JPS62142758A - Apparatus for forming thin film and method for using same - Google Patents

Apparatus for forming thin film and method for using same

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Publication number
JPS62142758A
JPS62142758A JP28334785A JP28334785A JPS62142758A JP S62142758 A JPS62142758 A JP S62142758A JP 28334785 A JP28334785 A JP 28334785A JP 28334785 A JP28334785 A JP 28334785A JP S62142758 A JPS62142758 A JP S62142758A
Authority
JP
Japan
Prior art keywords
thin film
film forming
sandblasting
forming material
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28334785A
Other languages
Japanese (ja)
Other versions
JPH0735568B2 (en
Inventor
▲吉▼岡 一己
Kazumi Yoshioka
Isamu Inoue
勇 井上
Takeo Oota
太田 威夫
Eizo Kubo
栄蔵 久保
Seiji Kinoshita
木下 政治
Kunio Tanaka
田中 邦生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60283347A priority Critical patent/JPH0735568B2/en
Publication of JPS62142758A publication Critical patent/JPS62142758A/en
Publication of JPH0735568B2 publication Critical patent/JPH0735568B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To efficiently form a thin film having no defects on a sample by vapor deposition in a vacuum vessel by roughening the surface of the internal structure of the vessel confronting a vapor depositing source so as to reduce the stripping of a film from the inner surface of the vessel. CONSTITUTION:The surface of the internal structure 7 of a vacuum vessel 1 is roughened 10 by sandblast. Fine particles of a thin film forming material 2 are deposited on a sample 5 in the vessel 1. Then the particles of the material 2 deposited on the structure 7 are removed by sandblasting and the surface of the structure 7 is roughened again.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体等の’JjJ造工程等で使用する薄膜形
成装置およびその使用方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a thin film forming apparatus used in the JJJ fabrication process of semiconductors, etc., and a method of using the same.

従来の技術 通常、蒸着を行なうには第5図に示すように真空容器1
の内部を所定の真空圧に排気し、薄膜形成材料2を入れ
たルツボ3と試料保持部材4に11&置された試料5と
を対向させ、前記薄膜形成材料4に電子ビームを当てて
加熱して薄膜形成材料2を蒸発させ、試料5に薄膜を形
成する。なおシャッター6はルツボ3より薄膜形成材料
2を飛散させ、蒸着レートが安定するまで、−また蒸着
終了時に前記薄膜形成材料2の飛散をシャヘイし試料6
への付着を防止するために使用するものである。
2. Description of the Related Art Usually, in order to carry out vapor deposition, a vacuum vessel 1 is used as shown in FIG.
The inside of the is evacuated to a predetermined vacuum pressure, the crucible 3 containing the thin film forming material 2 and the sample 5 placed on the sample holding member 4 are made to face each other, and the thin film forming material 4 is irradiated with an electron beam to heat it. The thin film forming material 2 is evaporated to form a thin film on the sample 5. Note that the shutter 6 scatters the thin film forming material 2 from the crucible 3 until the vapor deposition rate is stabilized, and also at the end of the vapor deposition to prevent the scattering of the thin film forming material 2 from the sample 6.
It is used to prevent adhesion to the surface.

ここで真空装置用の材料としては機械的強度が強く、サ
ビが発生しにくくガス放出!1Fが少ない金属が使用さ
れる。これらの金属としては具体的にはステンレス、F
θにCrメッキしたもの、CuKCrメッキしたもの等
がある。
As a material for vacuum equipment, it has strong mechanical strength and is resistant to rust and releases gas! Metals with less 1F are used. Specifically, these metals include stainless steel, F
There are those with Cr plating on θ, and those with CuKCr plating.

