JPS62127739A - ネガテイブ・フオトレジストの現像方法 - Google Patents
ネガテイブ・フオトレジストの現像方法Info
- Publication number
- JPS62127739A JPS62127739A JP61243328A JP24332886A JPS62127739A JP S62127739 A JPS62127739 A JP S62127739A JP 61243328 A JP61243328 A JP 61243328A JP 24332886 A JP24332886 A JP 24332886A JP S62127739 A JPS62127739 A JP S62127739A
- Authority
- JP
- Japan
- Prior art keywords
- trichloroethane
- photoresist
- alcohol
- resist
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80163585A | 1985-11-25 | 1985-11-25 | |
| US801635 | 1985-11-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62127739A true JPS62127739A (ja) | 1987-06-10 |
| JPH0415465B2 JPH0415465B2 (enExample) | 1992-03-18 |
Family
ID=25181656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61243328A Granted JPS62127739A (ja) | 1985-11-25 | 1986-10-15 | ネガテイブ・フオトレジストの現像方法 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0224843B1 (enExample) |
| JP (1) | JPS62127739A (enExample) |
| DE (1) | DE3681697D1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140146A (ja) * | 1987-11-27 | 1989-06-01 | Asahi Glass Co Ltd | レジスト現像剤 |
| JP2010272877A (ja) * | 2002-05-08 | 2010-12-02 | Oerlikon Trading Ag Trubbach | 三次元表面パターンを有するユニットを形成する方法および同方法の使用 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CR6243A (es) * | 1999-09-20 | 2008-04-16 | Syngenta Participations Ag | Formulaciones plaguicidas que contienen tensoactivo de poliarilfenolfosfatoester alcoxilado y tensoactivo de lignosulfonato alcoxilado |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3458313A (en) * | 1966-09-07 | 1969-07-29 | Nasa | High resolution developing of photosensitive resists |
| US3703373A (en) * | 1970-06-15 | 1972-11-21 | Eastman Kodak Co | Processes and elements for preparation of photomechanical images |
-
1986
- 1986-10-15 JP JP61243328A patent/JPS62127739A/ja active Granted
- 1986-11-25 DE DE8686116317T patent/DE3681697D1/de not_active Expired - Lifetime
- 1986-11-25 EP EP19860116317 patent/EP0224843B1/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140146A (ja) * | 1987-11-27 | 1989-06-01 | Asahi Glass Co Ltd | レジスト現像剤 |
| JP2010272877A (ja) * | 2002-05-08 | 2010-12-02 | Oerlikon Trading Ag Trubbach | 三次元表面パターンを有するユニットを形成する方法および同方法の使用 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0224843A2 (en) | 1987-06-10 |
| DE3681697D1 (de) | 1991-10-31 |
| JPH0415465B2 (enExample) | 1992-03-18 |
| EP0224843A3 (en) | 1987-09-09 |
| EP0224843B1 (en) | 1991-09-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3302120B2 (ja) | レジスト用剥離液 | |
| KR100602463B1 (ko) | 기판면으로부터 포토레지스트 및 유기 물질을스트리핑하기 위한 조성물 | |
| JP2527268B2 (ja) | レジスト用剥離剤組成物 | |
| KR100222513B1 (ko) | 내식막용 박리액 조성물 및 이를 사용한 내식막 박리 방법 | |
| KR100286860B1 (ko) | 포토레지스트 리무버 조성물 | |
| JP4542991B2 (ja) | 微細パターン形成材料およびそれを用いた微細パターン形成方法 | |
| JP3287569B2 (ja) | フォトレジスト用最上部反射防止コーティングにおける金属イオン含有量の低減 | |
| US6815151B2 (en) | Rinsing solution for lithography and method for processing substrate with the use of the same | |
| JPH0721638B2 (ja) | 基板の処理方法 | |
| JPS5852578B2 (ja) | エッチング耐性重合体の剥離剤 | |
| JPS58223149A (ja) | 感光性ポリイミド用現像液 | |
| JP2001324823A (ja) | ストリッピング方法 | |
| JPH0612455B2 (ja) | 剥離剤組成物 | |
| US4971715A (en) | Phenolic-free stripping composition and use thereof | |
| JPH0571944B2 (enExample) | ||
| WO2015119759A1 (en) | Composition for removing substances from substrates | |
| WO2001048555A1 (en) | Thinner for rinsing photoresist and method of treating photoresist layer | |
| JPS62127739A (ja) | ネガテイブ・フオトレジストの現像方法 | |
| US4886727A (en) | Method for developing negative photoresists | |
| JP2002539505A (ja) | 半微量幅金属線を形成するのに適するパターンの製造方法 | |
| KR100630338B1 (ko) | 사이드월 제거용 조성물 및 사이드월 제거방법 | |
| EP0258417A1 (en) | Photoresist stripper composition and process of use | |
| EP0163202A2 (en) | Photoresist stripper and stripping method | |
| JP3283612B2 (ja) | フォトレジスト剥離液 | |
| KR20040083157A (ko) | 포토레지스트용 스트리퍼 조성물 |