JPS6212509B2 - - Google Patents
Info
- Publication number
- JPS6212509B2 JPS6212509B2 JP53053604A JP5360478A JPS6212509B2 JP S6212509 B2 JPS6212509 B2 JP S6212509B2 JP 53053604 A JP53053604 A JP 53053604A JP 5360478 A JP5360478 A JP 5360478A JP S6212509 B2 JPS6212509 B2 JP S6212509B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- image forming
- photoconductive layer
- electrophotographic image
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 161
- 239000007789 gas Substances 0.000 claims description 88
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 81
- 230000008021 deposition Effects 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 41
- 239000002345 surface coating layer Substances 0.000 claims description 41
- 238000004519 manufacturing process Methods 0.000 claims description 39
- 150000003377 silicon compounds Chemical class 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 12
- -1 silicon halide Chemical class 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 150000002927 oxygen compounds Chemical class 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 2
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000011247 coating layer Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 51
- 208000028659 discharge Diseases 0.000 description 47
- 239000000758 substrate Substances 0.000 description 35
- 239000000463 material Substances 0.000 description 19
- 239000012535 impurity Substances 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- 229910017840 NH 3 Inorganic materials 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- 238000010790 dilution Methods 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- FKNIDKXOANSRCS-UHFFFAOYSA-N 2,3,4-trinitrofluoren-1-one Chemical compound C1=CC=C2C3=C([N+](=O)[O-])C([N+]([O-])=O)=C([N+]([O-])=O)C(=O)C3=CC2=C1 FKNIDKXOANSRCS-UHFFFAOYSA-N 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 229910003923 SiC 4 Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 229910003691 SiBr Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000711 cancerogenic effect Effects 0.000 description 1
- 231100000315 carcinogenic Toxicity 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910021331 inorganic silicon compound Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5360478A JPS54145537A (en) | 1978-05-04 | 1978-05-04 | Preparation of electrophotographic image forming material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5360478A JPS54145537A (en) | 1978-05-04 | 1978-05-04 | Preparation of electrophotographic image forming material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54145537A JPS54145537A (en) | 1979-11-13 |
| JPS6212509B2 true JPS6212509B2 (US20080293856A1-20081127-C00150.png) | 1987-03-19 |
Family
ID=12947480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5360478A Granted JPS54145537A (en) | 1978-05-04 | 1978-05-04 | Preparation of electrophotographic image forming material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54145537A (US20080293856A1-20081127-C00150.png) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4484809B1 (en) * | 1977-12-05 | 1995-04-18 | Plasma Physics Corp | Glow discharge method and apparatus and photoreceptor devices made therewith |
| JPS56115573A (en) * | 1980-02-15 | 1981-09-10 | Matsushita Electric Ind Co Ltd | Photoconductive element |
| JPS56156834A (en) * | 1980-05-08 | 1981-12-03 | Minolta Camera Co Ltd | Electrophotographic receptor |
| JPS56161551A (en) * | 1980-05-16 | 1981-12-11 | Canon Inc | Image forming member for electrophotography |
| US4889783A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US4394426A (en) * | 1980-09-25 | 1983-07-19 | Canon Kabushiki Kaisha | Photoconductive member with α-Si(N) barrier layer |
| JPS57119362A (en) * | 1981-01-17 | 1982-07-24 | Canon Inc | Photoconductive member |
| JPS57177152A (en) * | 1981-04-24 | 1982-10-30 | Canon Inc | Electrophotographic image forming material |
| JPS57200047A (en) * | 1981-06-02 | 1982-12-08 | Nippon Telegr & Teleph Corp <Ntt> | Electrophotographic photoreceptor |
| JPH0629977B2 (ja) * | 1981-06-08 | 1994-04-20 | 株式会社半導体エネルギー研究所 | 電子写真用感光体 |
| JPH0723962B2 (ja) * | 1981-09-24 | 1995-03-15 | 株式会社半導体エネルギ−研究所 | ドラム形感光体の作製方法 |
| JPS58145951A (ja) * | 1982-02-24 | 1983-08-31 | Stanley Electric Co Ltd | アモルフアスシリコン感光体 |
| JPS58152255A (ja) * | 1982-03-05 | 1983-09-09 | Stanley Electric Co Ltd | 電子写真用感光体 |
| JPH0635323B2 (ja) * | 1982-06-25 | 1994-05-11 | 株式会社日立製作所 | 表面処理方法 |
| JPS5983168A (ja) * | 1982-11-05 | 1984-05-14 | Stanley Electric Co Ltd | 電子写真感光体 |
| JPS6017452A (ja) * | 1984-06-25 | 1985-01-29 | Shunpei Yamazaki | 複写機の作製方法 |
| JPS6017451A (ja) * | 1984-06-25 | 1985-01-29 | Shunpei Yamazaki | 複写機の作製方法 |
| JPS61116361A (ja) * | 1984-11-10 | 1986-06-03 | Matsushita Electric Ind Co Ltd | 電子写真感光体 |
| JP2617417B2 (ja) * | 1993-10-25 | 1997-06-04 | 株式会社 半導体エネルギー研究所 | 電子写真用感光体 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3647427A (en) * | 1969-08-27 | 1972-03-07 | Canon Kk | Germanium and silicon additives to dual-layer electrophotographic plates |
| US3650737A (en) * | 1968-03-25 | 1972-03-21 | Ibm | Imaging method using photoconductive element having a protective coating |
| JPS48102623A (US20080293856A1-20081127-C00150.png) * | 1972-03-07 | 1973-12-24 | ||
| JPS49122337A (US20080293856A1-20081127-C00150.png) * | 1973-03-23 | 1974-11-22 | ||
| JPS5020728A (US20080293856A1-20081127-C00150.png) * | 1973-06-20 | 1975-03-05 | ||
| JPS5216990A (en) * | 1975-07-28 | 1977-02-08 | Rca Corp | Semiconductor device |
| JPS52122471A (en) * | 1976-03-22 | 1977-10-14 | Rca Corp | Schottky barier semiconductor device |
| US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
| JPS5342693A (en) * | 1976-09-29 | 1978-04-18 | Rca Corp | Semiconductor device including amorphous silicone layer |
-
1978
- 1978-05-04 JP JP5360478A patent/JPS54145537A/ja active Granted
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3650737A (en) * | 1968-03-25 | 1972-03-21 | Ibm | Imaging method using photoconductive element having a protective coating |
| US3647427A (en) * | 1969-08-27 | 1972-03-07 | Canon Kk | Germanium and silicon additives to dual-layer electrophotographic plates |
| JPS48102623A (US20080293856A1-20081127-C00150.png) * | 1972-03-07 | 1973-12-24 | ||
| JPS49122337A (US20080293856A1-20081127-C00150.png) * | 1973-03-23 | 1974-11-22 | ||
| JPS5020728A (US20080293856A1-20081127-C00150.png) * | 1973-06-20 | 1975-03-05 | ||
| JPS5216990A (en) * | 1975-07-28 | 1977-02-08 | Rca Corp | Semiconductor device |
| US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
| JPS52122471A (en) * | 1976-03-22 | 1977-10-14 | Rca Corp | Schottky barier semiconductor device |
| JPS5342693A (en) * | 1976-09-29 | 1978-04-18 | Rca Corp | Semiconductor device including amorphous silicone layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54145537A (en) | 1979-11-13 |
