JPS62145170U - - Google Patents

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Publication number
JPS62145170U
JPS62145170U JP3188486U JP3188486U JPS62145170U JP S62145170 U JPS62145170 U JP S62145170U JP 3188486 U JP3188486 U JP 3188486U JP 3188486 U JP3188486 U JP 3188486U JP S62145170 U JPS62145170 U JP S62145170U
Authority
JP
Japan
Prior art keywords
contact
contact terminals
terminal
terminals
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3188486U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3188486U priority Critical patent/JPS62145170U/ja
Publication of JPS62145170U publication Critical patent/JPS62145170U/ja
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図:本考案の前提となる集積回路の静電破
壊テストの原理を示す回路図。 1…集積回路、21,22…スイツチ、3…電
圧計、41…電圧電源、42…プログラマーコン
トローラ、43…電流源、51,52…ピン切換
装置。 第2a図:本考案による装置の全容を示す破断
側面図、第2b図:本考案による装置の全容を示
す上面図、第2c図:本考案の測定部の構成を示
す回路の概略図、第2d図:本考案の静電印加部
の構成を示す回路の概略図。 2…静電印加部、3…測定部、4…移動装置、
21…印加用接触ピン、31…測定用接触ピン、
6…ソケツト基盤、61…接触端子、7…ソケツ
ト基盤ラツク(ソケツト基盤を積載する格納不要
)。 第3a図、第3b図:接触端子を二列配列した
実施例の平面図、第4a図、第4b図:印加用接
触ピンを移動し接触端子を連続する機構の実施例
を示す側面図、第5a図、第5b図:接触端子を
一列に配列すると共に二列のグランドピンを並設
した実施例の平面図、62:グランドピン。 第6a図、第6b図:一列の接触端子を両側に
配側し、かつこれに対応して二列のグランドピン
を並設させた実施例の上面図、側面図、第7図:
第6図の実施例に使用するために、2個の印加用
接触ピンの何れかを使用した実施例を示す側面図
FIG. 1: A circuit diagram showing the principle of electrostatic damage testing for integrated circuits, which is the premise of the present invention. DESCRIPTION OF SYMBOLS 1... integrated circuit, 21, 22... switch, 3... voltmeter, 41... voltage power supply, 42... programmer controller, 43... current source, 51, 52... pin switching device. Fig. 2a: A broken side view showing the entire structure of the device according to the present invention, Fig. 2b: A top view showing the entire structure of the device according to the present invention, Fig. 2c: A schematic diagram of the circuit showing the configuration of the measuring section of the present invention, Fig. Figure 2d: A schematic diagram of a circuit showing the configuration of the electrostatic application section of the present invention. 2... Electrostatic applying section, 3... Measuring section, 4... Moving device,
21... Contact pin for application, 31... Contact pin for measurement,
6... Socket board, 61... Contact terminal, 7... Socket board rack (no need to store to load socket board). Figures 3a and 3b: A plan view of an embodiment in which contact terminals are arranged in two rows; Figures 4a and 4b: a side view showing an embodiment of a mechanism for moving contact pins for application and connecting contact terminals in succession; Figures 5a and 5b: A plan view of an embodiment in which contact terminals are arranged in one row and two rows of ground pins are arranged in parallel, 62: Ground pin. Figures 6a and 6b: Top and side views of an embodiment in which one row of contact terminals is arranged on both sides and two rows of ground pins are arranged in parallel; Figure 7:
FIG. 7 is a side view of an embodiment using either of two application contact pins for use in the embodiment of FIG. 6;

Claims (1)

