JPS6180881A - 半導体レ−ザ装置 - Google Patents
半導体レ−ザ装置Info
- Publication number
- JPS6180881A JPS6180881A JP59201502A JP20150284A JPS6180881A JP S6180881 A JPS6180881 A JP S6180881A JP 59201502 A JP59201502 A JP 59201502A JP 20150284 A JP20150284 A JP 20150284A JP S6180881 A JPS6180881 A JP S6180881A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- refractive index
- coating layer
- stripe
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000010410 layer Substances 0.000 claims abstract description 118
- 239000011247 coating layer Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000000694 effects Effects 0.000 claims abstract description 10
- 238000005253 cladding Methods 0.000 claims description 30
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 3
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 230000004913 activation Effects 0.000 abstract 1
- 230000001815 facial effect Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59201502A JPS6180881A (ja) | 1984-09-28 | 1984-09-28 | 半導体レ−ザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59201502A JPS6180881A (ja) | 1984-09-28 | 1984-09-28 | 半導体レ−ザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6180881A true JPS6180881A (ja) | 1986-04-24 |
| JPH0568873B2 JPH0568873B2 (enrdf_load_stackoverflow) | 1993-09-29 |
Family
ID=16442114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59201502A Granted JPS6180881A (ja) | 1984-09-28 | 1984-09-28 | 半導体レ−ザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6180881A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03196688A (ja) * | 1989-12-26 | 1991-08-28 | Matsushita Electric Ind Co Ltd | 半導体レーザおよびその製造方法 |
| US5114877A (en) * | 1991-01-08 | 1992-05-19 | Xerox Corporation | Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth |
| US5138625A (en) * | 1991-01-08 | 1992-08-11 | Xerox Corporation | Quantum wire semiconductor laser |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3110949U (ja) * | 2004-03-04 | 2005-07-07 | 萬國電脳股▲ふん▼有限公司 | カード検出器を持つｕｓｂコネクタ |
| JP2009059052A (ja) * | 2007-08-30 | 2009-03-19 | Seiko Instruments Inc | 携帯用電子機器 |
| US20090176383A1 (en) * | 2008-01-07 | 2009-07-09 | Einam Yitzhak Amotz | Apparatus and method for transferring power from a stationary unit to a mobile unit |
| JP2011113727A (ja) * | 2009-11-25 | 2011-06-09 | Sharp Corp | 直流給電装置、直流給電方法、直流給電コンセント、直流給電プラグ及び直流給電プラグと直流給電コンセントの組み合わせ |
| KR101204510B1 (ko) * | 2012-07-09 | 2012-11-26 | (주)에스피에스 | 모바일 단말기의 충전 장치 |
-
1984
- 1984-09-28 JP JP59201502A patent/JPS6180881A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3110949U (ja) * | 2004-03-04 | 2005-07-07 | 萬國電脳股▲ふん▼有限公司 | カード検出器を持つｕｓｂコネクタ |
| JP2009059052A (ja) * | 2007-08-30 | 2009-03-19 | Seiko Instruments Inc | 携帯用電子機器 |
| US20090176383A1 (en) * | 2008-01-07 | 2009-07-09 | Einam Yitzhak Amotz | Apparatus and method for transferring power from a stationary unit to a mobile unit |
| JP2011113727A (ja) * | 2009-11-25 | 2011-06-09 | Sharp Corp | 直流給電装置、直流給電方法、直流給電コンセント、直流給電プラグ及び直流給電プラグと直流給電コンセントの組み合わせ |
| KR101204510B1 (ko) * | 2012-07-09 | 2012-11-26 | (주)에스피에스 | 모바일 단말기의 충전 장치 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03196688A (ja) * | 1989-12-26 | 1991-08-28 | Matsushita Electric Ind Co Ltd | 半導体レーザおよびその製造方法 |
| US5114877A (en) * | 1991-01-08 | 1992-05-19 | Xerox Corporation | Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth |
| US5138625A (en) * | 1991-01-08 | 1992-08-11 | Xerox Corporation | Quantum wire semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0568873B2 (enrdf_load_stackoverflow) | 1993-09-29 |
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