JPS6173357A - Semiconductor device - Google Patents

Abstract

PURPOSE:To protect a peripheral electronic part positively by incorporating a fuse element into one part of a conductive path in semiconductor element itself. CONSTITUTION:A bump electrode 3 is formed onto the upper surface of a substrate 1 in a projecting manner under the state in which it is connected to an N region. A wiring 4 as a conductive path connecting an N region and a P region on the outside is shaped onto an insulating layer 2 in the upper surface section of the substrate 1. A fuse section 5 functioning as a fuse element is formed to the intermediate section of the wiring 4 under a fusion-cutting-able state by overcurrents higher than a fixed value. The wiring 4 and the fuse section 5 can be shaped easily by utilizing a semiconductor element manufacturing process. When overcurrents higher than the fixed value flow through the wiring 4, the fuse section 5 is fusion-cut at a time earlier than other sections, and the fuse section 5 can ensure protections to other peripheral electronic parts and peripheral electronic apparatus.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to semiconductor technology, and particularly to technology that is effective when applied to protect semiconductor devices and their peripheral equipment from overcurrent.

[Background technology]

It is conceivable to take some kind of protective measures to prevent semiconductor elements and various peripheral devices using the same from being destroyed by overcurrent flowing therein.

Therefore, it is conceivable to use electronic components exclusively for 7A. For example, Japanese Unexamined Patent Publication No. 100630/1983 proposes a phase in which a 7A element is formed on a low resistance substrate.

However, this type of phase is itself dedicated for fuse purposes, and must be installed separately (this results in problems such as an enlarged structure and troublesome work). There is.

Furthermore, in a semiconductor device, there are two failure modes due to overcurrent: a short-circuit state and an open state. Two conditions, short circuit and topun due to this overcurrent, cannot be predicted.
The inventor has discovered that there is a problem in that protection for peripheral electronic components is uncertain because it cannot be guaranteed that an open state will occur due to overcurrent.

[Purpose of the invention]

Another object of the present invention is to provide a semiconductor technology that can reliably enter an open state due to overcurrent and protect peripheral electronic components. The purpose of the present invention is to provide a semiconductor technology having an element.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

That is, by incorporating a Who's element into a part of the conductive path of the semiconductor element itself, the Who's element is reliably brought into an open state when an overcurrent occurs, thereby making it possible to reliably protect peripheral electronic components.

〔Example]〕

FIGS. 1(a) and 1(b) are a plan view and a sectional view, respectively, of a semiconductor device according to an embodiment of the present invention.

The semiconductor element in this embodiment has a so-called double heat sink diode (DHD diode) structure.

That is, this semiconductor element S for a DHD type diode has a substrate 1 made of silicon (Si) or the like, and this substrate 1 is made of N
, P, and H regions are formed.

On the substrate 1, an insulating layer 2 made of, for example, Sin is formed by semiconductor manufacturing process technology using, for example, the CVD method.

Further, on the upper surface of the substantially central portion of the substrate 1, for example, silver (AJ
') A bump electrode 3 made of a material is protruded and connected to the central N region.

Further, on the upper surface of the substrate 1, a wiring 4 as a conductive path connecting the outer N region and the P region is formed on the P2 edge layer 2 by vapor deposition of aluminum, for example.

A whoosh portion 5 that functions as a phase element is formed in the middle of this wiring 4 so that it can be blown out by an overcurrent of a predetermined value or more.

The wiring 4 and the foosing portion 5 can both be easily formed by β evaporation or the like by utilizing a semiconductor element manufacturing process.

That is, although the fuse portion 5 of this embodiment is formed at the same time as the wiring 4, it is formed with a narrower line width than other portions as shown in FIG. 1(a).

Therefore, when an overcurrent of more than a predetermined value flows through the wiring 4, the fuse section 5 has a smaller current capacity than other sections, so the fuse section 5 will be blown out earlier than the other sections. The fuse section 5 can function as a phase element that can reliably protect other peripheral electronic components and equipment.

