JPS6189681A - 電界効果トランジスタの製造方法 - Google Patents

電界効果トランジスタの製造方法

Info

Publication number
JPS6189681A
JPS6189681A JP59211878A JP21187884A JPS6189681A JP S6189681 A JPS6189681 A JP S6189681A JP 59211878 A JP59211878 A JP 59211878A JP 21187884 A JP21187884 A JP 21187884A JP S6189681 A JPS6189681 A JP S6189681A
Authority
JP
Japan
Prior art keywords
film
pattern
recess
opening
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59211878A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0156533B2 (enrdf_load_stackoverflow
Inventor
Shoichi Noda
野田　正一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59211878A priority Critical patent/JPS6189681A/ja
Publication of JPS6189681A publication Critical patent/JPS6189681A/ja
Publication of JPH0156533B2 publication Critical patent/JPH0156533B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP59211878A 1984-10-08 1984-10-08 電界効果トランジスタの製造方法 Granted JPS6189681A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59211878A JPS6189681A (ja) 1984-10-08 1984-10-08 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59211878A JPS6189681A (ja) 1984-10-08 1984-10-08 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6189681A true JPS6189681A (ja) 1986-05-07
JPH0156533B2 JPH0156533B2 (enrdf_load_stackoverflow) 1989-11-30

Family

ID=16613113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59211878A Granted JPS6189681A (ja) 1984-10-08 1984-10-08 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6189681A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2633100A1 (fr) * 1988-06-20 1989-12-22 Mitsubishi Electric Corp Transistor a effet de champ et procede de fabrication
JPH02140942A (ja) * 1988-11-22 1990-05-30 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH02142143A (ja) * 1988-11-22 1990-05-31 Nec Corp 電界効果トランジスタの製造方法
US5139968A (en) * 1989-03-03 1992-08-18 Mitsubishi Denki Kabushiki Kaisha Method of producing a t-shaped gate electrode
US5270228A (en) * 1991-02-14 1993-12-14 Mitsubishi Denki Kabushiki Kaisha Method of fabricating gate electrode in recess
EP0696053A1 (fr) 1994-06-29 1996-02-07 Laboratoires D'electronique Philips Procédé de réalisation d'un transistor à effet de champ à canal creusé
JP2008032271A (ja) * 2006-07-26 2008-02-14 Fulta Electric Machinery Co Ltd エアブロー装置の放熱機構
US9310136B2 (en) 2008-12-17 2016-04-12 Swep International Ab Port opening of heat exchanger

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2633100A1 (fr) * 1988-06-20 1989-12-22 Mitsubishi Electric Corp Transistor a effet de champ et procede de fabrication
US5362677A (en) * 1988-06-20 1994-11-08 Mitsubishi Denki Kabushiki Kaisha Method for producing a field effect transistor with a gate recess structure
JPH02140942A (ja) * 1988-11-22 1990-05-30 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH02142143A (ja) * 1988-11-22 1990-05-31 Nec Corp 電界効果トランジスタの製造方法
US5139968A (en) * 1989-03-03 1992-08-18 Mitsubishi Denki Kabushiki Kaisha Method of producing a t-shaped gate electrode
US5270228A (en) * 1991-02-14 1993-12-14 Mitsubishi Denki Kabushiki Kaisha Method of fabricating gate electrode in recess
EP0696053A1 (fr) 1994-06-29 1996-02-07 Laboratoires D'electronique Philips Procédé de réalisation d'un transistor à effet de champ à canal creusé
US5643807A (en) * 1994-06-29 1997-07-01 U.S. Philips Corporation Method of manufacturing a semiconductor device comprising a buried channel field effect transistor
JP2008032271A (ja) * 2006-07-26 2008-02-14 Fulta Electric Machinery Co Ltd エアブロー装置の放熱機構
US9310136B2 (en) 2008-12-17 2016-04-12 Swep International Ab Port opening of heat exchanger

Also Published As

Publication number Publication date
JPH0156533B2 (enrdf_load_stackoverflow) 1989-11-30

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