JPS6197938A - 半導体素子の組立方法 - Google Patents
半導体素子の組立方法Info
- Publication number
- JPS6197938A JPS6197938A JP59219903A JP21990384A JPS6197938A JP S6197938 A JPS6197938 A JP S6197938A JP 59219903 A JP59219903 A JP 59219903A JP 21990384 A JP21990384 A JP 21990384A JP S6197938 A JPS6197938 A JP S6197938A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- ball
- wire
- copper
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W72/0711—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H10W72/01551—
-
- H10W72/07141—
-
- H10W72/07173—
-
- H10W72/075—
-
- H10W72/07511—
-
- H10W72/07521—
-
- H10W72/07532—
-
- H10W72/07541—
-
- H10W72/50—
-
- H10W72/536—
-
- H10W72/5363—
-
- H10W72/5449—
-
- H10W72/884—
-
- H10W90/736—
-
- H10W90/756—
Landscapes
- Wire Bonding (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59219903A JPS6197938A (ja) | 1984-10-19 | 1984-10-19 | 半導体素子の組立方法 |
| US06/759,273 US4732313A (en) | 1984-07-27 | 1985-07-26 | Apparatus and method for manufacturing semiconductor device |
| EP85109406A EP0169574B1 (en) | 1984-07-27 | 1985-07-26 | Apparatus for manufacturing semiconductor device |
| DE8585109406T DE3577371D1 (de) | 1984-07-27 | 1985-07-26 | Apparat zum herstellen einer halbleiteranordnung. |
| KR1019850005537A KR900000205B1 (ko) | 1984-10-19 | 1985-07-31 | 결속상태가 개선된 반도체 장치의 제조장치 |
| CN85106110A CN85106110B (zh) | 1984-10-19 | 1985-08-13 | 制造半导体器件的装置及其使用方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59219903A JPS6197938A (ja) | 1984-10-19 | 1984-10-19 | 半導体素子の組立方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6197938A true JPS6197938A (ja) | 1986-05-16 |
| JPH0367340B2 JPH0367340B2 (enExample) | 1991-10-22 |
Family
ID=16742835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59219903A Granted JPS6197938A (ja) | 1984-07-27 | 1984-10-19 | 半導体素子の組立方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6197938A (enExample) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52142485A (en) * | 1976-05-21 | 1977-11-28 | Mitsubishi Electric Corp | Wire bonding device |
| JPS5713747A (en) * | 1980-06-27 | 1982-01-23 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS58223339A (ja) * | 1982-06-22 | 1983-12-24 | Toshiba Corp | 半導体ペレツトのワイヤボンデイング方法 |
-
1984
- 1984-10-19 JP JP59219903A patent/JPS6197938A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52142485A (en) * | 1976-05-21 | 1977-11-28 | Mitsubishi Electric Corp | Wire bonding device |
| JPS5713747A (en) * | 1980-06-27 | 1982-01-23 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS58223339A (ja) * | 1982-06-22 | 1983-12-24 | Toshiba Corp | 半導体ペレツトのワイヤボンデイング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0367340B2 (enExample) | 1991-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR960005549B1 (ko) | 볼 본딩 방법 및 그 장치 | |
| JPH06333972A (ja) | 半田ワイヤーにボール部を形成する方法 | |
| US20070029367A1 (en) | Semiconductor device | |
| JPS60154537A (ja) | 半導体デバイスの製作方法 | |
| JPH0645409A (ja) | ワイヤーボンディング方法及びその装置 | |
| JPS6197938A (ja) | 半導体素子の組立方法 | |
| JPS6197937A (ja) | 半導体素子の組立方法及びその装置 | |
| JPH0354855B2 (enExample) | ||
| JPS61253824A (ja) | 半導体素子の組立方法 | |
| JP2975207B2 (ja) | 半田ワイヤーによるワイヤーボンディング装置 | |
| JPS61172343A (ja) | ワイヤボンデイング方法及び装置 | |
| JPS62152143A (ja) | バンプ形成方法 | |
| KR900000205B1 (ko) | 결속상태가 개선된 반도체 장치의 제조장치 | |
| JPS6366055B2 (enExample) | ||
| JPH0325019B2 (enExample) | ||
| JPS61119053A (ja) | ワイヤボンデイング方法 | |
| JPS60177639A (ja) | 半導体装置の製造方法 | |
| JPH0241864Y2 (enExample) | ||
| JPH0587976B2 (enExample) | ||
| JPS6379331A (ja) | ワイヤボンデイング装置 | |
| JPS6167926A (ja) | ボンデイング方法 | |
| JPS5944837A (ja) | 金線ボンデイング方法 | |
| JPS6154638A (ja) | ワイヤボンデイング装置 | |
| JPH04251948A (ja) | 半導体装置の製造方法 | |
| JPS61113250A (ja) | ワイヤボンダにおけるワイヤ接続方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |