JPS62115784A - Diode incorporated in monolithic integrated circuit - Google Patents
Diode incorporated in monolithic integrated circuitInfo
- Publication number
- JPS62115784A JPS62115784A JP18566986A JP18566986A JPS62115784A JP S62115784 A JPS62115784 A JP S62115784A JP 18566986 A JP18566986 A JP 18566986A JP 18566986 A JP18566986 A JP 18566986A JP S62115784 A JPS62115784 A JP S62115784A
- Authority
- JP
- Japan
- Prior art keywords
- region
- anode
- integrated circuit
- type
- monolithic integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 238000002955 isolation Methods 0.000 claims description 13
- 238000000926 separation method Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 9
- 230000010354 integration Effects 0.000 abstract description 2
- 230000002349 favourable effect Effects 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Element Separation (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明はモノリシック集積回路に組込まれるダイオード
の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to improvements in diodes incorporated into monolithic integrated circuits.
（ロ）従来の技術
従来のモノリシック集積回路に組込まれるツェナー特性
を有するダイオードは第２図に示す如く、Ｐ型の半導体
基板（１）と基板（１）上に設けられたＮ型エピタキシ
ャル層（２）とエピタキシャル層（２）を貫通し複数の
島領域（３）（３）を形成するＰ＋型の分離領域（４）
とを備え、分離領域（４）をアノード領域（５）と兼用
しアノード領域（５）にＮ”型のカソード領域（６）を
設け各領域（５）（６）にオーミック接触したアノード
電極（７）およびカソード電極（８）より構成されてい
る。(b) Prior Art A diode with Zener characteristics that is incorporated into a conventional monolithic integrated circuit consists of a P-type semiconductor substrate (1) and an N-type epitaxial layer (1) provided on the substrate (1), as shown in FIG. 2) and a P+ type isolation region (4) penetrating the epitaxial layer (2) and forming a plurality of island regions (3) (3).
The isolation region (4) also serves as an anode region (5), and the anode region (5) is provided with an N'' type cathode region (6), and an anode electrode ( 7) and a cathode electrode (8).
（ハ）発明が解決しようとする問題点
しかしながら、斯る構造ではアノード領域（５）が分離
領域（４）で兼用されているので、アノード領域（５）
表面に高濃度不純物拡散時に発生する結晶欠陥が多くな
る。即ち、分離領域〈４）はエピタキシャル層（２）を
貫通させる様に拡散しているので、高濃度不純物拡散を
長時間行う必要があり、その表面に極めて結晶欠陥が発
生し易くなるからである。この結果第３図に点線で示す
様に結晶欠陥によるリーク電流等が発生してツェナー特
性が悪化する欠点があった。(c) Problems to be solved by the invention However, in such a structure, since the anode region (5) is also used as the separation region (4), the anode region (5)
More crystal defects occur on the surface when high-concentration impurities are diffused. That is, since the isolation region (4) is diffused to penetrate the epitaxial layer (2), it is necessary to carry out high-concentration impurity diffusion for a long time, and crystal defects are extremely likely to occur on its surface. . As a result, as shown by the dotted line in FIG. 3, leakage current and the like occur due to crystal defects, resulting in deterioration of Zener characteristics.
（ニ）問題点を解決するための手段
本発明は斯上した欠点に鑑みてなされ、高濃度不純物拡
散による分離領域（１４）表面に重ねて低濃度不純物拡
散によるアノード領域（１５）を形成することにより、
従来の欠点を除去したモノリシ・ツク集積回路に組込ま
れるダイオードを実現するものである。(d) Means for Solving the Problems The present invention has been made in view of the above-mentioned drawbacks, and an anode region (15) formed by diffusion of low concentration impurities is formed overlapping the surface of the isolation region (14) formed by diffusion of high concentration impurities. By this,
The present invention provides a diode incorporated into a monolithic integrated circuit which eliminates the drawbacks of the prior art.
（ネ）作用
本発明によれば、分離領域（１４）表面に発生した結晶
欠陥はアノード領域（１５）の低濃度不純物拡散によっ
てアニールされて減少する。この結果特性良好なツェナ
ー特性が得られる。(f) Effect According to the present invention, crystal defects generated on the surface of the isolation region (14) are annealed and reduced by the low concentration impurity diffusion in the anode region (15). As a result, good Zener characteristics can be obtained.
（へ）実施例
以下第１図および第３図を参照して本発明の一実施例を
詳述する。(f) Example An example of the present invention will be described below in detail with reference to FIGS. 1 and 3.
本発明に依るダイオードは第１図に示す如く、Ｐ型の半
導体基板（１１）と基板（１１）上に設けられたＮ型の
エピタキシャル層（１２）とエピタキシャル層（１２）
を貫通し且つエピタキシャル層（１２）を複数の島領域
（１３）（１３）に分離するＰ１型の分離領域（１４）
とを備え、分離領域（１４）表面から低濃度不純物拡散
により形成されたＰ型のアノード領域（１５）とアノー
ド領域（１５）表面に拡散されたＮ１型のカソード領域
（１６）と各領域（１５）（１６）にオーミック接触し
たアノード電極（１７）とカソード電極（１８）より構
成されている。As shown in FIG. 1, the diode according to the present invention includes a P-type semiconductor substrate (11), an N-type epitaxial layer (12) provided on the substrate (11), and an epitaxial layer (12).
a P1 type isolation region (14) that penetrates the epitaxial layer (12) and separates the epitaxial layer (12) into a plurality of island regions (13) (13);
A P-type anode region (15) formed by low concentration impurity diffusion from the surface of the isolation region (14), an N1-type cathode region (16) diffused on the surface of the anode region (15), and each region ( 15) Consists of an anode electrode (17) and a cathode electrode (18) in ohmic contact with (16).
