JPS62121915A - 磁気抵抗効果ヘツド - Google Patents
磁気抵抗効果ヘツドInfo
- Publication number
- JPS62121915A JPS62121915A JP26219885A JP26219885A JPS62121915A JP S62121915 A JPS62121915 A JP S62121915A JP 26219885 A JP26219885 A JP 26219885A JP 26219885 A JP26219885 A JP 26219885A JP S62121915 A JPS62121915 A JP S62121915A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- gap
- head
- magnetic field
- magnetoresistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000694 effects Effects 0.000 title abstract description 8
- 230000005291 magnetic effect Effects 0.000 claims abstract description 132
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims description 9
- 230000004907 flux Effects 0.000 abstract description 21
- 239000000758 substrate Substances 0.000 abstract description 14
- 230000005330 Barkhausen effect Effects 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 11
- 230000008929 regeneration Effects 0.000 description 8
- 238000011069 regeneration method Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- 230000035699 permeability Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26219885A JPS62121915A (ja) | 1985-11-21 | 1985-11-21 | 磁気抵抗効果ヘツド |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26219885A JPS62121915A (ja) | 1985-11-21 | 1985-11-21 | 磁気抵抗効果ヘツド |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62121915A true JPS62121915A (ja) | 1987-06-03 |
JPH0348571B2 JPH0348571B2 (enrdf_load_stackoverflow) | 1991-07-24 |
Family
ID=17372442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26219885A Granted JPS62121915A (ja) | 1985-11-21 | 1985-11-21 | 磁気抵抗効果ヘツド |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62121915A (enrdf_load_stackoverflow) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS549612A (en) * | 1977-06-23 | 1979-01-24 | Mitsubishi Electric Corp | Thin-film magnetoresistant head |
-
1985
- 1985-11-21 JP JP26219885A patent/JPS62121915A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS549612A (en) * | 1977-06-23 | 1979-01-24 | Mitsubishi Electric Corp | Thin-film magnetoresistant head |
Also Published As
Publication number | Publication date |
---|---|
JPH0348571B2 (enrdf_load_stackoverflow) | 1991-07-24 |
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