JPS6172206A - Substrate type waveguide and its production - Google Patents
Substrate type waveguide and its productionInfo
- Publication number
- JPS6172206A JPS6172206A JP19432684A JP19432684A JPS6172206A JP S6172206 A JPS6172206 A JP S6172206A JP 19432684 A JP19432684 A JP 19432684A JP 19432684 A JP19432684 A JP 19432684A JP S6172206 A JPS6172206 A JP S6172206A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- stress
- core layer
- polarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
(イ)産業上の利用分野
この発明は、基板型導波路およびその製造方法に関する
。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application This invention relates to a substrate type waveguide and a method for manufacturing the same.
(ロ)従来技術
ノ、(仮型導波路は生産性に優れ、また特性も安定して
いる。ところで、従来では、光ファイバの分岐・結合素
子としてはファイバ型導波路が主であり、特に、中−モ
ード光ファイバ用の基板型導波路は皆無である。これは
、単一モード光ファイバ、特に偏波面保存性を持つ単一
モード光ファイバの分岐・結合を行なう素子として偏波
面の保存性を有することまで要求される場合が多いのに
、偏波面保存性を持つ分岐・結合用基板型導波路は実現
が困難であったからである。(b) Prior art (Temporary waveguides have excellent productivity and stable characteristics. By the way, conventionally, fiber waveguides have been the main branching and coupling elements for optical fibers, especially , there are no substrate-type waveguides for medium-mode optical fibers.This is an element for splitting and coupling single-mode optical fibers, especially single-mode optical fibers with polarization preserving properties. This is because it has been difficult to realize a branching/coupling substrate-type waveguide with polarization preservation property, even though it is often required to have polarization preservation property.
(ハ)目的
この発明は、偏波面保存性を有する基板型単一モード用
導波路を実現し、および、この導波路を容易に製造でき
る製造方法を提供することを目的とする。(C) Objective The object of the present invention is to realize a substrate-type single-mode waveguide having polarization preservation properties and to provide a manufacturing method that can easily manufacture this waveguide.
(ニ)構成
この発明による基板型導波路は、基板上に、該ス(板表
面に垂直方向に、応力付与層とコア層と応力付与層とが
順次積層されているという構造である。(D) Structure The substrate-type waveguide according to the present invention has a structure in which a stress applying layer, a core layer, and a stress applying layer are sequentially laminated on a substrate in a direction perpendicular to the surface of the substrate.
また、この発明による基板型導波路の製造方法は、)、
(板上に、応力付与層とコア層と応力付与層とを順次連
続して気相から析出させる気相堆積工程と、該基板上に
形成されたこれら応力付与層とコア層と応力付与層とを
導波路パターンにしたがってエツチングするエツチング
工程とからなる。Furthermore, the method for manufacturing a substrate type waveguide according to the present invention is as follows:
(A vapor phase deposition step in which a stress imparting layer, a core layer, and a stress imparting layer are successively deposited from a vapor phase on a board, and a stress imparting layer, a core layer, and a stress imparting layer formed on the substrate. and an etching step of etching the waveguide pattern according to the waveguide pattern.
(ホ)実施例
この発明による基板型導波路は、第1図に示すように、
石英あるいはシリコンの基板lの上に、この基板Iの表
面に垂直な方向に、応力付与層2と、コア層3と、応力
付与層4とが順次積層されてなる。そして基板lの両端
にはそれぞれ2条ずつV溝11が形成されていて、この
V溝のそれぞれに定偏波単一モード光ファイバ12が配
置されるようになっている。2つの応力付与層2.4に
よりコア層3に対して基板面に垂直な方向に応力が付与
され、コア層3を伝搬する光信号の軸方向の伝搬定数に
相違が生じて偏波面が保存される。(E) Example The substrate type waveguide according to the present invention is as shown in FIG.
