JPS6176665A - 蒸着膜形成装置 - Google Patents
蒸着膜形成装置Info
- Publication number
- JPS6176665A JPS6176665A JP19675384A JP19675384A JPS6176665A JP S6176665 A JPS6176665 A JP S6176665A JP 19675384 A JP19675384 A JP 19675384A JP 19675384 A JP19675384 A JP 19675384A JP S6176665 A JPS6176665 A JP S6176665A
- Authority
- JP
- Japan
- Prior art keywords
- energy
- deposited film
- ion
- ion beam
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19675384A JPS6176665A (ja) | 1984-09-21 | 1984-09-21 | 蒸着膜形成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19675384A JPS6176665A (ja) | 1984-09-21 | 1984-09-21 | 蒸着膜形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6176665A true JPS6176665A (ja) | 1986-04-19 |
| JPH0214426B2 JPH0214426B2 (cg-RX-API-DMAC7.html) | 1990-04-09 |
Family
ID=16363037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19675384A Granted JPS6176665A (ja) | 1984-09-21 | 1984-09-21 | 蒸着膜形成装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6176665A (cg-RX-API-DMAC7.html) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62177176A (ja) * | 1986-01-30 | 1987-08-04 | Nippon Steel Corp | 薄膜形成装置 |
| JPS63307272A (ja) * | 1987-06-05 | 1988-12-14 | Hitachi Ltd | イオンビ−ムスパツタ装置 |
| JPH03190047A (ja) * | 1989-12-19 | 1991-08-20 | Japan Steel Works Ltd:The | 複合イオンビーム照射方法及び照射装置 |
| JPH04173961A (ja) * | 1990-11-06 | 1992-06-22 | Japan Steel Works Ltd:The | 複合イオンビームによるダイナミックミキシング方法 |
| JP2020198265A (ja) * | 2019-06-05 | 2020-12-10 | 株式会社アルバック | イオン注入装置、イオン源 |
-
1984
- 1984-09-21 JP JP19675384A patent/JPS6176665A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62177176A (ja) * | 1986-01-30 | 1987-08-04 | Nippon Steel Corp | 薄膜形成装置 |
| JPS63307272A (ja) * | 1987-06-05 | 1988-12-14 | Hitachi Ltd | イオンビ−ムスパツタ装置 |
| JPH03190047A (ja) * | 1989-12-19 | 1991-08-20 | Japan Steel Works Ltd:The | 複合イオンビーム照射方法及び照射装置 |
| JPH04173961A (ja) * | 1990-11-06 | 1992-06-22 | Japan Steel Works Ltd:The | 複合イオンビームによるダイナミックミキシング方法 |
| JP2020198265A (ja) * | 2019-06-05 | 2020-12-10 | 株式会社アルバック | イオン注入装置、イオン源 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0214426B2 (cg-RX-API-DMAC7.html) | 1990-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4959242A (en) | Method for forming a thin film | |
| US3836451A (en) | Arc deposition apparatus | |
| US6570172B2 (en) | Magnetron negative ion sputter source | |
| US5022977A (en) | Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus | |
| EP0288608B1 (en) | Apparatus for forming a thin film | |
| JPS6254078A (ja) | 陰極スパツタリング処理により基板に薄層を被着する装置 | |
| JPS6330986B2 (cg-RX-API-DMAC7.html) | ||
| JPS6176665A (ja) | 蒸着膜形成装置 | |
| JPH0456761A (ja) | 薄膜形成装置 | |
| US20090020415A1 (en) | "Iontron" ion beam deposition source and a method for sputter deposition of different layers using this source | |
| US3555332A (en) | Apparatus for producing a high energy beam of selected metallic ions | |
| JP2849771B2 (ja) | スパッタ型イオン源 | |
| JPS6176662A (ja) | 薄膜形成方法および装置 | |
| JPS59139930A (ja) | 蒸着装置 | |
| US20230282466A1 (en) | Sputter magnetron for operating with other plasma sources | |
| JP2529220B2 (ja) | 硫化物蛍光体膜の製造方法 | |
| JP4448664B2 (ja) | 薄膜材料の形成方法および形成装置 | |
| JPS63213664A (ja) | イオンプレ−テイング装置 | |
| JPH05230654A (ja) | 合金皮膜のイオンプレーティング方法および装置 | |
| JPS628409A (ja) | 透明電導性金属酸化物膜の形成方法 | |
| JPH03146657A (ja) | 活性化粒子を用いた透明導電膜の形成方法および透明導電膜の形成装置 | |
| JP4408505B2 (ja) | ダイヤモンドライクカーボン膜の形成方法と装置 | |
| JPS5992995A (ja) | 高融点金属シリサイド膜の形成方法 | |
| JPS5920748B2 (ja) | イオン・ビ−ム堆積装置 | |
| JPH09111443A (ja) | 薄膜コーティング方法及び装置 |