JPS6214224B2 - - Google Patents

Info

Publication number
JPS6214224B2
JPS6214224B2 JP12502482A JP12502482A JPS6214224B2 JP S6214224 B2 JPS6214224 B2 JP S6214224B2 JP 12502482 A JP12502482 A JP 12502482A JP 12502482 A JP12502482 A JP 12502482A JP S6214224 B2 JPS6214224 B2 JP S6214224B2
Authority
JP
Japan
Prior art keywords
chamber
cassette
substrate
substrate introduction
introduction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12502482A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5918195A (ja
Inventor
Michiharu Tanabe
Kenji Kajama
Tetsuo Ishida
Minoru Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12502482A priority Critical patent/JPS5918195A/ja
Publication of JPS5918195A publication Critical patent/JPS5918195A/ja
Publication of JPS6214224B2 publication Critical patent/JPS6214224B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP12502482A 1982-07-20 1982-07-20 超高真空薄膜成長装置 Granted JPS5918195A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12502482A JPS5918195A (ja) 1982-07-20 1982-07-20 超高真空薄膜成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12502482A JPS5918195A (ja) 1982-07-20 1982-07-20 超高真空薄膜成長装置

Publications (2)

Publication Number Publication Date
JPS5918195A JPS5918195A (ja) 1984-01-30
JPS6214224B2 true JPS6214224B2 (enrdf_load_stackoverflow) 1987-04-01

Family

ID=14899961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12502482A Granted JPS5918195A (ja) 1982-07-20 1982-07-20 超高真空薄膜成長装置

Country Status (1)

Country Link
JP (1) JPS5918195A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900001666B1 (ko) * 1985-07-19 1990-03-17 후지쓰가부시끼가이샤 화합물 반도체의 에피택셜층 성장용의 화학적 유기 금속 기상 성장장치
JPH07114185B2 (ja) * 1986-11-05 1995-12-06 日本電気株式会社 基板加熱装置

Also Published As

Publication number Publication date
JPS5918195A (ja) 1984-01-30

Similar Documents

Publication Publication Date Title
US5674786A (en) Method of heating and cooling large area glass substrates
US6949143B1 (en) Dual substrate loadlock process equipment
JP3909888B2 (ja) トレイ搬送式インライン成膜装置
EP0473594B1 (en) Method for depositing a layer on a substrate and also a processing system for that purpose
US6382895B1 (en) Substrate processing apparatus
JP2600399B2 (ja) 半導体ウエーハ処理装置
JP2010272875A (ja) 大領域ガラス基板のコーティング及びアニーリング方法
JPS6214224B2 (enrdf_load_stackoverflow)
CN115956135A (zh) 在基于物理气相沉积的超薄氮化铝薄膜中实现空前的结晶质量的系统和方法
JPH0786247A (ja) 減圧雰囲気内における被処理物の処理方法及び処理装置
JPS62996B2 (enrdf_load_stackoverflow)
CN108666231B (zh) 基板处理系统、基板传送装置和传送方法
JP2000323551A (ja) 基板処理装置
JPH0542507B2 (enrdf_load_stackoverflow)
JPS6233745B2 (enrdf_load_stackoverflow)
CN113056572A (zh) 真空处理装置
JPH01120811A (ja) 半導体ウエハ処理装置
JPS63177426A (ja) 気相成長方法及び装置
JP4503713B2 (ja) 真空成膜法の基板冷却方法
JPH08260149A (ja) 減圧表面処理装置及び太陽電池製作装置
JP2000119848A (ja) 真空成膜装置
WO2019140989A1 (zh) 半导体设备
JP2001226771A (ja) 成膜装置
JPS63187631A (ja) プラズマ処理装置
JPH04340249A (ja) 半導体ウエハ処理装置