JPS6211252A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS6211252A JPS6211252A JP29689285A JP29689285A JPS6211252A JP S6211252 A JPS6211252 A JP S6211252A JP 29689285 A JP29689285 A JP 29689285A JP 29689285 A JP29689285 A JP 29689285A JP S6211252 A JPS6211252 A JP S6211252A
- Authority
- JP
- Japan
- Prior art keywords
- bump
- layer
- wiring
- wiring layer
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000000694 effects Effects 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 2
- 238000005304 joining Methods 0.000 abstract description 2
- 230000002040 relaxant effect Effects 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 21
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 18
- 239000010931 gold Substances 0.000 description 18
- 229910052737 gold Inorganic materials 0.000 description 18
- 239000010408 film Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000006378 damage Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 230000001066 destructive effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910001361 White metal Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010969 white metal Substances 0.000 description 1
Landscapes
- Wire Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29689285A JPS6211252A (ja) | 1985-12-27 | 1985-12-27 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29689285A JPS6211252A (ja) | 1985-12-27 | 1985-12-27 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12631877A Division JPS5459080A (en) | 1977-10-19 | 1977-10-19 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6211252A true JPS6211252A (ja) | 1987-01-20 |
| JPS6223461B2 JPS6223461B2 (enrdf_load_stackoverflow) | 1987-05-22 |
Family
ID=17839511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29689285A Granted JPS6211252A (ja) | 1985-12-27 | 1985-12-27 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6211252A (enrdf_load_stackoverflow) |
-
1985
- 1985-12-27 JP JP29689285A patent/JPS6211252A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6223461B2 (enrdf_load_stackoverflow) | 1987-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6138612B2 (enrdf_load_stackoverflow) | ||
| US5086018A (en) | Method of making a planarized thin film covered wire bonded semiconductor package | |
| US4051508A (en) | Semiconductor device having multistepped bump terminal electrodes | |
| US5151559A (en) | Planarized thin film surface covered wire bonded semiconductor package | |
| JP2528991B2 (ja) | 樹脂封止型半導体装置及びリ―ドフレ―ム | |
| JP2509422B2 (ja) | 半導体装置及びその製造方法 | |
| US4674671A (en) | Thermosonic palladium lead wire bonding | |
| JPWO2018025571A1 (ja) | パワー半導体装置 | |
| JPH06302653A (ja) | 半導体装置 | |
| US4984056A (en) | Semiconductor integrated circuit device | |
| US5124277A (en) | Method of ball bonding to non-wire bonded electrodes of semiconductor devices | |
| KR920006264B1 (ko) | 반도체장치의 전극접합부 구조 | |
| JP3961335B2 (ja) | 半導体集積回路装置 | |
| JPS6211252A (ja) | 半導体装置 | |
| JPS6223462B2 (enrdf_load_stackoverflow) | ||
| JPH02168640A (ja) | 異なる基板間の接続構造 | |
| JP2629460B2 (ja) | 混成集積回路装置 | |
| JPH04320362A (ja) | 樹脂封止型半導体装置 | |
| US20030052416A1 (en) | Thick film circuit connection | |
| JPH08236575A (ja) | 半導体装置及びその製造方法 | |
| KR19980079528A (ko) | 반도체 장치와 그의 제조 방법 | |
| JPH0992654A (ja) | 半導体装置の電極構造体及びその形成方法並びに半導体装置の実装体及び半導体装置 | |
| JPH0525182B2 (enrdf_load_stackoverflow) | ||
| JPH03268340A (ja) | 半導体装置 | |
| JPH0653270A (ja) | 半導体装置 |