermal reactor system for semiconductor processing |
| JPH02136064U (enrdf_load_stackoverflow) * | 1989-04-19 | 1990-11-13 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5678497A (en) * | 1979-11-27 | 1981-06-27 | Fujitsu Ltd | Vapor growth apparatus |
-
1985
- 1985-12-26 JP JP29377385A patent/JPS62152123A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5678497A (en) * | 1979-11-27 | 1981-06-27 | Fujitsu Ltd | Vapor growth apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4920918A (en) * | 1989-04-18 | 1990-05-01 | Applied Materials, Inc. | Pressure-resistant thermal reactor system for semiconductor processing |
| JPH02136064U (enrdf_load_stackoverflow) * | 1989-04-19 | 1990-11-13 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0545053B2 (enrdf_load_stackoverflow) | 1993-07-08 |
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