JPS62142784A - プラズマｃｖｄ法による堆積膜形成装置 - Google Patents

プラズマｃｖｄ法による堆積膜形成装置

Info

Publication number
JPS62142784A
JPS62142784A JP28312785A JP28312785A JPS62142784A JP S62142784 A JPS62142784 A JP S62142784A JP 28312785 A JP28312785 A JP 28312785A JP 28312785 A JP28312785 A JP 28312785A JP S62142784 A JPS62142784 A JP S62142784A
Authority
JP
Japan
Prior art keywords
deposited film
reaction vessel
cvd method
plasma cvd
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28312785A
Other languages
English (en)
Japanese (ja)
Other versions
JPS642191B2 (oth
Inventor
Shigeru Shirai
茂 白井
Masaya Kobayashi
雅也 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP28312785A priority Critical patent/JPS62142784A/ja
Publication of JPS62142784A publication Critical patent/JPS62142784A/ja
Publication of JPS642191B2 publication Critical patent/JPS642191B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP28312785A 1985-12-18 1985-12-18 プラズマｃｖｄ法による堆積膜形成装置 Granted JPS62142784A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28312785A JPS62142784A (ja) 1985-12-18 1985-12-18 プラズマｃｖｄ法による堆積膜形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28312785A JPS62142784A (ja) 1985-12-18 1985-12-18 プラズマｃｖｄ法による堆積膜形成装置

Publications (2)

Publication Number Publication Date
JPS62142784A true JPS62142784A (ja) 1987-06-26
JPS642191B2 JPS642191B2 (oth) 1989-01-13

Family

ID=17661577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28312785A Granted JPS62142784A (ja) 1985-12-18 1985-12-18 プラズマｃｖｄ法による堆積膜形成装置

Country Status (1)

Country Link
JP (1) JPS62142784A (oth)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115537765A (zh) * 2022-09-27 2022-12-30 盛吉盛(宁波)半导体科技有限公司 等离子体化学气相沉积装置和小尺寸沟槽填充方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115537765A (zh) * 2022-09-27 2022-12-30 盛吉盛(宁波)半导体科技有限公司 等离子体化学气相沉积装置和小尺寸沟槽填充方法

Also Published As

Publication number Publication date
JPS642191B2 (oth) 1989-01-13

Similar Documents

Publication Publication Date Title
JP2582553B2 (ja) プラズマｃｖｄ法による機能性堆積膜形成装置
JPH0510428B2 (oth)
US5597623A (en) Process for using microwave plasma CVD
JPH01272A (ja) マイクロ波プラズマｃｖｄ装置
US6335281B1 (en) Deposited film forming process
JPH04183871A (ja) マイクロ波プラズマｃｖｄ法による堆積膜形成装置
JPS62142783A (ja) プラズマｃｖｄ法による堆積膜形成装置
JPS62142784A (ja) プラズマｃｖｄ法による堆積膜形成装置
US5449880A (en) Process and apparatus for forming a deposited film using microwave-plasma CVD
JP3513206B2 (ja) 堆積膜形成方法及び堆積膜形成装置
JPH01100275A (ja) マイクロ波プラズマｃｖｄ法による機能性堆積膜形成装置
JPS6153432B2 (oth)
JP2768539B2 (ja) 堆積膜形成装置
JPS6086277A (ja) 放電による堆積膜の形成方法
JPS6357779A (ja) マイクロ波プラズマｃｖｄ法による機能性堆積膜形成装置
JPH0686665B2 (ja) マイクロ波プラズマｃｖｄ法による機能性堆積膜形成装置
JPH06196407A (ja) 堆積膜形成方法および堆積膜形成装置
JPH0639708B2 (ja) 薄膜製造方法及び薄膜製造装置
JP2553337B2 (ja) マイクロ波プラズマｃｖｄ法による機能性堆積膜形成装置
JP2776087B2 (ja) 電子写真感光体製造装置
JPH01156476A (ja) 堆積膜形成装置
JPS6244577A (ja) プラズマｃｖｄ法による堆積膜の量産装置
JPS63230880A (ja) マイクロ波プラズマｃｖｄ法による機能性堆積膜形成装置
JPH02129378A (ja) マイクロ波プラズマｃｖｄ法による機能性堆積膜の製造装置
JPS62196377A (ja) プラズマｃｖｄ法による堆積膜形成装置