JPS6211512B2 - - Google Patents
Info
- Publication number
- JPS6211512B2 JPS6211512B2 JP53137525A JP13752578A JPS6211512B2 JP S6211512 B2 JPS6211512 B2 JP S6211512B2 JP 53137525 A JP53137525 A JP 53137525A JP 13752578 A JP13752578 A JP 13752578A JP S6211512 B2 JPS6211512 B2 JP S6211512B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- load
- fet
- electric field
- load resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 230000005684 electric field Effects 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920006395 saturated elastomer Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13752578A JPS5563859A (en) | 1978-11-08 | 1978-11-08 | Field-effect transistor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13752578A JPS5563859A (en) | 1978-11-08 | 1978-11-08 | Field-effect transistor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5563859A JPS5563859A (en) | 1980-05-14 |
| JPS6211512B2 true JPS6211512B2 (de) | 1987-03-12 |
Family
ID=15200707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13752578A Granted JPS5563859A (en) | 1978-11-08 | 1978-11-08 | Field-effect transistor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5563859A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2449369A1 (fr) * | 1979-02-13 | 1980-09-12 | Thomson Csf | Circuit logique comportant une resistance saturable |
| JPS55134955A (en) * | 1979-04-09 | 1980-10-21 | Nec Corp | Gaas integrated circuit |
| JPS58143562A (ja) * | 1982-02-22 | 1983-08-26 | Toshiba Corp | ＧａＡｓ集積回路 |
| JPS63311752A (ja) * | 1987-06-15 | 1988-12-20 | Matsushita Electronics Corp | 半導体集積回路装置 |
-
1978
- 1978-11-08 JP JP13752578A patent/JPS5563859A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5563859A (en) | 1980-05-14 |
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