A stress applying layer 2, a core layer 3, and a stress applying layer 4 are sequentially laminated on a quartz or silicon substrate I in a direction perpendicular to the surface of the substrate I. Two V-grooves 11 are formed at each end of the substrate 1, and a constant polarization single mode optical fiber 12 is disposed in each of the V-grooves. The two stress applying layers 2.4 apply stress to the core layer 3 in a direction perpendicular to the substrate surface, causing a difference in the propagation constant in the axial direction of the optical signal propagating through the core layer 3, thereby preserving the plane of polarization. be done.
こうして、定偏波単一モード光ファイバ用の、偏波面保
存性を持つ分岐・結合素子が構成される。In this way, a polarization-preserving branching/coupling element for a polarization-constant single-mode optical fiber is constructed.
なお、第1図では省略しているが、応力付与層2、コア
層3、応力付与層4を覆って保護するSin、薄膜の保
護層(第3図Gの5参照)が設けられている。Although omitted in FIG. 1, a thin film protective layer (see 5 in FIG. 3 G) is provided to cover and protect the stress applying layer 2, core layer 3, and stress applying layer 4. .
これらの応力付与層2.4、コア層3は、CVD法(化
学気相堆積法)により基板1上に材質の異なるガラス膜
を連続的に3層形成し、このカラス11り形成−L程が
終了した後、エンチングを行なって導波路パターンを形
成することによって作られる。このような方法で製造さ
れることにより、製造工程が簡略化でき、しかも応力付
与層2.4とコア層3との界面状態を良好に保つことが
できる。These stress-applying layers 2.4 and core layer 3 are formed by successively forming three layers of glass films of different materials on the substrate 1 using the CVD method (chemical vapor deposition method). After that, etching is performed to form a waveguide pattern. By manufacturing by such a method, the manufacturing process can be simplified, and the interface state between the stress applying layer 2.4 and the core layer 3 can be maintained in a good condition.
具体的には、たとえば第2図に示すようなCVD装置6
を用いる。このCVD装置6は反応容器61とその周囲
に配置された加熱装置62とからなり、反応容器61に
は原料ガスの供給口63と排気口64とが設けられてい
る。基板1はこの反応容器61内で保持具65により保
持される。Specifically, for example, a CVD apparatus 6 as shown in FIG.
Use. This CVD apparatus 6 consists of a reaction vessel 61 and a heating device 62 arranged around the reaction vessel 61, and the reaction vessel 61 is provided with a source gas supply port 63 and an exhaust port 64. The substrate 1 is held within this reaction vessel 61 by a holder 65 .
この実施例では基板1として熱酸化膜付シリコンウェハ
を用い、まず原料ガスとして5fC1*; 60cc
/win、GeCl 4 ; 2cc/win、B
B r x; 12 cc/+*inを02 ; 20
00cc/minとともに、1400°Cに加熱された
反応容器61内に送り込み、第3図Aに示すように、基
板1の上に応力付与層?であるS i 02− B 2
0 x −G e 02 ’系ガラス層を2gm/wi
nで成長させた。この5iOzB 20 m −G e
02系ガラス層は、Sin、;90%、 B v O
3; 2%、Ge0y ; 8%の組成で屈折率は1.
4585である。In this example, a silicon wafer with a thermal oxide film is used as the substrate 1, and 5fC1*; 60cc is first used as the raw material gas.
/win, GeCl 4 ; 2cc/win, B
B r x; 12 cc/+*in 02; 20
00cc/min into a reaction vessel 61 heated to 1400°C, and as shown in FIG. 3A, a stress-applying layer ? S i 02- B 2
0 x -G e 02' glass layer at 2gm/wi
grown at n. This 5iOzB 20 m -G e
The 02 series glass layer is Sin,; 90%, B v O
The refractive index is 1.3 with a composition of 2% and GeOy of 8%.
It is 4585.