Incidentally, an embodiment in which a DHD type diode as an example of a semiconductor device is constructed using the semiconductor elements shown in FIGS. 1(a) and 1(b) is shown in FIG. In this embodiment, the semiconductor element S is sandwiched and sealed in the glass tube 6 between two glue-less type surface mounting electrodes 7.7.

Embodiment 2] FIGS. 2(a) and 2(b) are a plan view and a sectional view, respectively, of a semiconductor element in another embodiment of the present invention.

The semiconductor element S of this embodiment is, for example, a resin mold type σ
) used in a diode, and a part of the wiring 4 connected to the P region at the upper center of the substrate 1 has a thinner used part 5 than the other part, which is formed by a semiconductor element manufacturing process such as Aa vapor deposition. It is formed using technology.

Therefore, in this embodiment as well, when an overcurrent flows through the wiring 4, since the fuse portion 5 has a smaller current capacity than other portions, the fuse portion 5 is blown out earlier than the other portions, and the fuse portion 5 is blown out earlier than the other portions. able to perform a function.

[Embodiment 3] FIGS. 3(a) and Φ) are a plan view and a sectional view, respectively, of a semiconductor element in still another embodiment of the present invention.

The semiconductor element S of this embodiment is used in a semiconductor device such as a bipolar transistor.

In this semiconductor element S as well, a wiring 4 is formed on the substrate, and a whoosh portion 5, which is narrower than other parts, is provided in the middle of the wiring 4 to function as a fuse.

[Embodiment 4] FIG. 4 is a partial cross-sectional view of a semiconductor device according to another embodiment of the present invention.

The semiconductor element S of this embodiment is for, for example, a TTL circuit, and the semiconductor element S is for a TTL circuit, and a
A narrow fuse portion 5 is formed in a part of the wiring 4 connected to the power region 8.

This fuse portion 5 also functions as a fuse by being blown by overcurrent.

〔effect〕

(1) By incorporating a Who's element into a part of the conductive path of the semiconductor element itself, the Who's element is blown out when an overcurrent occurs, so peripheral electronic components, electronic equipment, etc. can be reliably protected.

(2) By forming the fuse element using a semiconductor element manufacturing process, the fuse element can be easily formed.

(3) According to (1) and (21) above, a semiconductor element having a fuse function can be provided at low cost.

(4) According to (1) and (21) above, it is possible to eliminate the need for phase-dedicated elements and their connections.

Although the invention made by the present inventor has been specifically explained based on Examples above, the present invention is not limited to the above-mentioned Examples, and various changes can be made without departing from the gist of the invention. It's no good.

For example, it is possible to make the Who's element with a material and thickness different from that of the wiring portion.

C Field of Application] The above explanation has mainly focused on the case where the invention made by the present inventor is applied to the field of application which is the background of the invention, such as DHD type diodes, but is not limited thereto; for example, bipolar Alternatively, it can be widely applied to MOS type ICs.

[Brief explanation of drawings]

FIGS. 1(a) and (b) are respectively a plan view and a sectional view of a semiconductor device according to one embodiment of the present invention, and FIGS. 2(a) and (b) are respectively a semiconductor device according to another embodiment of the present invention. FIGS. 3(a) and 3(b) are a plan view and a sectional view of a semiconductor element according to still another embodiment of the present invention, and FIG. 4 is a diagram showing a semiconductor device according to still another embodiment of the present invention. Cross-sectional view FIG. 5 is a cross-sectional view showing a DHD type diode which is an embodiment of the semiconductor device of the present invention constructed using the semiconductor element shown in FIG. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Insulating layer, 3... Bump electrode,
4... Wiring (conductive path), 5... Fuse part (fuse element), 6... Glass tube, 7... Electrode, 8...
・Conductive area. Figure 1 (immediately

Claims (1)

[Scope of Claims] 1. A semiconductor device characterized by incorporating a fuse element into a part of the conductive path of the semiconductor element itself. 2. The semiconductor device according to claim 1, wherein the fuse element is formed by a semiconductor element manufacturing process.