JPS6211515B2 - - Google Patents
Info
- Publication number
- JPS6211515B2 JPS6211515B2 JP11404476A JP11404476A JPS6211515B2 JP S6211515 B2 JPS6211515 B2 JP S6211515B2 JP 11404476 A JP11404476 A JP 11404476A JP 11404476 A JP11404476 A JP 11404476A JP S6211515 B2 JPS6211515 B2 JP S6211515B2
- Authority
- JP
- Japan
- Prior art keywords
- forming
- region
- insulating film
- sio
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000005192 partition Methods 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 27
- 238000000034 method Methods 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11404476A JPS5339086A (en) | 1976-09-22 | 1976-09-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11404476A JPS5339086A (en) | 1976-09-22 | 1976-09-22 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5339086A JPS5339086A (en) | 1978-04-10 |
| JPS6211515B2 true JPS6211515B2 (cg-RX-API-DMAC7.html) | 1987-03-12 |
Family
ID=14627613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11404476A Granted JPS5339086A (en) | 1976-09-22 | 1976-09-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5339086A (cg-RX-API-DMAC7.html) |
-
1976
- 1976-09-22 JP JP11404476A patent/JPS5339086A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5339086A (en) | 1978-04-10 |