定例が解決しようとする問題点 このような材料を従来は1゛〔全装置1を用のfig造
物(オ刺として第5図に示すような/ヤ、ター、あるい
は試料保持ハ14材等に使用していた。しかしこの様な
拐料を使用した場合試料以外の構造物、すなわちシャッ
ター、試料保持部拐等の構造物の表面に付着(−た膜は
、構造物表面が滑らかであるため付着力が弱く連続蒸着
した場合、構造物表面と膜の界面ではがれが発生し、真
空容器の下面に落下し真空容器内1■を汚染する問題が
あった。またはがれて真空゛容器の下面に落下した膜片
が、排気、リーク時に舞い上がり、試料の薄膜形成面に
付着し蒸着J戻に欠陥を発生させる問題があった。例え
ば光ディスクの場合、記録膜の形成面には、トラックピ
ッチ1.6〜3μm、溝巾0.7〜1μm、深さSOO
〜5ooAa度のプリグループが数万本、スパイラル状
あるいは同心状に形成されている。
Conventionally, such materials have been used as a fig structure (as shown in Fig. However, when such coating materials are used, they may adhere to the surfaces of structures other than the sample, such as shutters, sample holding parts, etc., because the surfaces of the structures are smooth. When continuous evaporation is performed with weak adhesion, there is a problem that peeling occurs at the interface between the structure surface and the film, falling to the bottom of the vacuum container and contaminating the inside of the vacuum container. There was a problem that film fragments that fell on the bottom surface would fly up during exhaust or leakage, and adhere to the thin film formation surface of the sample, causing defects in the deposition process.For example, in the case of optical discs, the recording film formation surface has a track pitch. 1.6-3μm, groove width 0.7-1μm, depth SOO
Tens of thousands of pre-groups of ~5ooAa degree are formed in a spiral or concentric shape.

この様なプリグループの形成された面に記録膜を所望の
厚さに蒸着し記録は記録情報により変調されたレーザ光
を集光レンズにより約1μm程度に絞り記録膜に照射し
て、ピット形成、あるいは、記録膜を相変化させて行な
うものである。再生は記録部にレーザー光を照射し、記
録部からの反射光量を読み取り電気信号に変懐して行な
うものである。しかしながら、プリグループ面及び記録
膜に1μm程度の異物が付着していた場合、そのj(1
り分には十分な記録ができず、再生信号出力も小さかっ
たりノイズとなったりして記録、再生に影%7を与える
ものである。また付着異物が大きい場合は複数本のトラ
ックに渡って影響を与えエラーレートが増加するもので
ある。従って、真空容器内の構造物からの膜のはが九を
防止することが大きな課題であった。
A recording film is deposited to a desired thickness on the surface on which such pregroups are formed, and for recording, pits are formed by irradiating the recording film with a laser beam modulated by the recorded information and condensing it to about 1 μm using a condensing lens. Alternatively, the recording film may be subjected to a phase change. Reproduction is performed by irradiating a recording section with a laser beam, reading the amount of light reflected from the recording section, and converting it into an electrical signal. However, if foreign matter of about 1 μm adheres to the pregroup surface and recording film, the j(1
Therefore, sufficient recording is not possible, and the reproduced signal output is also small or produces noise, which has a negative impact on recording and reproduction. Furthermore, if the attached foreign matter is large, it will affect multiple tracks and increase the error rate. Therefore, it has been a major issue to prevent the membrane from peeling off from the structures inside the vacuum container.

そこで本発明は上記問題点を解決しようとするものであ
り真空容器内部の構造物に付着した膜が、はがれて落下
するのを防止して欠陥のない良好な薄膜を得る薄膜形成
装置およびその使用方法を提供することを目的とする。
SUMMARY OF THE INVENTION The present invention aims to solve the above-mentioned problems, and provides a thin film forming apparatus and its use that prevents the film attached to the structure inside the vacuum container from peeling off and falling, thereby producing a good thin film without any defects. The purpose is to provide a method.

問題点を解決するための手段 そこで本発明では真空容器内の構造物の蒸着源と対向す
る面にサンドブラスト処理を施して粗面を形成したもの
である。そして、真空容器内の試料に微粒子状の薄膜形
成材料を付着させた後、粗面の薄膜形成飼料付着7”f
i分を再度サンドブラスト処理して薄膜形成材料を除去
すると共に再度前記構造物表面を粗くして繰返し使用す
るようにしたものである。
Means for Solving the Problems According to the present invention, the surface of the structure inside the vacuum container facing the vapor deposition source is subjected to sandblasting to form a rough surface. After adhering fine particulate thin film-forming material to the sample in the vacuum container, the thin film-forming feed was attached to the rough surface 7”
The structure was sandblasted again to remove the thin film forming material and to roughen the surface of the structure again so that it could be used repeatedly.

作用 本発明は、蒸着源と対向する面にサンドブラスト処理に
より粗面を形成し、この粗面に薄膜形成材料を付着させ
ることにより膜の付着力を飛躍的に向上させ、はがれを
防止するものである。また、粗面に付着した薄膜形成材
料を除去することにより再度使用することができるもの
である。
Function The present invention forms a rough surface by sandblasting on the surface facing the vapor deposition source, and attaches a thin film forming material to this rough surface, thereby dramatically improving the adhesion of the film and preventing peeling. be. Moreover, it can be used again by removing the thin film forming material attached to the rough surface.