本発明の特徴は分離領域（１４）表面に低濃度不純物拡
散によるアノード領域（１５）を形成することにある。A feature of the present invention is that an anode region (15) is formed on the surface of the isolation region (14) by diffusing low concentration impurities.
前述した如く分離領域（１４）は高濃度不純物拡散を長
時間行うことによりその表面に多く結晶欠陥を発生して
いる。このアノード領域（１５）は分離領域（１４）に
重ねて低濃度不純物拡散をして形成され、具体的にはＮ
ＰＮトランジスタのベース拡散等を利用する。アノード
領域（１５）はエピタキシャルＪｉ（１２）に比べて浅
く拡散されるので、分離領域（１４）より低濃度不純物
拡散で短時間で形成される。このため分離領域（１４）
表面に発生した多くの結晶欠陥はこの低濃度不純物拡散
時にアニールされて減少するのである。従ってアノード
領域（１５〉は分離領域（１４）に重ねて形成されてい
るにも拘らず、その表面の結晶欠陥は分離領域（１４）
表面より大巾に減少する。この結果、第３図に実線で示
す如く良好なツェナー特性が得られ、従来よりその特性
を大巾に改善できる。As described above, many crystal defects are generated on the surface of the isolation region (14) due to the long-time high concentration impurity diffusion. This anode region (15) is formed by overlapping the isolation region (14) and diffusing low concentration impurities, specifically N
The base diffusion of a PN transistor is used. Since the anode region (15) is diffused shallower than the epitaxial Ji (12), it can be formed in a shorter time with lower concentration impurity diffusion than the isolation region (14). For this reason, the separation area (14)
Many crystal defects generated on the surface are annealed and reduced during this low concentration impurity diffusion. Therefore, even though the anode region (15) is formed overlapping the separation region (14), the crystal defects on the surface of the anode region (15) overlap the separation region (14).
It decreases greatly from the surface. As a result, good Zener characteristics can be obtained as shown by the solid line in FIG. 3, and the characteristics can be greatly improved compared to the conventional one.
＜ト）発明の効果
以上に詳述した如く、本発明に依れば低濃度不純物拡散
によるアノード領域を設けることにより高濃度不純物拡
散による分離領域の結晶欠陥を有効に除去でき良好なツ
ェナー特性のダイオードを得ることができる。また本発
明は分離領域内に良好なツェナーダイオードを得ること
によりモノリシック集積回路の集積度向上に寄与できる
有益なものである。<G) Effects of the Invention As detailed above, according to the present invention, by providing an anode region with low concentration impurity diffusion, crystal defects in the separation region due to high concentration impurity diffusion can be effectively removed, and good Zener characteristics can be obtained. You can get a diode. Further, the present invention is advantageous in that it can contribute to improving the degree of integration of monolithic integrated circuits by obtaining a good Zener diode in the isolation region.
第１図は本発明のダイオードを説明する断面図、第２図
は従来のダイオードを説明する断面図、第３図は従来と
本発明のツェナー特性を示ず特性図である。
（１１）は半導体基板、（１２）はエピタキシャル層、
（１３）は島領域、 （１４）は分離領域、 （１５
）はアノード領域、 （１６）はカソード領域、 （１
７）はアノード電極、（１Ｂ）はカソード電極である。FIG. 1 is a sectional view illustrating a diode of the present invention, FIG. 2 is a sectional view illustrating a conventional diode, and FIG. 3 is a characteristic diagram not showing the Zener characteristics of the conventional diode and the present invention. (11) is a semiconductor substrate, (12) is an epitaxial layer,
(13) is the island region, (14) is the separation region, (15
) is the anode area, (16) is the cathode area, (1
7) is an anode electrode, and (1B) is a cathode electrode.
Claims (1)
電型のエピタキシャル層と該エピタキシャル層を貫通し
て複数の島領域を形成する一導電型で高濃度不純物拡散
による分離領域とを備えたモノリシック集積回路に於い
て、前記分離領域に重ねて一導電型で低濃度不純物拡散
によるアノード領域を設け該アノード領域内に逆導電型
のカソード領域を形成して成るモノリシック集積回路に
組込まれるダイオード。1. A semiconductor substrate of one conductivity type, an epitaxial layer of an opposite conductivity type provided on the substrate, and an isolation region of one conductivity type formed by high concentration impurity diffusion penetrating the epitaxial layer to form a plurality of island regions. In the monolithic integrated circuit, an anode region of one conductivity type formed by diffusion of low concentration impurities is provided over the separation region, and a cathode region of the opposite conductivity type is formed within the anode region. diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18566986A JPS62115784A (en) | 1986-08-07 | 1986-08-07 | Diode incorporated in monolithic integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18566986A JPS62115784A (en) | 1986-08-07 | 1986-08-07 | Diode incorporated in monolithic integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62115784A true JPS62115784A (en) | 1987-05-27 |
| JPH0125233B2 JPH0125233B2 (en) | 1989-05-16 |
Family
ID=16174800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18566986A Granted JPS62115784A (en) | 1986-08-07 | 1986-08-07 | Diode incorporated in monolithic integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62115784A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62291163A (en) * | 1986-06-11 | 1987-12-17 | Oki Electric Ind Co Ltd | Semiconductor integrated circuit device |
-
1986
- 1986-08-07 JP JP18566986A patent/JPS62115784A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62291163A (en) * | 1986-06-11 | 1987-12-17 | Oki Electric Ind Co Ltd | Semiconductor integrated circuit device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0125233B2 (en) | 1989-05-16 |
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