JPS6188234U - - Google Patents
Info
- Publication number
- JPS6188234U JPS6188234U JP17314484U JP17314484U JPS6188234U JP S6188234 U JPS6188234 U JP S6188234U JP 17314484 U JP17314484 U JP 17314484U JP 17314484 U JP17314484 U JP 17314484U JP S6188234 U JPS6188234 U JP S6188234U
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- heater
- main body
- tray
- quartz tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Muffle Furnaces And Rotary Kilns (AREA)
Description
第1図は本考案の実施例の概要を示す縦断面図
、第2図は従来の縦形半導体熱処理炉の一例の概
要を示す縦断面図、第3図は従来の半導体熱処理
炉の、また第4図は本考案の半導体熱処理炉の各
1加熱サイクルの温度−時間特性の一例を示す特
性曲線図である。
1……炉体、1a〜1d……壁体、2……面状
赤外線放射ヒータ、3……石英管、F……炉本体
、W……半導体基板、5……上・下に駆動される
アーム、6……回転駆動機、7……トレイ支持台
、8……トレイ、10……送気管、11……排気
管。
FIG. 1 is a longitudinal sectional view showing an outline of an embodiment of the present invention, FIG. 2 is a longitudinal sectional view showing an outline of an example of a conventional vertical semiconductor heat treatment furnace, and FIG. 3 is a longitudinal sectional view showing an outline of an example of a conventional vertical semiconductor heat treatment furnace. FIG. 4 is a characteristic curve diagram showing an example of the temperature-time characteristics of each heating cycle of the semiconductor heat treatment furnace of the present invention. DESCRIPTION OF SYMBOLS 1... Furnace body, 1a to 1d... Wall body, 2... Planar infrared radiation heater, 3... Quartz tube, F... Furnace body, W... Semiconductor substrate, 5... Driven upward and downward. arm, 6... rotary drive machine, 7... tray support stand, 8... tray, 10... air pipe, 11... exhaust pipe.
Claims (1)
体の内壁にヒータを備え該ヒータの内側に間隙を
隔てて少なくとも下端側が開放された石英管を備
えて略垂直に配設された縦形の炉本体と、該炉本
体内で半導体を熱処理するために該半導体を載置
するトレイと、前記炉本体とトレイとの垂直方向
の関係位置を相対的に変化させて前記トレイを前
記炉本体の下方から該炉本体の前記石英管内に出
し入れする駆動機構とを有する縦形半導体熱処理
炉において、前記炉体は各表面に熱反射率を大き
くする加工を施した複数の薄肉の壁体を隣接する
もの相互に所定の間隔をおいて重ねてなる多重壁
で構成され、前記ヒータは面状赤外線放射ヒータ
からなり、且つ前記炉体と石英管との間及び前記
ヒータと石英管との間の間隙に冷却用空気を送り
込む送気管と、前記間隙から空気を炉外に排出す
る排気管とを具備したことを特徴とする縦形半導
体熱処理炉。 A vertical furnace arranged approximately vertically, with a heater on the inner wall of a cylindrical furnace body with a closed upper end and an open lower end, and a quartz tube with a gap spaced inside the heater and with at least the lower end open. A main body, a tray on which a semiconductor is placed for heat-treating the semiconductor in the furnace main body, and a vertical relationship between the furnace main body and the tray is relatively changed so that the tray is placed below the furnace main body. In the vertical semiconductor heat treatment furnace, the furnace body has a plurality of thin wall bodies each having a surface treated to increase heat reflectivity, and the furnace body has a plurality of thin wall bodies that are processed to increase heat reflectance on each surface of the furnace body. The heater is composed of a planar infrared radiant heater, and the space between the furnace body and the quartz tube and the space between the heater and the quartz tube is provided with cooling air. 1. A vertical semiconductor heat treatment furnace comprising: an air supply pipe for feeding air; and an exhaust pipe for discharging air from the gap to the outside of the furnace.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17314484U JPS6188234U (en) | 1984-11-16 | 1984-11-16 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17314484U JPS6188234U (en) | 1984-11-16 | 1984-11-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6188234U true JPS6188234U (en) | 1986-06-09 |
Family
ID=30730804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17314484U Pending JPS6188234U (en) | 1984-11-16 | 1984-11-16 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6188234U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03224217A (en) * | 1988-06-16 | 1991-10-03 | Tokyo Electron Sagami Ltd | Heat-treating device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5390033A (en) * | 1977-01-19 | 1978-08-08 | Hitachi Ltd | Heat treatment equipment |
JPS5691417A (en) * | 1979-12-26 | 1981-07-24 | Fujitsu Ltd | Heating treatment device for wafer |
-
1984
- 1984-11-16 JP JP17314484U patent/JPS6188234U/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5390033A (en) * | 1977-01-19 | 1978-08-08 | Hitachi Ltd | Heat treatment equipment |
JPS5691417A (en) * | 1979-12-26 | 1981-07-24 | Fujitsu Ltd | Heating treatment device for wafer |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03224217A (en) * | 1988-06-16 | 1991-10-03 | Tokyo Electron Sagami Ltd | Heat-treating device |
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