実施例 以下本発明の実施例を図面に従って説明する。Example Embodiments of the present invention will be described below with reference to the drawings.

第5図のものと同一構成要素は同一番号を付し説明は省
略する。第1図において、8,9.10は′l:Js空
芥器の内部構造物であるシャ、7タ6、試料保持部利4
.・防着板8の蒸着源であるルツボ3と対向する面側に
サンドブラスト処理により形成した組部である。3ここ
でサンドブラスト処理法とけ高硬度の粒子を高気体と共
にノズルより被加工物の表面に高速で噴射させ、衝突さ
せて面を粗す方法である。そのため使用する粒子の形状
により加工された面の状態が変わるものである。従って
粒子の形状が丸い場合は第2図に示すように小さなうね
りをともなった面粗さになり、多角形で複雑な形状の粒
子企使用した場合は第3図に示すように面状態は複雑な
形状になるものである。膜の付着強度は付着面の状態に
よって左右されるものであり、付着面が第2図に示すよ
うな場合は面粗さは粗くても細く見れば面状態は球面状
のものが連続的につながっているものであり、球面部の
面状態は比較的滑らかになっているものであり、この様
な面に薄膜形成材料が付着しても+j着強度は向上しな
いものである。しかし第3図に示すような複雑な形状の
而粗さに加工すれば膜の付着強度は飛躍的に向上するも
のである。第1図で示した、/セクター6.試料保持部
材4.防Xj板7に形成した粗面の形状は第3図の様な
ものである。ここで/ヤノター6.試料保持部月4.防
Δ・)板7の而f11さを色々変えると共に1回の膜の
堆積量を15001となるようにして連続蒸着し何枚用
ではがれが発生するかを実験した結果を第4図に示す。
Components that are the same as those in FIG. 5 are given the same numbers, and explanations thereof will be omitted. In Fig. 1, 8, 9, 10 are 'l: internal structure of Js empty container, 7 holder 6, sample holding part 4.
.. - This is a set part formed by sandblasting on the side of the deposition prevention plate 8 that faces the crucible 3, which is the evaporation source. 3. Sandblasting is a method in which particles with high hardness are injected together with a high gas at high speed onto the surface of the workpiece through a nozzle and collided with each other to roughen the surface. Therefore, the state of the processed surface changes depending on the shape of the particles used. Therefore, if the shape of the particle is round, the surface roughness will have small undulations as shown in Figure 2, and if particles with a complex polygonal shape are used, the surface condition will be complicated as shown in Figure 3. It has a shape. The adhesion strength of the film is influenced by the condition of the adhesion surface.If the adhesion surface is as shown in Figure 2, the surface roughness may be rough, but if you look closely, the surface condition will be continuously spherical. The surface condition of the spherical portion is relatively smooth, and even if the thin film forming material adheres to such a surface, the +j adhesion strength will not improve. However, if the film is processed to have a complex shape and roughness as shown in FIG. 3, the adhesion strength of the film can be dramatically improved. /sector 6. shown in FIG. Sample holding member 4. The shape of the rough surface formed on the anti-Xj plate 7 is as shown in FIG. Here/Yanotar6. Sample holding section 4. Fig. 4 shows the results of an experiment in which the thickness of the plate 7 was varied and the amount of film deposited at one time was 15001, and the amount of film deposited was continuously deposited to determine how many sheets would cause peeling. .

