JPS62124862U - - Google Patents
Info
- Publication number
- JPS62124862U JPS62124862U JP1025686U JP1025686U JPS62124862U JP S62124862 U JPS62124862 U JP S62124862U JP 1025686 U JP1025686 U JP 1025686U JP 1025686 U JP1025686 U JP 1025686U JP S62124862 U JPS62124862 U JP S62124862U
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- buried gate
- static induction
- supply portion
- lattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000006698 induction Effects 0.000 claims description 4
- 230000003068 static effect Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims 1
Landscapes
- Junction Field-Effect Transistors (AREA)
- Thyristors (AREA)
Description
第１図ａは本考案による静電誘導型トランジス
タをそのソース層を除いてゲート部を示した平面
図、第１図ｂは、第１図ａのＸ―Ｙ線部分をソー
ス層も含めて示した縦断面図、第２図は従来の静
電誘導型トランジスタのゲート部の平面図。
４……ゲート電極、５……ドレインオーミツク
Ｎ＋層、６……ドレインＮ−層、７……ソースＮ
層、８，８′，９，９′……給電点、１２……埋
め込みゲート層。
Figure 1a is a plan view of the electrostatic induction transistor according to the present invention, showing the gate portion excluding the source layer, and Figure 1b is a plan view of the XY line section of Figure 1a including the source layer. FIG. 2 is a plan view of a gate portion of a conventional static induction transistor. 4...Gate electrode, 5...Drain Ohmic N + layer, 6...Drain N- layer, 7...Source N
Layers 8, 8', 9, 9'... Feeding point, 12... Buried gate layer.
Claims (1)
る給電部を形成して成る埋め込みゲート型の静電
誘導型トランジスタにおいて、前記埋め込みゲー
トの平面形状が格子状であり、しかも前記給電部
から離れて２つの給電部間の中間領域になるにし
たがつて格子の間隔がせまくなるようにしたこと
を特徴とする静電誘導型トランジスタ。 In a buried gate static induction type transistor in which a power supply portion made of a metal film is formed at each end of a buried gate, the planar shape of the buried gate is a lattice shape, and two power supply portions are formed apart from the power supply portion. A static induction transistor characterized in that the distance between the lattice becomes narrower toward the intermediate region between the parts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986010256U JP2517172Y2 (en) | 1986-01-29 | 1986-01-29 | Static induction transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986010256U JP2517172Y2 (en) | 1986-01-29 | 1986-01-29 | Static induction transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62124862U true JPS62124862U (en) | 1987-08-08 |
| JP2517172Y2 JP2517172Y2 (en) | 1996-11-13 |
Family
ID=30796382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986010256U Expired - Lifetime JP2517172Y2 (en) | 1986-01-29 | 1986-01-29 | Static induction transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2517172Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4996878U (en) * | 1972-12-15 | 1974-08-21 | ||
| JPS5028279A (en) * | 1973-07-11 | 1975-03-22 |
-
1986
- 1986-01-29 JP JP1986010256U patent/JP2517172Y2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4996878U (en) * | 1972-12-15 | 1974-08-21 | ||
| JPS5028279A (en) * | 1973-07-11 | 1975-03-22 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2517172Y2 (en) | 1996-11-13 |