JPS6199327A - ＩｎＰ系の化合物半導体へのＺｎ拡散方法 - Google Patents

ＩｎＰ系の化合物半導体へのＺｎ拡散方法

Info

Publication number
JPS6199327A
JPS6199327A JP20913784A JP20913784A JPS6199327A JP S6199327 A JPS6199327 A JP S6199327A JP 20913784 A JP20913784 A JP 20913784A JP 20913784 A JP20913784 A JP 20913784A JP S6199327 A JPS6199327 A JP S6199327A
Authority
JP
Japan
Prior art keywords
znp2
diffusion
amount
quartz tube
zn3p2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20913784A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0224369B2 (enExample
Inventor
Shuzo Kagawa
修三 香川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20913784A priority Critical patent/JPS6199327A/ja
Publication of JPS6199327A publication Critical patent/JPS6199327A/ja
Publication of JPH0224369B2 publication Critical patent/JPH0224369B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP20913784A 1984-10-05 1984-10-05 ＩｎＰ系の化合物半導体へのＺｎ拡散方法 Granted JPS6199327A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20913784A JPS6199327A (ja) 1984-10-05 1984-10-05 ＩｎＰ系の化合物半導体へのＺｎ拡散方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20913784A JPS6199327A (ja) 1984-10-05 1984-10-05 ＩｎＰ系の化合物半導体へのＺｎ拡散方法

Publications (2)

Publication Number Publication Date
JPS6199327A true JPS6199327A (ja) 1986-05-17
JPH0224369B2 JPH0224369B2 (enExample) 1990-05-29

Family

ID=16567906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20913784A Granted JPS6199327A (ja) 1984-10-05 1984-10-05 ＩｎＰ系の化合物半導体へのＺｎ拡散方法

Country Status (1)

Country Link
JP (1) JPS6199327A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506186A (en) * 1988-06-27 1996-04-09 U.S. Philips Corporation Method of manufacturing an optoelectronic device
EP0723301A3 (en) * 1995-01-23 1997-05-14 Sumitomo Electric Industries Compound semiconductor photodetector and method of manufacturing the same
US6214708B1 (en) 1998-07-29 2001-04-10 Sumitomo Electric Industries, Ltd. Method and apparatus for diffusing zinc into groups III-V compound semiconductor crystals

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020250491A1 (ja) * 2019-06-11 2020-12-17 日本碍子株式会社 複合基板、弾性波素子および複合基板の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58160341A (ja) * 1981-12-14 1983-09-22 ピ−ピ−ジ−・インダストリ−ズ・インコ−ポレ−テツド 芳香族パ−オキサイド重合開始したポリオ−ル（アリルカ−ボネ−ト）ポリマ−の変色を減少させる方法およびその方法により得られたポリマ−

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58160341A (ja) * 1981-12-14 1983-09-22 ピ−ピ−ジ−・インダストリ−ズ・インコ−ポレ−テツド 芳香族パ−オキサイド重合開始したポリオ−ル（アリルカ−ボネ−ト）ポリマ−の変色を減少させる方法およびその方法により得られたポリマ−

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506186A (en) * 1988-06-27 1996-04-09 U.S. Philips Corporation Method of manufacturing an optoelectronic device
EP0723301A3 (en) * 1995-01-23 1997-05-14 Sumitomo Electric Industries Compound semiconductor photodetector and method of manufacturing the same
US5910014A (en) * 1995-01-23 1999-06-08 Sumitomo Electric Industries, Ltd. Method of making compound semiconductor photodetector
US6214708B1 (en) 1998-07-29 2001-04-10 Sumitomo Electric Industries, Ltd. Method and apparatus for diffusing zinc into groups III-V compound semiconductor crystals
US6516743B2 (en) 1998-07-29 2003-02-11 Sumitomo Electric Industries, Ltd. Method and apparatus diffusing zinc into groups III-V compound semiconductor crystals

Also Published As

Publication number Publication date
JPH0224369B2 (enExample) 1990-05-29

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