【実用新案登録請求の範囲】 (1) 集積回路の端子を差込む為の複数のソケツ
ト及び、該ソケツトと夫々接続する接触端子を配
列したソケツト基盤と該接触端子を選択して印加
用接触ピンを接触させることにより、集積回路の
特定の端子に静電荷を印加する静電荷印加装置と
、測定用接触ピンを全ての接触端子に接触させる
ことにより、各端子間の作動特性および静電破壊
の有無を測定する測定装置と、ソケツト基盤を移
動させる移動機構からなる集積回路の静電破壊テ
スター。 (2) 接触端子を直線上に配列したことを特徴と
する実用新案登録請求の範囲(1)記載の集積回路
の静電破壊テスター。 (3) 接触端子を円周上に配列したことを特徴と
する実用新案登録請求の範囲(1)記載の集積回路
の静電破壊テスター。 (4) 集積回路の各端子からのソケツトにつき、
入力及び出力用の接触端子を2列配列し、各列毎
に接触端子を選択する印加用接触ピンを設けたこ
とを特徴とする実用新案登録請求の範囲(1)記載
の集積回路の静電破壊テスター。 (5) 各ソケツトに接続された接触端子を1列配
列し、この内特定の選択された接触端子の内の1
つをアースに接続し、当該端子と他の端子との間
に印加用接触ピンによつて静電荷を印加すること
を特徴とする実用新案登録請求の範囲(1)記載の
集積回路の静電破壊テスター。
[Claims for Utility Model Registration] (1) A socket base having a plurality of sockets for inserting the terminals of an integrated circuit, contact terminals connected to the sockets, and contact pins for applying voltage by selecting the contact terminals. An electrostatic charge applying device applies an electrostatic charge to a specific terminal of an integrated circuit by bringing the terminals into contact with each other, and a measuring contact pin is brought into contact with all the contact terminals to determine the operating characteristics between each terminal and the possibility of electrostatic damage. An electrostatic damage tester for integrated circuits that consists of a measuring device that measures the presence or absence of a socket, and a moving mechanism that moves the socket board. (2) The electrostatic breakdown tester for integrated circuits according to claim (1), characterized in that the contact terminals are arranged in a straight line. (3) The electrostatic breakdown tester for integrated circuits according to claim (1), characterized in that the contact terminals are arranged circumferentially. (4) For each socket from each terminal of the integrated circuit,
The electrostatic charge of an integrated circuit according to claim (1) for registration of a utility model, characterized in that contact terminals for input and output are arranged in two rows, and contact pins for application to select the contact terminals are provided for each row. destructive tester. (5) Arrange the contact terminals connected to each socket in one row, and one of the contact terminals selected
The electrostatic charge of the integrated circuit according to claim (1) of claim (1) for registration of a utility model, characterized in that one terminal is connected to ground, and an electrostatic charge is applied between the terminal and the other terminal by a contact pin for application. destructive tester.
JP3188486U 1986-03-07 1986-03-07 Pending JPS62145170U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3188486U JPS62145170U (en) 1986-03-07 1986-03-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3188486U JPS62145170U (en) 1986-03-07 1986-03-07

Publications (1)

Publication Number Publication Date
JPS62145170U true JPS62145170U (en) 1987-09-12

Family

ID=30838030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3188486U Pending JPS62145170U (en) 1986-03-07 1986-03-07

Country Status (1)

Country Link
JP (1) JPS62145170U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102832155A (en) * 2011-06-17 2012-12-19 夏普株式会社 Repair device, repair method, and component manufacturing method
JP2013003024A (en) * 2011-06-17 2013-01-07 Sharp Corp Repair device, repair method, and device manufacturing method
JP2013003023A (en) * 2011-06-17 2013-01-07 Sharp Corp Repair device, repair method, and device manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS564874B2 (en) * 1976-12-20 1981-02-02
JPS5821879B2 (en) * 1974-05-07 1983-05-04 古野電気株式会社 Chiyo Onpa Souji Yuhaki
JPS59116063A (en) * 1982-12-23 1984-07-04 Nec Corp Testing method of breakdown in semiconductor device
JPS59231458A (en) * 1983-06-15 1984-12-26 Hitachi Micro Comput Eng Ltd Electrostatic destruction testing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821879B2 (en) * 1974-05-07 1983-05-04 古野電気株式会社 Chiyo Onpa Souji Yuhaki
JPS564874B2 (en) * 1976-12-20 1981-02-02
JPS59116063A (en) * 1982-12-23 1984-07-04 Nec Corp Testing method of breakdown in semiconductor device
JPS59231458A (en) * 1983-06-15 1984-12-26 Hitachi Micro Comput Eng Ltd Electrostatic destruction testing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102832155A (en) * 2011-06-17 2012-12-19 夏普株式会社 Repair device, repair method, and component manufacturing method
JP2013003024A (en) * 2011-06-17 2013-01-07 Sharp Corp Repair device, repair method, and device manufacturing method
JP2013003023A (en) * 2011-06-17 2013-01-07 Sharp Corp Repair device, repair method, and device manufacturing method

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