この応力付与層2が18pmの厚さにまで成長したとき
以降、5fCI4 ;60cc7min、GeCI 4
; 12cc/win、 Oa ; 2000cc/
lll1n、温度を1450℃として、Sin、−Ge
−0,系ガラス層のコア層3を、第3図Bに示すように
、上記の応力付与層2に連続して9層mの厚さにまで成
長させる。このS io、−Ge−02系ガラス層は、
S i O2; 87%、’ G e Ox ; l
3%のM1成で屈折率は1.464であった。After this stress applying layer 2 has grown to a thickness of 18 pm, 5fCI4; 60cc7min, GeCI4
; 12cc/win, Oa; 2000cc/
lll1n, temperature 1450℃, Sin, -Ge
A core layer 3 of the -0, glass layer is grown to a thickness of 9 layers m in succession to the stress-applying layer 2, as shown in FIG. 3B. This S io, -Ge-02 glass layer is
S i O2; 87%, ' G e Ox ; l
The refractive index was 1.464 with M1 content of 3%.
次いで、第3図Cに示すように、上記と同様のS 10
a −B 201 Q eo i系ガラス層からな
る応力伺′j一層4を、上記と同様の条件で厚さ18g
mに形成した。Then, as shown in FIG. 3C, S 10 similar to the above is performed.
a - B 201 Q eo One layer 4 made of i-based glass was heated to a thickness of 18 g under the same conditions as above.
It was formed into m.
これらの3層のCVD法によるガラス膜2.3.4は3
層連続的に成長させられ、これが終了した後、第3図り
のようにフォトレジスト71の塗布を行ない、次にUV
露光して導波路パターンにしたがって窓72を形成する
。この窓72の部分に、スパッタ法により、マスク層7
3として金属チタンを付着させた後フォトレジスト71
を除去する(第3図E参照)0次にエツチングガスとし
てCF 4を用い1導波路パターン以外のガラス1戻2
.3,4をRIE (リアクティブ・イオン争エツチン
グ)により取り去る(第3図F参照)。Glass film 2.3.4 of these three layers by CVD method is 3
After the layers are grown successively, a photoresist 71 is applied as shown in the third diagram, and then UV
A window 72 is formed according to the waveguide pattern by exposure. A mask layer 7 is formed on this window 72 by sputtering.
Photoresist 71 after depositing metallic titanium as 3.
(See Figure 3E) 1. Glass other than the waveguide pattern 1 Return 2 using CF4 as etching gas
.. 3 and 4 are removed by RIE (reactive ion competition etching) (see Figure 3F).
次に第3図Gに示すように、これらの上を覆うようにし
て、有機金属化合物、この実施例では5t(OC2H4
)の分解により保護層5としてtpmのJブさのS i
oz層を設けた。+シてシリコンノ1(板1のtj4端
には異方性エツチングにより光ファイバ12の固定用の
■溝11を第1図に示すように設ける。なお、実施例に
おける各部の寸法は第1図に書き込まれている通りであ
る。Next, as shown in FIG. 3G, an organometallic compound, in this example 5t (OC2H4
) is decomposed to form the protective layer 5 with tpm of J-blind Si.
oz layer was provided. +Silicon groove 11 for fixing the optical fiber 12 is provided at the tj4 end of the plate 1 by anisotropic etching as shown in FIG. It is as written in the figure.
(へ)効果
この発明によれば、生産性に優れ且つ特性も安定した、
偏波面保存性を有する基板型単一モード用導波路が得ら
れる。また、この発明による製造方法によれば、上記の
基板型単一モード用導波路を容易に製造できる。(f) Effects According to this invention, the productivity is excellent and the characteristics are stable.
A substrate-type single mode waveguide having polarization preservation property is obtained. Further, according to the manufacturing method according to the present invention, the above substrate type single mode waveguide can be easily manufactured.
