JPS6172678U - - Google Patents
Info
- Publication number
- JPS6172678U JPS6172678U JP15722684U JP15722684U JPS6172678U JP S6172678 U JPS6172678 U JP S6172678U JP 15722684 U JP15722684 U JP 15722684U JP 15722684 U JP15722684 U JP 15722684U JP S6172678 U JPS6172678 U JP S6172678U
- Authority
- JP
- Japan
- Prior art keywords
- cantilever beam
- detecting
- diffused resistor
- semiconductor
- reflowing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
Description
第１図は本考案の一実施例の平面図及び断面図
、第２図は従来装置の斜視図及び断面図、第３図
及び第４図はそれぞれ本考案の製造工程図である
。 符号の説明、１１…片持ばり、１２…蒸着膜、
１３…はんだ、１４…拡散抵抗、１５…Ｓｉ基板
、１６…空隙、１７…ＳｉＯ２膜、１８…保護膜
。
、第２図は従来装置の斜視図及び断面図、第３図
及び第４図はそれぞれ本考案の製造工程図である
。 符号の説明、１１…片持ばり、１２…蒸着膜、
１３…はんだ、１４…拡散抵抗、１５…Ｓｉ基板
、１６…空隙、１７…ＳｉＯ２膜、１８…保護膜
。
Claims (1)
- 半導体基板上に形成され、一端を支持された片
持ばりの支持部付近に拡散抵抗を形成し、上記片
持ばりの偏位に応じて上記拡散抵抗に生じる疫抗
値の変化を検出することによつて加速度を検出す
る半導体加速度センサにおいて、上記片持ばりの
先端部に所定の重量を有するソルダボールをリフ
ローすることによつて金属おもりを形成したこと
を特徴とする半導体加速度センサ。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15722684U JPH0320781Y2 (ja) | 1984-10-19 | 1984-10-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15722684U JPH0320781Y2 (ja) | 1984-10-19 | 1984-10-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6172678U true JPS6172678U (ja) | 1986-05-17 |
| JPH0320781Y2 JPH0320781Y2 (ja) | 1991-05-07 |
Family
ID=30715224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15722684U Expired JPH0320781Y2 (ja) | 1984-10-19 | 1984-10-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0320781Y2 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02107911A (ja) * | 1988-10-15 | 1990-04-19 | Fujikura Ltd | 傾斜監視システム |
| JPH02107913A (ja) * | 1988-10-15 | 1990-04-19 | Fujikura Ltd | 傾斜角発信器 |
-
1984
- 1984-10-19 JP JP15722684U patent/JPH0320781Y2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02107911A (ja) * | 1988-10-15 | 1990-04-19 | Fujikura Ltd | 傾斜監視システム |
| JPH02107913A (ja) * | 1988-10-15 | 1990-04-19 | Fujikura Ltd | 傾斜角発信器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0320781Y2 (ja) | 1991-05-07 |