第4図より、同一面粗さ例えばRmax 5μm〜20
μmの粗さで比較した場合、サンドブラスト処理して而
粗ししたものはフライス加工の面粗さのものより数倍多
く蒸着できるものである。しかしサンドブラスト処理で
面粗さを粗くした構造物を用いれば蒸着枚数は増加する
。面し粗さを粗くすると加工応力が非常に犬きくなり板
厚が薄い場合は大きなソリが生じるが、普通一般的によ
く使用される1H程度の厚さの場合60μm以下の粗さ
にするとほとんどソリを生じることなく使用できる。な
お第4図は蒸着源に一番近く、蒸着膜の堆積量が1番多
い/ヤッターでのデータである。従ってシャッターより
距離のはなれた部分では第4図のデータよりもより蒸着
枚数が増加する。また上記の様な粗さにサンドブラスト
処理法により加工した構造物を用いて連続蒸着して使望
の枚数の蒸着を終了した後、前記構造物の面粗し部の表
面に堆積した膜を再度サンドブラスト処理すると、堆積
膜を除去すると同時に而を粗すことかできるので同一構
造物を繰り返し使用することが可能となり経済性が向上
するものである。これまでは蒸着源と対向する面側にの
み粗面を形成したもので説明したが、両面に前記の様な
粗面を形成すれば、CVD法スパッタ法、イオンブレー
ティング法等のように裏側まで薄膜形成材料が廻り込ん
で付着するような薄膜形成装置にも効果があるものであ
る。
From Figure 4, the same surface roughness, for example, Rmax 5 μm ~ 20
When comparing the surface roughness in μm, the surface roughened by sandblasting can deposit several times more than the surface roughened by milling. However, if a structure whose surface roughness is roughened by sandblasting is used, the number of deposited layers will increase. If the surface roughness is made coarser, the processing stress becomes extremely severe and large warpage will occur if the plate thickness is thin, but if the surface roughness is set to less than 60μm in the case of a thickness of about 1H, which is commonly used, it will hardly occur. Can be used without warping. Note that FIG. 4 shows data at /Yatta, which is closest to the vapor deposition source and has the largest amount of deposited film. Therefore, in areas farther away from the shutter, the number of deposited sheets increases more than the data in FIG. 4 shows. In addition, after the desired number of layers have been deposited by continuous vapor deposition using a structure processed by sandblasting to the roughness described above, the film deposited on the surface of the roughened part of the structure is re-evaporated. Sandblasting can remove the deposited film and at the same time roughen it, making it possible to use the same structure repeatedly and improving economic efficiency. So far, we have explained the case where a rough surface is formed only on the side facing the evaporation source, but if the above-mentioned rough surface is formed on both sides, the back side can be It is also effective for thin film forming apparatuses in which the thin film forming material goes around and adheres to the surface.

発明の効果 本考案によれば真空容器内の構造物の蒸着源と対向する
面にサンドブラスト処理法により面粗し加工を行なうこ
とにより構造物表面からの膜のはがれを飛躍的に少なく
でき、欠陥のない膜を作成でき品質歩留りが向上する。
Effects of the Invention According to the present invention, by roughening the surface of the structure in the vacuum container facing the evaporation source using a sandblasting process, peeling of the film from the surface of the structure can be dramatically reduced, and defects can be reduced. It is possible to create a film free of blemishes, improving quality yield.

また面粗しした表面に堆積した膜を再度サンドブラスト
処理すればその膜を除去すると同時に面を粗すことかで
きるので構造物を繰返し使用することが可能となり経済
性を著るしく向上させることができる。
Furthermore, if the film deposited on the roughened surface is sandblasted again, the film can be removed and the surface can be roughened at the same time, making it possible to use the structure repeatedly and significantly improving economic efficiency. can.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例における薄膜形成装置の概略
構成を示す断正面図、第2図、第3図は同装置の構造物
表面にサンドブラスト処理法により形成した表面状態を
示す断面図、第4図は同装置による面粗さとはがれ枚数
との関係を示す特性図、第6図は従来例における薄膜形
成装置の概略構成を示す断正面図である。 1・・・・・・真空容器、2・・・・・・薄膜形成材料
、3・・・・・・ルツボ、4・・・・・・試料保持部材
、5・・・・・・試料、6・・・・・・/ヤノター、7
・・・・・・防着板、8. 9. 10・・・・・・粗
面。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 宵 27 怪グ=:Z; 第 3 図 −二===
FIG. 1 is a sectional front view showing a schematic configuration of a thin film forming apparatus according to an embodiment of the present invention, and FIGS. 2 and 3 are sectional views showing the surface state formed by sandblasting on the surface of a structure of the same apparatus. , FIG. 4 is a characteristic diagram showing the relationship between surface roughness and the number of sheets peeled off using the same apparatus, and FIG. 6 is a sectional front view showing a schematic configuration of a conventional thin film forming apparatus. 1... Vacuum container, 2... Thin film forming material, 3... Crucible, 4... Sample holding member, 5... Sample, 6.../Yanotar, 7
・・・・・・Adhesion prevention plate, 8. 9. 10...Rough surface. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure night 27 Kaigu=:Z; 3rd figure-2===

Claims (3)

