JPS6210017B2 - - Google Patents
Info
- Publication number
- JPS6210017B2 JPS6210017B2 JP1983179A JP1983179A JPS6210017B2 JP S6210017 B2 JPS6210017 B2 JP S6210017B2 JP 1983179 A JP1983179 A JP 1983179A JP 1983179 A JP1983179 A JP 1983179A JP S6210017 B2 JPS6210017 B2 JP S6210017B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma
- amorphous silicon
- silicon
- passivation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 31
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 239000005360 phosphosilicate glass Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- 230000009257 reactivity Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 44
- 239000010410 layer Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983179A JPS55113334A (en) | 1979-02-23 | 1979-02-23 | Manufacture of passivation film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983179A JPS55113334A (en) | 1979-02-23 | 1979-02-23 | Manufacture of passivation film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55113334A JPS55113334A (en) | 1980-09-01 |
| JPS6210017B2 true JPS6210017B2 (cg-RX-API-DMAC7.html) | 1987-03-04 |
Family
ID=12010221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1983179A Granted JPS55113334A (en) | 1979-02-23 | 1979-02-23 | Manufacture of passivation film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55113334A (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10941215B2 (en) | 2010-11-30 | 2021-03-09 | Genentech, Inc. | Low affinity blood brain barrier receptor antibodies and uses thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5846644A (ja) * | 1981-09-14 | 1983-03-18 | Oki Electric Ind Co Ltd | 半導体素子 |
| JPS5851523A (ja) * | 1981-09-22 | 1983-03-26 | Fujitsu Ltd | 半導体装置 |
| JPH0245932A (ja) * | 1988-08-06 | 1990-02-15 | Fujitsu Ltd | 半導体装置におけるパッシベーション構造 |
-
1979
- 1979-02-23 JP JP1983179A patent/JPS55113334A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10941215B2 (en) | 2010-11-30 | 2021-03-09 | Genentech, Inc. | Low affinity blood brain barrier receptor antibodies and uses thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55113334A (en) | 1980-09-01 |
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