JPS6214108B2 - - Google Patents

Info

Publication number
JPS6214108B2
JPS6214108B2 JP55039460A JP3946080A JPS6214108B2 JP S6214108 B2 JPS6214108 B2 JP S6214108B2 JP 55039460 A JP55039460 A JP 55039460A JP 3946080 A JP3946080 A JP 3946080A JP S6214108 B2 JPS6214108 B2 JP S6214108B2
Authority
JP
Japan
Prior art keywords
region
insulating film
gate
polycrystalline layer
impurity density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55039460A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56135974A (en
Inventor
Masafumi Shinho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP3946080A priority Critical patent/JPS56135974A/ja
Priority to GB8109383A priority patent/GB2072947B/en
Publication of JPS56135974A publication Critical patent/JPS56135974A/ja
Publication of JPS6214108B2 publication Critical patent/JPS6214108B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/4451—

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP3946080A 1980-03-27 1980-03-27 Field effect semiconductor device of junction type and manufacture thereof Granted JPS56135974A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3946080A JPS56135974A (en) 1980-03-27 1980-03-27 Field effect semiconductor device of junction type and manufacture thereof
GB8109383A GB2072947B (en) 1980-03-27 1981-03-25 Junction type field effect semiconductor device and a method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3946080A JPS56135974A (en) 1980-03-27 1980-03-27 Field effect semiconductor device of junction type and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS56135974A JPS56135974A (en) 1981-10-23
JPS6214108B2 true JPS6214108B2 (enExample) 1987-03-31

Family

ID=12553650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3946080A Granted JPS56135974A (en) 1980-03-27 1980-03-27 Field effect semiconductor device of junction type and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56135974A (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852352B2 (ja) * 1977-12-14 1983-11-22 日本電信電話株式会社 電界効果型トランジスタの製法

Also Published As

Publication number Publication date
JPS56135974A (en) 1981-10-23

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