JPS6192049U - - Google Patents
Info
- Publication number
- JPS6192049U JPS6192049U JP17565684U JP17565684U JPS6192049U JP S6192049 U JPS6192049 U JP S6192049U JP 17565684 U JP17565684 U JP 17565684U JP 17565684 U JP17565684 U JP 17565684U JP S6192049 U JPS6192049 U JP S6192049U
- Authority
- JP
- Japan
- Prior art keywords
- gas
- furnace
- vertical
- trays
- tray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000002699 waste material Substances 0.000 claims 1
Landscapes
- Furnace Details (AREA)
Description
第１図は本考案の実施例の概要を示す縦断面図
、第２図は従来の縦形半導体熱処理炉の一例の概
要を示す縦断面図である。
Ｆ…炉本体、Ｗ…半導体基板、５…上・下に駆
動されるアーム、６…回転駆動機、７…トレイ支
持台、８…トレイ、１１…ガス供給管、１１ａ…
ガス噴出孔、１２…ガス排出管、１２ａ…ガス吸
気孔。
FIG. 1 is a longitudinal sectional view showing an outline of an embodiment of the present invention, and FIG. 2 is a longitudinal sectional view showing an outline of an example of a conventional vertical semiconductor heat treatment furnace. F...Furnace body, W...Semiconductor substrate, 5...Arm driven up and down, 6...Rotary drive machine, 7...Tray support stand, 8...Tray, 11...Gas supply pipe, 11a...
Gas blowout hole, 12... gas discharge pipe, 12a... gas intake hole.
Claims (1)
し内壁にヒータを備えて略垂直に配置された縦形
の炉本体と、熱処理すべき複数の半導体基板を上
下に対向するもの相互に所定の間隔をおいて垂直
方向に重ねて保持するトレイと、前記炉本体とト
レイとの垂直方向の関係位置を相対的に変化させ
て前記トレイを前記炉本体の下方から該炉本体内
に出し入れする駆動機構と、前記トレイに保持さ
れて前記炉本体内に挿入された半導体基板に所要
のガス又は空気を供給して廃気を炉外に排出する
ガス給排機構とを有する縦形半導体熱処理炉にお
いて、前記ガス給排機構は前記炉本体内に挿入さ
れる前記トレイを間にして相対向するように該炉
本体内に配設されたガス供給管及びガス排出管を
具備し、前記ガス供給管には前記トレイ上の各半
導体基板の面に平行に前記ガス又は空気を流すよ
うに所定の間隔で複数のガス噴出孔が並設され、
前記ガス排出管には前記各ガス噴出孔に対向する
位置にガス吸気孔が並設されていることを特徴と
する縦形半導体熱処理炉。 A vertical furnace body, which has a cylindrical shape with a closed upper end and an open lower end, is equipped with a heater on the inner wall, and is arranged approximately vertically, and a plurality of semiconductor substrates to be heat treated are vertically opposed to each other at a predetermined distance from each other. trays that are stacked and held in a vertical direction; and a drive mechanism that moves the trays into and out of the furnace body from below the furnace body by relatively changing the vertical relationship position between the furnace body and the trays. , a vertical semiconductor heat treatment furnace having a gas supply/discharge mechanism that supplies a required gas or air to a semiconductor substrate held by the tray and inserted into the furnace main body and discharges waste air to the outside of the furnace; The supply/discharge mechanism includes a gas supply pipe and a gas discharge pipe arranged in the furnace main body so as to face each other with the tray inserted into the furnace main body in between, and the gas supply pipe includes the gas discharge pipe. A plurality of gas ejection holes are arranged in parallel at predetermined intervals so as to flow the gas or air parallel to the surface of each semiconductor substrate on the tray,
A vertical semiconductor heat treatment furnace, characterized in that the gas exhaust pipe has gas intake holes arranged in parallel at positions facing each of the gas ejection holes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17565684U JPS6192049U (en) | 1984-11-21 | 1984-11-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17565684U JPS6192049U (en) | 1984-11-21 | 1984-11-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6192049U true JPS6192049U (en) | 1986-06-14 |
Family
ID=30733257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17565684U Pending JPS6192049U (en) | 1984-11-21 | 1984-11-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6192049U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62160537U (en) * | 1986-01-17 | 1987-10-13 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55118631A (en) * | 1979-03-07 | 1980-09-11 | Fujitsu Ltd | Diffusion furnace for treatment of semiconductor wafer |
| JPS55140233A (en) * | 1979-04-18 | 1980-11-01 | Fujitsu Ltd | Chemical gaseous-phase growing device |
| JPS5730859U (en) * | 1980-07-23 | 1982-02-18 |
-
1984
- 1984-11-21 JP JP17565684U patent/JPS6192049U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55118631A (en) * | 1979-03-07 | 1980-09-11 | Fujitsu Ltd | Diffusion furnace for treatment of semiconductor wafer |
| JPS55140233A (en) * | 1979-04-18 | 1980-11-01 | Fujitsu Ltd | Chemical gaseous-phase growing device |
| JPS5730859U (en) * | 1980-07-23 | 1982-02-18 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62160537U (en) * | 1986-01-17 | 1987-10-13 |
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