【特許請求の範囲】[Claims] (1)真空容器内部に構成される構造物の蒸着源と対向
する表面にサンドブラスト処理により粗面を形成したこ
とを特徴とする薄膜形成装置。
(1) A thin film forming apparatus characterized in that a rough surface is formed by sandblasting on a surface of a structure constructed inside a vacuum container that faces an evaporation source.
(2)サンドブラスト処理で形成した粗面の粗さがRm
ax5μm以上に形成されたことを特徴とする特許請求
の範囲第1項記載の薄膜形成装置。
(2) The roughness of the rough surface formed by sandblasting is Rm
The thin film forming apparatus according to claim 1, wherein the thin film is formed to have an ax of 5 μm or more.
(3)真空容器内部の構造物の表面をサンドブラストで
粗面とし、前記真空容器内部の試料に微粒子状の薄膜形
成材料を付着させた後、前記粗面の薄膜形成材料付着面
を再度サンドブラスト処理して前記薄膜形成材料を除去
すると共に再度前記構造物の表面を粗くして繰返し使用
するを特徴とする薄膜形成装置の使用方法。
(3) After roughening the surface of the structure inside the vacuum container by sandblasting and attaching fine particulate thin film forming material to the sample inside the vacuum container, the rough surface to which the thin film forming material is attached is again sandblasted. A method for using a thin film forming apparatus, characterized in that the thin film forming material is removed and the surface of the structure is roughened again for repeated use.
JP60283347A 1985-12-16 1985-12-16 How to use thin film forming equipment Expired - Lifetime JPH0735568B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60283347A JPH0735568B2 (en) 1985-12-16 1985-12-16 How to use thin film forming equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60283347A JPH0735568B2 (en) 1985-12-16 1985-12-16 How to use thin film forming equipment

Publications (2)

Publication Number Publication Date
JPS62142758A true JPS62142758A (en) 1987-06-26
JPH0735568B2 JPH0735568B2 (en) 1995-04-19

Family

ID=17664305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60283347A Expired - Lifetime JPH0735568B2 (en) 1985-12-16 1985-12-16 How to use thin film forming equipment

Country Status (1)

Country Link
JP (1) JPH0735568B2 (en)

Cited By (6)

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JPH05198464A (en) * 1992-01-20 1993-08-06 Murata Mfg Co Ltd Electronic part holding device for dry type thin film forming method
US6045665A (en) * 1997-06-02 2000-04-04 Japan Energy Corporation Method of manufacturing member for thin-film formation apparatus and the member for the apparatus
JP2008202072A (en) * 2007-02-19 2008-09-04 Fujitsu Ltd Film deposition system and film deposition method
JP2009016524A (en) * 2007-07-04 2009-01-22 Rohm Co Ltd THIN FILM DEPOSITION APPARATUS, AND ZnO-BASED THIN FILM
DE102010052761A1 (en) * 2010-11-30 2012-05-31 Leybold Optics Gmbh Device for coating a substrate
JP2017017080A (en) * 2015-06-29 2017-01-19 クアーズテック株式会社 Wafer boat and manufacturing method for the same

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Publication number Priority date Publication date Assignee Title
JP4902054B2 (en) * 2001-04-10 2012-03-21 キヤノンアネルバ株式会社 Sputtering equipment

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JPH05198464A (en) * 1992-01-20 1993-08-06 Murata Mfg Co Ltd Electronic part holding device for dry type thin film forming method
US6045665A (en) * 1997-06-02 2000-04-04 Japan Energy Corporation Method of manufacturing member for thin-film formation apparatus and the member for the apparatus
US6319419B1 (en) 1997-06-02 2001-11-20 Japan Energy Corporation Method of manufacturing member for thin-film formation apparatus and the member for the apparatus
JP2008202072A (en) * 2007-02-19 2008-09-04 Fujitsu Ltd Film deposition system and film deposition method
JP2009016524A (en) * 2007-07-04 2009-01-22 Rohm Co Ltd THIN FILM DEPOSITION APPARATUS, AND ZnO-BASED THIN FILM
DE102010052761A1 (en) * 2010-11-30 2012-05-31 Leybold Optics Gmbh Device for coating a substrate
JP2017017080A (en) * 2015-06-29 2017-01-19 クアーズテック株式会社 Wafer boat and manufacturing method for the same
US10026633B2 (en) 2015-06-29 2018-07-17 Coorstek Kk Wafer boat and manufacturing method of the same

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