JPS6199331A - 微細パタ−ン形成法 - Google Patents

微細パタ−ン形成法

Info

Publication number
JPS6199331A
JPS6199331A JP59220664A JP22066484A JPS6199331A JP S6199331 A JPS6199331 A JP S6199331A JP 59220664 A JP59220664 A JP 59220664A JP 22066484 A JP22066484 A JP 22066484A JP S6199331 A JPS6199331 A JP S6199331A
Authority
JP
Japan
Prior art keywords
layer
resin
etching
resist
gas plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59220664A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0564338B2 (enExample
Inventor
Yukikazu Kamimura
上村　幸和
Yasutaka Shimizu
清水　保孝
Namio Ooi
册雄 大井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to JP59220664A priority Critical patent/JPS6199331A/ja
Publication of JPS6199331A publication Critical patent/JPS6199331A/ja
Publication of JPH0564338B2 publication Critical patent/JPH0564338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/00—

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59220664A 1984-10-19 1984-10-19 微細パタ−ン形成法 Granted JPS6199331A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59220664A JPS6199331A (ja) 1984-10-19 1984-10-19 微細パタ−ン形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59220664A JPS6199331A (ja) 1984-10-19 1984-10-19 微細パタ−ン形成法

Publications (2)

Publication Number Publication Date
JPS6199331A true JPS6199331A (ja) 1986-05-17
JPH0564338B2 JPH0564338B2 (enExample) 1993-09-14

Family

ID=16754514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59220664A Granted JPS6199331A (ja) 1984-10-19 1984-10-19 微細パタ−ン形成法

Country Status (1)

Country Link
JP (1) JPS6199331A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63286843A (ja) * 1987-05-19 1988-11-24 Nippon Zeon Co Ltd ポジ型フォトレジスト組成物
JPH02275453A (ja) * 1989-04-18 1990-11-09 Fuji Photo Film Co Ltd フオトレジスト組成物
US5963841A (en) * 1997-08-01 1999-10-05 Advanced Micro Devices, Inc. Gate pattern formation using a bottom anti-reflective coating
KR100433462B1 (ko) * 2001-03-02 2004-05-31 엔이씨 엘씨디 테크놀로지스, 엘티디. 패턴형성방법 및 이 패턴형성방법을 이용한액정표시장치의 제조방법
WO2020255985A1 (ja) * 2019-06-17 2020-12-24 日産化学株式会社 ジシアノスチリル基を含むウェットエッチング可能なレジスト下層膜形成組成物

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63286843A (ja) * 1987-05-19 1988-11-24 Nippon Zeon Co Ltd ポジ型フォトレジスト組成物
JPH02275453A (ja) * 1989-04-18 1990-11-09 Fuji Photo Film Co Ltd フオトレジスト組成物
US5963841A (en) * 1997-08-01 1999-10-05 Advanced Micro Devices, Inc. Gate pattern formation using a bottom anti-reflective coating
KR100433462B1 (ko) * 2001-03-02 2004-05-31 엔이씨 엘씨디 테크놀로지스, 엘티디. 패턴형성방법 및 이 패턴형성방법을 이용한액정표시장치의 제조방법
WO2020255985A1 (ja) * 2019-06-17 2020-12-24 日産化学株式会社 ジシアノスチリル基を含むウェットエッチング可能なレジスト下層膜形成組成物
JPWO2020255985A1 (enExample) * 2019-06-17 2020-12-24
US11977331B2 (en) 2019-06-17 2024-05-07 Nissan Chemical Corporation Composition containing a dicyanostyryl group, for forming a resist underlayer film capable of being wet etched

Also Published As

Publication number Publication date
JPH0564338B2 (enExample) 1993-09-14

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