JPS6212502B2 - - Google Patents
Info
- Publication number
- JPS6212502B2 JPS6212502B2 JP3593680A JP3593680A JPS6212502B2 JP S6212502 B2 JPS6212502 B2 JP S6212502B2 JP 3593680 A JP3593680 A JP 3593680A JP 3593680 A JP3593680 A JP 3593680A JP S6212502 B2 JPS6212502 B2 JP S6212502B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- mask
- resist
- ion etching
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 32
- 238000000992 sputter etching Methods 0.000 claims description 21
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 16
- 229910052804 chromium Inorganic materials 0.000 claims description 16
- 239000011651 chromium Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 16
- 238000005530 etching Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- -1 argon ion Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- FZIZEIAMIREUTN-UHFFFAOYSA-N azane;cerium(3+) Chemical compound N.[Ce+3] FZIZEIAMIREUTN-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- GOUZWOPDZOFEKT-UHFFFAOYSA-N dichloromethane;nitric acid Chemical compound ClCCl.O[N+]([O-])=O GOUZWOPDZOFEKT-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3593680A JPS56130751A (en) | 1980-03-18 | 1980-03-18 | Manufacture of mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3593680A JPS56130751A (en) | 1980-03-18 | 1980-03-18 | Manufacture of mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56130751A JPS56130751A (en) | 1981-10-13 |
| JPS6212502B2 true JPS6212502B2 (zh) | 1987-03-19 |
Family
ID=12455897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3593680A Granted JPS56130751A (en) | 1980-03-18 | 1980-03-18 | Manufacture of mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56130751A (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6196765A (ja) * | 1984-10-17 | 1986-05-15 | Toshiba Corp | 金属パタ−ン形成方法 |
| GB2189903A (en) * | 1986-04-01 | 1987-11-04 | Plessey Co Plc | An etch technique for metal mask definition |
-
1980
- 1980-03-18 JP JP3593680A patent/JPS56130751A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56130751A (en) | 1981-10-13 |
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