第1図はこの発明の一実施例の模式的な斜視図、第2図
はCVD装置の模式図、第3図A−Gは製造工程の各々
における断面図である。
l・・・基板 2,4・・・応力付与層3
・・・コア層 5・・・保護層6・・・CV
D装置FIG. 1 is a schematic perspective view of an embodiment of the present invention, FIG. 2 is a schematic diagram of a CVD apparatus, and FIGS. 3A to 3G are cross-sectional views of each manufacturing process. l... Substrate 2, 4... Stress applying layer 3
...Core layer 5...Protective layer 6...CV
D device
Claims (2)
とコア層と応力付与層とが順次積層されてなる基板型導
波路。(1) A substrate-type waveguide in which a stress-applying layer, a core layer, and a stress-applying layer are sequentially laminated on a substrate in a direction perpendicular to the surface of the substrate.
順次連続して気相から析出させる気相堆積工程と、該基
板上に形成されたこれら応力付与層とコア層と応力付与
層とを導波路パターンにしたがってエッチングするエッ
チング工程とからなる基板型導波路の製造方法。(2) A vapor phase deposition step in which a stress imparting layer, a core layer, and a stress imparting layer are successively deposited from a vapor phase on a substrate, and the stress imparting layer, core layer, and stress imparting layer formed on the substrate are A method for manufacturing a substrate-type waveguide, comprising an etching step of etching a provision layer according to a waveguide pattern.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59194326A JPH0664213B2 (en) | 1984-09-17 | 1984-09-17 | Optical splitter / coupler |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59194326A JPH0664213B2 (en) | 1984-09-17 | 1984-09-17 | Optical splitter / coupler |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22835293A Division JPH0820573B2 (en) | 1993-08-20 | 1993-08-20 | Optical branching / combining method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6172206A true JPS6172206A (en) | 1986-04-14 |
JPH0664213B2 JPH0664213B2 (en) | 1994-08-22 |
Family
ID=16322726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59194326A Expired - Fee Related JPH0664213B2 (en) | 1984-09-17 | 1984-09-17 | Optical splitter / coupler |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0664213B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2612301A1 (en) * | 1987-03-12 | 1988-09-16 | Corning Glass Works | INTEGRATED OPTICAL COMPONENT AND MANUFACTURE THEREOF |
US4979970A (en) * | 1989-02-11 | 1990-12-25 | Corning Incorporated | Method of manufacturing integrated optical component |
JP2007178643A (en) * | 2005-12-27 | 2007-07-12 | Mitsumi Electric Co Ltd | Optical waveguide device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS552263A (en) * | 1978-06-20 | 1980-01-09 | Nippon Telegr & Teleph Corp <Ntt> | Production of optical guide circuits |
JPS5598708A (en) * | 1979-01-22 | 1980-07-28 | Oki Electric Ind Co Ltd | Production of light plane circuit |
JPS57114111A (en) * | 1981-01-08 | 1982-07-15 | Nippon Telegr & Teleph Corp <Ntt> | Optical polarized branching filter |
-
1984
- 1984-09-17 JP JP59194326A patent/JPH0664213B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS552263A (en) * | 1978-06-20 | 1980-01-09 | Nippon Telegr & Teleph Corp <Ntt> | Production of optical guide circuits |
JPS5598708A (en) * | 1979-01-22 | 1980-07-28 | Oki Electric Ind Co Ltd | Production of light plane circuit |
JPS57114111A (en) * | 1981-01-08 | 1982-07-15 | Nippon Telegr & Teleph Corp <Ntt> | Optical polarized branching filter |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2612301A1 (en) * | 1987-03-12 | 1988-09-16 | Corning Glass Works | INTEGRATED OPTICAL COMPONENT AND MANUFACTURE THEREOF |
US4943130A (en) * | 1987-03-12 | 1990-07-24 | Dannoux Thierry L | Integrated optical component |
US4979970A (en) * | 1989-02-11 | 1990-12-25 | Corning Incorporated | Method of manufacturing integrated optical component |
JP2007178643A (en) * | 2005-12-27 | 2007-07-12 | Mitsumi Electric Co Ltd | Optical waveguide device |
Also Published As
Publication number | Publication date |
---|---|
JPH0664213B2 (en) | 1994-08-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |