JPS6178184A - 半導体発光素子 - Google Patents

半導体発光素子

Info

Publication number
JPS6178184A
JPS6178184A JP59200001A JP20000184A JPS6178184A JP S6178184 A JPS6178184 A JP S6178184A JP 59200001 A JP59200001 A JP 59200001A JP 20000184 A JP20000184 A JP 20000184A JP S6178184 A JPS6178184 A JP S6178184A
Authority
JP
Japan
Prior art keywords
base
light emitting
layer
region
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59200001A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0213468B2 (enExample
Inventor
Atsushi Shibata
淳 柴田
Yoshihiro Mori
義弘 森
Kenichi Iga
伊賀 健一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59200001A priority Critical patent/JPS6178184A/ja
Publication of JPS6178184A publication Critical patent/JPS6178184A/ja
Publication of JPH0213468B2 publication Critical patent/JPH0213468B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
JP59200001A 1984-09-25 1984-09-25 半導体発光素子 Granted JPS6178184A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59200001A JPS6178184A (ja) 1984-09-25 1984-09-25 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59200001A JPS6178184A (ja) 1984-09-25 1984-09-25 半導体発光素子

Publications (2)

Publication Number Publication Date
JPS6178184A true JPS6178184A (ja) 1986-04-21
JPH0213468B2 JPH0213468B2 (enExample) 1990-04-04

Family

ID=16417141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59200001A Granted JPS6178184A (ja) 1984-09-25 1984-09-25 半導体発光素子

Country Status (1)

Country Link
JP (1) JPS6178184A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4987576A (en) * 1988-11-30 1991-01-22 Siemens Aktiengesellschaft Electrically tunable semiconductor laser with ridge waveguide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4987576A (en) * 1988-11-30 1991-01-22 Siemens Aktiengesellschaft Electrically tunable semiconductor laser with ridge waveguide

Also Published As

Publication number Publication date
JPH0213468B2 (enExample) 1990-04-04

Similar Documents

Publication Publication Date Title
US6798804B2 (en) Laser apparatus including surface-emitting semiconductor excited with semiconductor laser element, and directly modulated
US5408105A (en) Optoelectronic semiconductor device with mesa
US5323026A (en) Semiconductor laser with integrated phototransistor for dynamic power stabilization
US4280108A (en) Transverse junction array laser
JPS62188393A (ja) 半導体レ−ザ
US5331659A (en) Optical semiconductor device
JPH02208067A (ja) 光走査装置
US5068870A (en) Semiconductor light emission system
JPH05167197A (ja) 光半導体装置
JPS6178184A (ja) 半導体発光素子
JPH0563301A (ja) 半導体光素子および光通信システム
JPS63116489A (ja) 光集積回路
JPS6159793A (ja) 半導体発光素子
JPH0554716B2 (enExample)
JP2697453B2 (ja) 面発光レーザ
JPS61218194A (ja) 半導体レ−ザ
JPS6257259A (ja) 発光半導体素子
JP2685441B2 (ja) 波長可変半導体レーザ
JPH04115585A (ja) アレイ型半導体レーザ装置及び駆動方法
JPH0311689A (ja) 面発光型波長制御dbrレーザ
JPS62162385A (ja) 半導体レ−ザ装置
JP2903322B2 (ja) 半導体集積レーザ
JPH0311325A (ja) 面入出力半導体レーザメモリ
JPS63241978A (ja) 分布帰還型半導体レ−ザ
JPS60165777A (ja) 光双安定集積素子